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Bhattarai R, Minch P, Liang Y, Zhang S, Rhone TD. Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2Te 2. Phys Chem Chem Phys 2024; 26:10111-10119. [PMID: 38483272 DOI: 10.1039/d3cp05578g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
We investigate a strain-induced topological phase transition in the ferromagnetic Janus monolayer MnSbBiS2Te2 using first-principles calculations. The electronic, magnetic, and topological properties are studied under biaxial strain within the range of -8 to +8%. The ground state of monolayer MnSbBiS2Te2 is metallic with an out-of-plane magnetic easy axis. A band gap is opened when a compressive strain between -4% and -7% is applied. We observe a topological phase transition at a biaxial strain of -5%, where the material becomes a Chern insulator exhibiting a quantum anomalous hall (QAH) effect. We find that biaxial strain and spin-orbit coupling (SOC) are responsible for the topological phase transition in MnSbBiS2Te2. In addition, we find that biaxial strain can alter the direction of the magnetic easy axis of MnSbBiS2Te2. The Curie temperature is calculated using the Heisenberg model and is found to be 24 K. This study could pave the way to the design of topological materials with potential applications in spintronics, quantum computing, and dissipationless electronics.
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Affiliation(s)
- Romakanta Bhattarai
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
| | - Peter Minch
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
| | - Yunfan Liang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
| | - Shengbai Zhang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
| | - Trevor David Rhone
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
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Oreshonkov AS, Sukhanova EV, Popov ZI. Phonon dynamics in MoSi 2N 4: insights from DFT calculations. Phys Chem Chem Phys 2023; 25:29831-29841. [PMID: 37888343 DOI: 10.1039/d3cp02921b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
We have reported the density functional theory investigations on the monolayered, 2 layered and bulk MoSi2N4 in three structural modifications called α1 [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023], α2 and α3 [Y. Yin, Q. Gong, M. Yi and W. Guo, Emerging Versatile Two-Dimensional MoSi2N4 Family, Adv. Funct. Mater., 2023, 2214050, DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayered, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that the Raman line at 348 cm-1 in the experimental spectra of MoSi2N4 can have more complex explanation than just Γ-point Raman-active vibration as was discussed before in [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023].
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Affiliation(s)
- A S Oreshonkov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia.
- School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - E V Sukhanova
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, 141700, Russia
| | - Z I Popov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
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Jiang J, Mi W. Two-dimensional magnetic Janus monolayers and their van der Waals heterostructures: a review on recent progress. MATERIALS HORIZONS 2023; 10:788-807. [PMID: 36594899 DOI: 10.1039/d2mh01362b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A magnetic Janus monolayer, a special type of material which has asymmetric arrangements of its surface at the nanoscale, has been shown to present rather exotic properties for applications in spintronics and its intersections. This review aims to offer a comprehensive review of the emergent physical properties of magnetic Janus monolayers and their van der Waals heterostructures from a theoretical point of view. The review starts by introducing the theoretical methodologies composed of the state-of-the-art methods and the challenges and limitations in validations for the descriptions of the magnetic ground states and thermodynamic properties in magnetic materials. The built-in polarization field induced physical phenomena of magnetic Janus monolayers are then presented. The tunable electronic and magnetic properties of magnetic Janus monolayer-based van der Waals heterostructures are discussed. Finally, the conclusions and future challenges in this field are prospected. This review serves as a complete summary of the two-dimensional magnetic Janus library and emergent electronic and magnetic properties in magnetic Janus monolayers and their heterostructures, and provides guidelines for the design of electronic and spintronic devices based on Janus materials.
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Affiliation(s)
- Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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Song G, Zhang C, Zhang Z, Li G, Li Z, Du J, Zhang B, Huang X, Gao B. Coexistence of intrinsic room-temperature ferromagnetism and piezoelectricity in monolayer BiCrX 3 (X = S, Se, and Te). Phys Chem Chem Phys 2022; 24:1091-1098. [PMID: 34927655 DOI: 10.1039/d1cp04900c] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials with intrinsic ferromagnetism and piezoelectricity have received growing attention due to their potential applications in nanoscale spintronic devices. However, their applications are highly limited by the low Curie temperatures (TC) and small piezoelectric coefficients. Here, using first-principles calculations, we have successfully predicted that BiCrX3 (X = S, Se, and Te) monolayers simultaneously possess ferromagnetism and piezoelectricity by replacing one layer of Bi atoms with Cr atoms in Bi2X3 monolayers. Our results demonstrate that BiCrX3 monolayers are not only intrinsic ferromagnetic semiconductors with indirect band gaps, adequate TC values of higher than 300 K, and significant out-of-plane magnetic anisotropic energies, but also exhibit appreciable in-plane and out-of-plane piezoelectricity. In particular, the in-plane piezoelectric coefficients of BiCrX3 monolayers with ABCAB configuration are up to 15.16 pm V-1, which is higher than those of traditional three-dimensional piezoelectric materials such as α-quartz. The coexistence of ferromagnetism and piezoelectricity in BiCrX3 monolayers gives them promising applications in spintronics and nano-sized sensors.
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Affiliation(s)
- Guang Song
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Chengfeng Zhang
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Zhengzhong Zhang
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Guannan Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Zhongwen Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Juan Du
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Bingwen Zhang
- Fujian Key Laboratory of Functional Marine Sensing Materials, Minjiang University, Fuzhou 350108, China
| | - Xiaokun Huang
- School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China
| | - Benling Gao
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
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Lien VTK, Van On V, Guerrero-Sanchez J, Rivas-Silva JF, Cocoletzi GH, Hoat DM. Theoretical prediction of alkali oxide M 2O (M = Na and K) monolayers and formation of their Janus structure. NEW J CHEM 2022. [DOI: 10.1039/d2nj03118c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Formation of the Janus structure.
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Affiliation(s)
- Vu Thi Kim Lien
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Vo Van On
- Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J. Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - J. F. Rivas-Silva
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla, 72570, Mexico
| | - Gregorio H. Cocoletzi
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla, 72570, Mexico
| | - D. M. Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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