Rational design and crystal structure prediction of ring-fused double-PDI compounds as n-channel organic semiconductors: a DFT study

DFT Guided Design and Preparation of Quasi-Nanocrystalline Hf-La2O3 Cathode with Unprecedented Thermal Emission Performance

With the guidance of density functional theory (DFT), a high-performance hafnium (Hf) cathode for an air/water vapor plasma torch is designed and the concepts and principles for high performance are elucidated. A quasi-nanocrystalline hexagonal close-packed (HCP) Hf-La2O3 cathode based on these design principles is successfully fabricated via a powder metallurgy route. Under identical voltage and temperature conditions, the thermal emission current density of this quasi-nanocrystalline Hf-La2O3 cathode is ≈20 times greater than that of conventional Hf cathodes. Additionally, its cathodic lifespan is significantly extended. Quasi-nanocrystalline Hf-La2O3 products are manufactured into cathode devices with standard dimensions. This fabrication process is straightforward, requires minimal doped oxides, and is cost-effective. Consequently, the approach offers substantial performance enhancements over traditional Hf melting methods without incurring significantly additional costs.

Investigating the potential of organic semiconductor materials by DFT and TD-DFT calculations on aNDTs

The effects of substituting electron withdrawing and electron donating functional groups on the electronic and optical properties of angular naphthodithiophene (aNDT) were studied. Substitutions were made to the aNDT molecule at position 2 and 7, respectively. The computed ionization parameters and reorganisation energies distinguished between the p-type and n-type semiconducting natures of the unsubstituted aNDT molecule and those with the -C₂H₅, -OCH₃, -NO₂, and -CN substituents. However, the aNDT molecule with C₂H₅ as a substitution showed p-type behaviour since it had the largest electron reorganisation energy of about 0.37 eV. The ambipolar semiconducting property of methoxy [-OCH₃-] substituted aNDT molecule was revealed from the RMSD value of 0.03 Å for both positive and negative charges with respect to neutral geometry. The absorption spectra differ significantly from those of unsubstituted aNDT, which reveals the impact of functional group substitution that changes the energy level of the molecules. The maximum absorption (λ_max) and oscillator strength (f) at the excited states in vacuum was investigated using time dependent density functional theory (TD-DFT). The aNDT with electron withdrawing group [-NO₂] substitution has a maximum absorption wavelength of 408 nm. Studying the intermolecular interactions between aNDT molecules was also accomplished with the help of Hirshfeld surface analysis. The current work provides insight into the development of novel organic semiconductors.

Computational Design of Crescent Shaped Promising Nonfullerene Acceptors with 1,4-Dihydro-2,3-quinoxalinedione Core and Different Electron-withdrawing Terminal Units for Photovoltaic Applications

This study aims to design a series of nonfullerene acceptors (NFAs) for photovoltaic applications having 1,4-dihydro-2,3-quinoxalinedione fused thiophene derivative as the core unit and 1,1-dicyanomethylene-3-indanone (IC) derivatives and different π-conjugated molecules other than IC as terminal acceptor units. All the investigated NFAs are found air-stable as the computed highest occupied molecular orbitals (HOMOs) are below the air oxidation threshold (ca. -5.27 eV vs saturated calomel electrode). The studied NFAs can act as potential nonfullerene acceptor candidates as they are found to have sufficient open-circuit voltage (V_oc) and fill factor (FF) ranging from 0.62 to 1.41 V and 83%-91%, respectively. From the anisotropic mobility analysis, it is noticed that the studied NFAs except dicyano-rhodanine terminal unit containing NFA, exhibit better electron mobility than the hole mobility, and therefore, they can be more promising electron transporting acceptor materials in the active layer of an organic photovoltaic cell. From the optical absorption analysis, it is noted that all the designed NFAs have the maximum absorption spectra ranging from 597 nm-730 nm, which lies in the visible region and near-infrared (IR) region of the solar spectrum. The computed light-harvesting efficiencies for the PM6 (thiophene derivative donor selected in our study):NFA blends are found to lie in the range of 0.96-0.99, which indicates efficient light-harvesting by the PM6:NFA blends during photovoltaic device operation.

Computational study of electron transport in halogen incorporated diindenotetracene compounds: crystal structure, charge transport and optoelectronic properties

The crystal structure, charge transport and optoelectronic properties of newly designed air-stable halogenated diindenotetracene (DIT) based OSCs are reported in this article. The structural, electronic and charge transport properties of the compounds are investigated using density functional theory (DFT) formalism. The air-stability and n-type characteristics are validated from their low lying LUMO energies (<-3.9 eV) and large electron affinity (EA) values (>3.0 eV). Compared with the parent DIT, the designed DIT-X compounds (except for DIT-I) exhibit larger electronic coupling (V^e is found to be ∼1.5 times larger than that of the bare DIT) and higher electron mobilities because of the effect of electron-withdrawing groups substituted at the peripheral positions of the DIT derivatives. The designed DIT-X compounds (except DIT-I) show high electron mobilities (∼2.4-5.4 cm² V^-1 s^-1), implying that the compounds can serve as promising electron transport materials. In addition, the UV-visible optical spectra of DIT derivatives (except DIT-F) display bathochromic shifts as compared to the bare DIT compound.