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Zhang K, Li H, Mu H, Li Y, Wang P, Wang Y, Chen T, Yuan J, Chen W, Yu W, Zhang G, Bao Q, Lin S. Spatially Resolved Light-Induced Ferroelectric Polarization in α-In 2Se 3/Te Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405233. [PMID: 39091054 DOI: 10.1002/adma.202405233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 07/13/2024] [Indexed: 08/04/2024]
Abstract
Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.
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Affiliation(s)
- Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Haozhe Li
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yun Li
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Pu Wang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yu Wang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Tongsheng Chen
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Jian Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiqiang Chen
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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Nahid SM, Nam S, van der Zande AM. Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In 2Se 3/Graphene Heterostructures. ACS NANO 2024; 18:14198-14206. [PMID: 38771928 DOI: 10.1021/acsnano.3c11558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
The ferroelectric photovoltaic effect (FPVE) enables alternate pathways for energy conversion that are not allowed in centrosymmetric materials. Understanding the dominant mechanism of the FPVE at the ultrathin limit is important for defining the ultimate efficiency. In contrast to the wide band gap conventional thin-film ferroelectrics, 2D α-In2Se3 has an ideal band gap of 1.3 eV and enables the fabrication of ultrathin and stable heterostructures, providing the perfect platform to explore FPVE in the nanoscale limit. Here, we study the ferroelectric layer thickness-dependent FPVE in vertical few-layer graphene/α-In2Se3/graphene heterostructures. We find that the short-circuit photocurrent is antiparallel to the ferroelectric polarization and increases exponentially with decreasing thickness. We show that the observed behavior is predicted by the depolarization field model, originating from the unscreened bound charges due to the finite density of states in semimetal few-layer graphene. As a result, the heterostructures show enhancement of the power conversion efficiency, reaching 2.56 × 10-3% under 100 W/cm2 in 18 nm thick α-In2Se3, approximately 275 times more than the 50 nm thick α-In2Se3. These results demonstrate the importance of the depolarization field at the nanoscale and define design principles for the potential of harnessing FPVE at reduced dimension.
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Affiliation(s)
- Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois Urbana─Champaign, Urbana, Illinois 61801, United States
| | - SungWoo Nam
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, Irvine, California 92697, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana─Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
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Wu TH, Cheng HY, Lai WC, Sankar R, Chang CS, Lin KH. Ultrafast carrier dynamics and layer-dependent carrier recombination rate in InSe. NANOSCALE 2023; 15:3169-3176. [PMID: 36651904 DOI: 10.1039/d2nr05498a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
InSe layered semiconductors with high mobility have advantages over transition-metal dichalcogenides in certain device applications. Understanding the dynamics of carriers, especially around the major bandgaps, is not only of fundamental interest but also important for improving the performance of devices. We investigated ultrafast carrier dynamics in exfoliated InSe near the bandgap and found that the presence of photocarriers led to shrinkage in the optical bandgap. In addition, we observed that the carrier recombination rate increased when the thickness of the InSe nanoflakes was reduced and the process was dominated by surface recombination. For the same flakes, the recombination rate became lower after the freshly exfoliated InSe was exposed to air and oxidized. Using a free carrier diffusion model, layer-dependent surface recombination velocities were obtained. Our investigation reveals that the surface condition and the thickness of few-layer InSe play important roles in carrier lifetimes.
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Affiliation(s)
- Ting-Hsuan Wu
- Department of Physics, National Taiwan University, Taipei 106319, Taiwan
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
| | - Hao-Yu Cheng
- Department of Physics, National Taiwan University, Taipei 106319, Taiwan
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115201, Taiwan
| | - Wei-Chiao Lai
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
| | - Chia-Seng Chang
- Department of Physics, National Taiwan University, Taipei 106319, Taiwan
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
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Abstract
The thin-film organic solar cells (OSCs) are currently one of the most promising photovoltaic technologies to effectively harvest the solar energy due to their attractive features of mechanical flexibility, light weight, low-cost manufacturing, and solution-processed large-scale fabrication, etc. However, the relative insufficient light absorption, short exciton diffusion distance, and low carrier mobility of the OSCs determine the power conversion efficiency (PCE) of the devices are relatively lower than their inorganic photovoltaic counterparts. To conquer the challenges, the two-dimensional (2D) nanomaterials, which have excellent photoelectric properties, tunable energy band structure, and solvent compatibility etc., exhibit the great potential to enhance the performance of the OSCs. In this review, we summarize the most recent successful applications of the 2D materials, including graphene, black phosphorus, transition metal dichalcogenides, and g-C3N4, etc., adapted in the charge transporting layer, the active layer, and the electrode of the OSCs, respectively, for boosting the PCE and stability of the devices. The strengths and weaknesses of the 2D materials in the application of OSCs are also reviewed in details. Additionally, the challenges, commercialization potentials, and prospects for the further development of 2D materials-based OSCs are outlined in the end.
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