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Kumar N, Nezhdanov AV, Smertin RM, Polkovnikov VN, Chkhalo NI, Golyashov VA, Tereshchenko OE. A volume plasmon blueshift in thin silicon films embedded within Be/Si periodic multilayer mirrors. Phys Chem Chem Phys 2022; 24:15951-15957. [PMID: 35730555 DOI: 10.1039/d2cp01697d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Microstructural properties of the beryllium (Be) and silicon (Si) in periodic multilayer mirrors Be/Si with the variation of film thickness were comprehensively determined by Raman scattering. For the thinner films, the structure of Be evolved in the amorphous phase, and it was transformed into the polycrystalline phase for thicker films. The Si films in the periodic structure were condensed into the amorphous phase. The small fraction of nanocrystalline Si particles was distributed within the amorphous phase. A shake-up satellite peak of Si 2s photoelectrons was observed in X-ray photoelectron spectroscopy which suggested the excitation of a plasmon in Si films embedded within Be/Si periodic multilayers. The energy of plasmons was sensitive to the film thickness of Si in the periods which directly corresponds to the particle size. The binding energy of the satellite peak of Si 2s photoelectrons was blueshifted (higher energy) with a decrease in the particle size. This was explained by size dependent quantum confinement of particles.
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Affiliation(s)
- Niranjan Kumar
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Aleksey V Nezhdanov
- Laboratory of Functional Nanomaterials, Lobachevsky State University, Nizhny Novgorod 603950, Russia
| | - Rushlan M Smertin
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | | | - Nikolay I Chkhalo
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
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