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For: Yu Y, Zhou Z, Xu L, Ding Y, Fang G. Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide. Phys Chem Chem Phys 2021;23:9594-9603. [PMID: 33885104 DOI: 10.1039/d1cp00864a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Number Cited by Other Article(s)
1
Park YJ, So HS, Hwang H, Jeong DS, Lee HJ, Lim J, Kim CG, Shin HS. Synthesis of 1T WSe2 on an Oxygen-Containing Substrate Using a Single Precursor. ACS NANO 2022;16:11059-11065. [PMID: 35776412 DOI: 10.1021/acsnano.2c03762] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
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