Strain-mediated bandgap engineering of straight and bent semiconductor nanowires

Behavior of Microstrain in Nd3+-Sensitized Near-Infrared Upconverting Core-Shell Nanocrystals for Defect-Induced Tailoring of Luminescence Intensity

In an attempt to optimize the upconversion luminescence (UCL) output of a Nd3+-sensitized near-infrared (808 nm) upconverting core-shell (CS) nanocrystal through deliberate incorporation of lattice defects, a comprehensive analysis of microstrain both at the CS interface and within the core layer was performed using integral breadth calculation of high-energy synchrotron X-ray (λ = 0.568551 Å) diffraction. An atomic level interpretation of such microstrain was performed using pair distribution function analysis of the high-energy total scattering. The core NC developed compressive microstrain, which gradually transformed into tensile microstrain with the growth of the epitaxial shell. Such a reversal was rationalized in terms of a consistent negative lattice mismatch. Upon introduction of lattice defects into the CS systems upon incorporation of Li+, the corresponding UCL intensity was maximized at some specific Li+ incorporation, where the tensile microstrain of CS, compressive microstrain of the core, and atomic level disorders exhibited their respective extreme values irrespective of the activator ions.

Exploiting flux shadowing for strain and bending engineering in core-shell nanowires

Here we report on the non-uniform shell growth of In_xGa_1-xAs on the GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with the pitch size (p) ranging from 0.1 μm to 10 μm. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we were able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with a high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a method to design NW based devices with length selective strain distribution.

Ultrafast bandgap narrowing and cohesion loss of photoexcited fused silica

Coupling and spatial localization of energy on ultrafast timescales and particularly on the timescale of the excitation pulse in ultrashort laser irradiated dielectric materials are key elements for enabling processing precision beyond the optical limit. Transforming matter on mesoscopic scales facilitates the definition of nanoscale photonic functions in optical glasses. On these timescales, quantum interactions induced by charge non-equilibrium become the main channel for energy uptake and transfer as well as for the material structural change. We apply a first-principles model to determine dynamic distortions of energy bands following the rapid increase in the free-carrier population in an amorphous dielectric excited by an ultrashort laser pulse. Fused silica glass is reproduced using a system of (SiO₄)^4- tetrahedra, where density functional theory extended to finite-temperature fractional occupation reproduces ground and photoexcited states. Triggered by electronic charge redistribution, a bandgap narrowing of more than 2 eV is shown to occur in fused silica under geometry relaxation. Calculations reveal that the bandgap decrease results from the rearrangement of atoms altering the bonding strength. Despite an atomic movement impacting strongly the structural stability, the observed change of geometry remains limited to 7% of the interatomic distance and occurs on the femtosecond timescale. This structural relaxation is thus expected to take place quasi-instantly following the photon energy flux. Moreover, under intense laser pulse excitation, fused silica loses its stability when an electron temperature of around 2.8 eV is reached. A further increase in the excitation energy leads to the collapse of both the structure and bandgap.

In situx-ray analysis of misfit strain and curvature of bent polytypic GaAs-InxGa1-xAs core-shell nanowires

Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the bending of GaAs nanowires during the asymmetric overgrowth by an In_xGa_1-xAs shell caused by avoiding substrate rotation. We observe that the nanowire bending direction depends on the nature of the substrate's oxide layer, demonstrated by Si substrates covered by native and thermal oxide layers. Further, we follow the bending evolution by time-resolvedin situx-ray diffraction measurements during the deposition of the asymmetric shell. The XRD measurements give insight into the temporal development of the strain as well as the bending evolution in the core-shell nanowire.