Two-dimensional layered MSi2N4 (M = Mo, W) as promising thermal management materials: a comparative study

Two-Dimensional MoSi2N4 Family: Progress and Perspectives Form Theory

Recently, a new two-dimensional (2D) layered MoSi2N4 has been successfully synthesized by chemical vapor deposition without knowing the 3D counterparts [ Science 2020, 369, 670-674]. The unique septuple-atomic-layer structure and diverse composition of MoSi2N4 have drawn tremendous interest in studying 2D MA2Z4 systems based on the MoSi2N4 structure. As an emerging family of 2D materials, MA2Z4 materials exhibit a wide range of properties and excellent tunability, making them highly promising for various applications. Herein, we summarize recent significant progress in property characterization of the MA2Z4 family. The electronic, magnetic, thermal transport, and superconducting properties, including their tunability through strain engineering and elemental substitution, are presented and elaborated in detail. Further perspectives and new opportunities of the emerging MA2Z4 family are presented at the end of this Perspective.

Intercalating Architecture for the Design of Charge Density Wave in Metallic MA2Z4 Materials

We present a novel approach to induce charge density waves (CDWs) in metallic MA2Z4 materials, resembling the behavior observed in transition metal dichalcogenides (TMDCs). This method leverages the intercalating architecture to maintain the same crystal field and Fermi surface topologies. Our investigation reveals that CDW instability in these materials arises from electron-phonon coupling (EPC) between the d band and longitudinal acoustic (LA) phonons, mirroring TMDC's behavior. By combining α-MA2Z4 with 1H-MX2 materials in a predictive CDW phase diagram using critical EPC constants, we demonstrate the feasibility of extending CDW across material families with comparable crystal fields and reveal the crucial role in CDW instability of the competition between ionic charge transfer and electron correlation. We further uncover a strain-induced Mott transition in β2-NbGe2N4 monolayer featuring star-of-David patterns. This work highlights the potential of intercalating architecture to engineer CDW materials, expanding our understanding of CDW instability and correlation physics.

Design of an Oxide Monolayer with High ZT by a Strong Anharmonicity Unit

In this paper, a new strategy to obtain a transition-metal oxide (TMO) thermoelectric monolayer is demonstrated. We show that the TMO thermoelectric monolayer can be achieved by the replacement of a transition-metal atom with a cluster, which is composed of heavy transition atoms with abundant valence electrons. Specifically, the transition-metal atom in the XO2 (X = Ti, Zr, Hf) monolayer is replaced by the [Ag6]4+ cluster and a stable structure Ag6O2 is achieved. Due to the abundant valence electrons in the [Ag6]4+ cluster unit, n-type Ag6O2 has high electrical conductivity, which leads to a satisfactory power factor. More importantly, Ag6O2 has an extremely low phonon thermal conductivity of 0.16 W·m-1·K-1, which is one of the lowest values in thermoelectric materials. An in-depth study reveals that the extremely low value originates from the strong phonon anharmonicity and weak metal bond of the [Ag6]4+ cluster unit. Due to the satisfactory power factor and ultralow phonon thermal conductivity, Ag6O2 has high ZT at 300-700 K, and the maximum ZT is 3.77, corresponding to an energy conversion efficiency of 22.24%. Our results demonstrate that replacement of the transition-metal atom by an appropriate cluster is a good way to obtain a TMO thermoelectric monolayer.

Thermal Transport Properties of Two-Dimensional Janus MoXSiN2 (X = S, Se, and Te)

The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi2N4 structure, yielding two-dimensional Janus MoXSiN2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κl) of MoSSiN2, MoSeSiN2, and MoTeSiN2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi2N4 (224 W/mK). Such low κl values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN2 exhibits a higher κl compared to MoSeSiN2, contrary to the trend observed in most materials containing VI-group elements, where κl decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN2. This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN2 in engineering thermal management.

Monolayer 1T-Ag6S2 with Excellent Thermoelectric Properties

We obtained a new material called monolayer 1T-Ag6S2 by replacing metal atoms in 1T phase transition-metal dichalcogenide sulfides (TMDs) with octahedral Ag6 clusters. Subsequently, the thermoelectric transport properties of monolayer 1T-Ag6S2 were systematically investigated using first-principles calculations and the generalized gradient approximation (GGA-PBE) exchange correlation functional. The findings demonstrate that monolayer 1T-Ag6S2 displays characteristics of a wide-bandgap semiconductor, with a bandgap of 2.48 eV. Notably, the incorporation of Ag6 clusters disrupts the structural symmetry, effectively enhancing the electronic structure and phonon properties of the material. Due to the flat valence band near the Fermi level, the extended relaxation time of the hole results in a greater effective mass compared to the electron, leading to a significant increase in the Seebeck coefficient. Under optimal doping conditions, the power factor of monolayer 1T-Ag6S2 can achieve 14.9 mW/mK2 at 500 K. The intricate crystal structure induces phonon path bending, reduces the overall frequency of phonon vibrations (<10 THz), and causes hybridization of low-frequency optical and acoustic branches, resulting in remarkably low lattice thermal conductivity (0.20 and 0.17 W/mK along the x and y axes at 500 K, respectively). The monolayer 1T-Ag6S2 demonstrates a remarkably high figure of merit ZT of 3.14 (3.15) on the x (y) axis at 500 K, significantly higher than those of conventional TMD materials. Such excellent thermoelectric properties suggest that monolayer 1T-Ag6S2 is a promising thermoelectric (TE) material. Our work reveals the deep mechanism of cluster substitution to optimize the thermoelectric properties of materials and provides a useful reference for subsequent research.

Thermal Transport in Pentagonal CX2 (X = N, P, As, and Sb)

Two-dimensional (2D) materials with a pentagonal structure have many unique physical properties and great potential for applications in electrical, thermal, and optical fields. In this paper, the intrinsic thermal transport properties of 2D pentagonal CX2 (X = N, P, As, and Sb) are comparatively investigated. The results show that penta-CN2 has a high thermal conductivity (302.7 W/mK), while penta-CP2, penta-CAs2, and penta-CSb2 have relatively low thermal conductivities of 60.0, 36.9, and 11.8 W/mK, respectively. The main reason for the high thermal conductivity of penta-CN2 is that the small atomic mass of the N atom is comparable to that of the C atom, resulting in a preferable pentagonal structure with stronger bonds and thus a higher phonon group velocity. The reduction in the thermal conductivity of the other three materials is mainly due to the gradually increased atomic mass from P to Sb, which reduces the phonon group velocity. In addition, the large atomic mass difference does not result in a huge enhancement of the anharmonicity or weakening of the phonon relaxation time. The present work is expected to deepen the understanding of the thermal transport of main group V 2D pentagonal carbons and pave the way for their future applications, also, providing ideas for finding potential thermal management materials.

Interlayer-coupling-engineerable flat bands in twisted MoSi2N4bilayers

The two-dimensional layered semiconductor MoSi2N4, which has several advantages including high strength, excellent stability, high hole mobility, and high thermal conductivity, was recently successfully synthesized using chemical vapor deposition. Based on first-principles calculations, we investigate the effects of the twist angle and interlayer distance variation on the electronic properties of twisted bilayer MoSi2N4. The flat bands are absent for twisted bilayer MoSi2N4when the twist angleθis reduced to 3.89°. Taking twisted bilayer MoSi2N4withθof 5.09° as an example, we find that flat bands emerge as the interlayer distance decreases. As the interlayer distance can be effectively modulated by hydrostatic pressure, we propose hydrostatic pressure as a knob for tailoring the flat bands in twisted bilayer MoSi2N4. Our findings provide theoretical support for extending the applications of MoSi2N4in strong correlation physics and superconductivity.

Electronic and Excitonic Properties of MSi2 Z4 Monolayers

MA₂ Z₄ monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi₂ N₄ and WSi₂ N₄ ) are recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional (2D) materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi₂ Z₄ (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first-principles. Effective Bethe-Salpeter-equation-based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g-factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g-factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi₂ Z₄ monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the form of heterostructures. In addition, a spin-orbit induced bands inversion is observed in the heaviest studied compound, WSi₂ Sb₄ , a hallmark of its topological nature.

Tuning of the electronic and photocatalytic properties of Janus WSiGeZ4 (Z = N, P, and As) monolayers via strain engineering

Recently, MA₂Z₄ materials have received tremendous attention due to their amazing electronic, spintronic, and optoelectronic properties. In this work, we propose a class of 2D Janus materials WSiGeZ₄ (Z = N, P, and As). It was found that their electronic and photocatalytic properties are sensitive to the change of the Z element. Biaxial strain results in an indirect-direct band gap transition in WSiGeN₄ and a semiconductor-metal transition in WSiGeP₄ and WSiGeAs₄. Comprehensive studies demonstrate that these transitions as well as valley-contrasting physics are closely related to the crystal field induced orbital distribution. By taking into account several features of the excellent photocatalysts reported for water splitting, we predict three promising photocatalytic materials WSi₂N₄, WGe₂N₄, and WSiGeN₄. Their optical and photocatalytic properties can be well modulated by applying biaxial strain. Our work not only provides a class of potential electronic and optoelectronic materials but also enriches the study of Janus MA₂Z₄ materials.

High thermoelectric performance of a Sc2Si2Te6 monolayer at medium temperatures: an ab initio study

Thermoelectric (TE) materials have attracted great attention in solving the problems in the waste heat field, while low figure of merit and poor material stability drastically limit their practical applications. In this work, a two-dimensional (2D) Sc₂Si₂Te₆ monolayer was systematically explored as a promising TE material via ab initio methods. The results reveal that the Sc₂Si₂Te₆ monolayer possesses an indirect band gap with a rhombohedral crystal phase and exhibits excellent dynamic stability. The lower electronic/lattice thermal conductivity and higher electron carrier mobility result in good n-type power factor parameters between 6.24 × 10¹⁰ and 1.5 × 10¹¹ W m^-1 s^-1 K^-2 from 300 to 700 K. Such combined merits of low thermal conductivity and high power factor parameters endow the Sc₂Si₂Te₆ monolayer with superior thermoelectric properties with figure of merit (ZT) values of 1.41 and 3.81 at 300 K and 700 K, respectively. This study presented here can shed light on the future design of various 2D materials for thermoelectric applications.

The First-Principle Study on Tuning Optical Properties of MA2Z4 by Cr Replacement of Mo Atoms in MoSi2N4

Recently, with the successful preparation of MoSi2N4, an emerging family of two-dimensional (2D) layered materials has been predicted with a general formula of MA2Z4 (M: an early transition metal, A: Si or Ge and Z: N, P, or As). In terms of this new type of 2D material, how to effectively tune its light absorption properties is unclear. We systematically discuss the effects of replacing Mo with Cr atoms on the lattice structure, energy bands, and light absorption properties of 2D monolayer MoSi2N4 using density functional theory (DFT) and the Vienna Ab initio Simulation Package (VASP). Additionally, the results show that the single replacement of the atom Cr has no significant effect on the lattice structure of the outermost and sub-outer layers but plays a major role in the accumulation of electrons. In addition, the 2D MoSi2N4, Mo0.5Cr0.5Si2N4, and CrSi2N4 all have effective electron-hole separation properties. In the visible region, as the excited state increases, the required excitation energy is higher and the corresponding wavelength of light is shorter. It was found that the ultraviolet (UV)-visible spectra are red-shifted when Cr atoms replace Mo atoms in MoSi2N4; when Cr atoms and Mo atoms coexist, the coupling between Cr atoms and Mo atoms achieves modulation of the ultraviolet (UV)-visible spectra. Finally, we reveal that doping M-site atoms can effectively tune the light absorption properties of MA2Z4 materials. These results provide a strategy for the design of new 2D materials with high absorption properties.

Layered post-transition-metal dichalcogenide SnGe2N4 as a promising photoelectric material: a DFT study

First-principles calculations were performed to study a novel layered SnGe2N4 compound, which was found to be dynamically and thermally stable in the 2H phase, with the space group P6̄m2 and lattice constant a = 3.143 Å. Due to its hexagonal structure, SnGe2N4 exhibits isotropic mechanical properties on the x-y plane, where the Young's modulus is 335.49 N m-1 and the Poisson's ratio is 0.862. The layered 2H SnGe2N4 is a semiconductor with a direct band gap of 1.832 eV, allowing the absorption of infrared and visible light at a rate of about 104 cm-1. The DOS is characterized by multiple high peaks in the valence and conduction bands, making it possible for this semiconductor to absorb light in the ultraviolet region with an even higher rate of 105 cm-1. The band structure, with a strongly concave downward conduction band and rather flat valence band, leads to a high electron mobility of 1061.66 cm2 V-1 s-1, which is substantially greater than the hole mobility of 28.35 cm2 V-1 s-1. This difference in mobility is favorable for electron-hole separation. These advantages make layered 2H SnGe2N4 a very promising photoelectric material. Furthermore, the electronic structure of 2H SnGe2N4 responds well to strain and an external electric field due to the specificity of the p-d hybridization, which predominantly constructs the valence bands. As a result, strain and external electric fields can efficiently tune the band gap value of 2H SnGe2N4, where compressive strain widens the band gap, meanwhile tensile strain and external electric fields cause band gap reduction. In particular, the band gap is decreased by about 0.25 eV when the electric field strength increases by 0.1 V Å-1, making a semiconductor-metal transition possible for the layered SnGe2N4.

Rashba-type spin splitting and transport properties of novel Janus $X$WGeN$_2$ ($X =$ O, S, Se, Te) monolayers

We propose and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers $X$WGeN$_2$ ($X =$ O, S, Se, Te) using {\it ab-initio} density functional theory. All four monolayers...