1
|
Wei X, Zhang M, Zhang X, Lin Y, Jiang Z, Du A. Efficient Modulation of Schottky to Ohmic Contact in MoSi 2N 4/M 3C 2 (M = Zn, Cd, Hg) van der Waals Heterostructures. J Phys Chem Lett 2024; 15:3871-3883. [PMID: 38560820 DOI: 10.1021/acs.jpclett.4c00501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A strong Fermi level pinning (FLP) effect can induce a large Schottky barrier in metal/semiconductor contacts; reducing the Schottky barrier height (SBH) to form an Ohmic contact (OhC) is a critical problem in designing high-performance electronic devices. Herein, we report the interfacial electronic features and efficient modulation of the Schottky contact (ShC) to OhC for MoSi2N4/M3C2 (M = Zn, Cd, Hg) van der Waals heterostructures (vdWHs). We find that the MoSi2N4/M3C2 vdWHs can form a p-type ShC with small SBH with the calculated pinning factor S ≈ 0.8 for MoSi2N4/M3C2 contacts. These results indicate that the FLP effect can be effectively suppressed in MoSi2N4 contact with M3C2. Moreover, the interfacial properties and SBH of MoSi2N4/Zn3C2 vdWHs can be effectively modulated by a perpendicular electric field and biaxial strain. In particular, an efficient OhC can be achieved in MoSi2N4/Zn3C2 vdWHs by applying a positive electric field of 0.5 V/Å and strain of ±8%.
Collapse
Affiliation(s)
- Xinru Wei
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Minjie Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Xiaodong Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Yanming Lin
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Zhenyi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Aijun Du
- School of Chemistry and Physics, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4000, Australia
| |
Collapse
|
2
|
Guo S, Cui Z, Zou Y, Sa B. Z-scheme Al 2SeTe/GaSe and Al 2SeTe/InS van der Waals heterostructures for photocatalytic water splitting. Phys Chem Chem Phys 2024; 26:5368-5376. [PMID: 38269434 DOI: 10.1039/d3cp05819k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Designing Z-scheme van der Waals (vdW) heterostructured photocatalysts is a promising strategy for developing highly efficient overall water splitting. Herein, by employing density functional theory calculations, we systematically investigated the stability, electronic structures, photocatalytic and optical properties of Al2SeTe, GaSe, and InS monolayers and their corresponding vdW heterostructures. Interestingly, electronic structures show that all vdW heterostructures have direct band gaps, which is conducive to the transition of electrons from the valence band to the conduction band. Notably, Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures possess large overpotentials for Z-scheme photocatalytic water splitting, as proved by the results of band edge positions and band structure bending. Moreover, these vdW heterostructures exhibit good optical absorption in ultraviolet and visible light regions. We believe that our findings will open a new avenue for the modulation and development of Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures for photocatalytic water splitting.
Collapse
Affiliation(s)
- Shaoying Guo
- School of Pharmacy, Fujian Health College, Fuzhou, Fujian 350101, P. R. China.
- Fujian Provincial Key Laboratory of Pollution Control & Resource Reuse, Fujian Normal University, Fuzhou 350003, P. R. China
| | - Zhou Cui
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.
| | - Yanhui Zou
- School of Pharmacy, Fujian Health College, Fuzhou, Fujian 350101, P. R. China.
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.
| |
Collapse
|
3
|
Zhao J, Qi Y, Yao C, Zeng H. Modulating the electronic properties and band alignments of the arsenene/MoSi 2N 4 van der Waals heterostructure via applying strain and electric field. Phys Chem Chem Phys 2023. [PMID: 38032541 DOI: 10.1039/d3cp04877b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attention due to its exotic electronic properties and excellent stability for future applications. Using first-principles calculations, we have shown that the electronic properties of the arsenene/MoSi2N4 van der Waals (vdW) heterostructure can be effectively modulated by applying in-plane/vertical strain and vertical electric field. The arsenene/MoSi2N4 vdW heterostructure has type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. The heterostructure is predicted to have an indirect bandgap of about 0.52 eV by using the PBE functional (0.87 eV by using the hybrid functional). Furthermore, under εz = 0.5 Å vertical tensile strain or -0.05 V Å-1 vertical electric field, the arsenene/MoSi2N4 heterostructure can not only experience transition from an indirect to a direct bandgap semiconductor, but also exhibit type-II to type-I band alignment transition. The calculated optical absorption properties reveal that the formation of the vdW heterostructure can effectively enhance the light absorption, and the absorption coefficient in visible and ultraviolet regions is much higher than those of the arsenene and the MoSi2N4 monolayer. Most importantly, based on charge transfer analysis, we proposed the modulation mechanism of the electronic properties of the vdW heterostructure influenced by vertical strain and electric field. Our study provides physical insights into manipulating the electronic and optoelectronic properties of MoSi2N4 based vdW heterostructures, which may be helpful for their practical applications.
Collapse
Affiliation(s)
- Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Yunxi Qi
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Hui Zeng
- School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| |
Collapse
|
4
|
Oreshonkov AS, Sukhanova EV, Popov ZI. Phonon dynamics in MoSi 2N 4: insights from DFT calculations. Phys Chem Chem Phys 2023; 25:29831-29841. [PMID: 37888343 DOI: 10.1039/d3cp02921b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
We have reported the density functional theory investigations on the monolayered, 2 layered and bulk MoSi2N4 in three structural modifications called α1 [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023], α2 and α3 [Y. Yin, Q. Gong, M. Yi and W. Guo, Emerging Versatile Two-Dimensional MoSi2N4 Family, Adv. Funct. Mater., 2023, 2214050, DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayered, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that the Raman line at 348 cm-1 in the experimental spectra of MoSi2N4 can have more complex explanation than just Γ-point Raman-active vibration as was discussed before in [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023].
Collapse
Affiliation(s)
- A S Oreshonkov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia.
- School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - E V Sukhanova
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, 141700, Russia
| | - Z I Popov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
| |
Collapse
|
5
|
Woźniak T, Faria Junior PE, Ramzan MS, Kuc AB. Electronic and Excitonic Properties of MSi 2 Z 4 Monolayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206444. [PMID: 36772899 DOI: 10.1002/smll.202206444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 01/20/2023] [Indexed: 05/11/2023]
Abstract
MA2 Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2 N4 and WSi2 N4 ) are recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional (2D) materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi2 Z4 (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first-principles. Effective Bethe-Salpeter-equation-based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g-factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g-factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi2 Z4 monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the form of heterostructures. In addition, a spin-orbit induced bands inversion is observed in the heaviest studied compound, WSi2 Sb4 , a hallmark of its topological nature.
Collapse
Affiliation(s)
- Tomasz Woźniak
- Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wrocław, 50-370, Poland
- Department of Physics and Earth Sciences, Jacobs University Bremen, Campus Ring 1, 28759, Bremen, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstr. 15, 04318, Leipzig, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, Universitätsstraße 31, 93040, Regensburg, Germany
| | - Muhammad S Ramzan
- Department of Physics and Earth Sciences, Jacobs University Bremen, Campus Ring 1, 28759, Bremen, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstr. 15, 04318, Leipzig, Germany
- Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129, Oldenburg, Germany
| | - Agnieszka B Kuc
- Department of Physics and Earth Sciences, Jacobs University Bremen, Campus Ring 1, 28759, Bremen, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstr. 15, 04318, Leipzig, Germany
| |
Collapse
|
6
|
Pham KD. Tunability of the electronic properties and contact types of the silicane/MoSi 2N 4 heterostructure under an electric field. NEW J CHEM 2022. [DOI: 10.1039/d2nj03798j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Stacking different two-dimensional materials to generate a vertical heterostructure has been considered a promising way to obtain the desired properties and to improve the device performance.
Collapse
Affiliation(s)
- Khang D. Pham
- Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
| |
Collapse
|
7
|
Wang B, Yuan H, Yang T, Wang P, Xu X, Chang J, Kuang M, Chen H. A two-dimensional PtS 2/BN heterostructure as an S-scheme photocatalyst with enhanced activity for overall water splitting. Phys Chem Chem Phys 2022; 24:26908-26914. [DOI: 10.1039/d2cp03595b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
The optical absorption spectra of the PtS2/BN heterojunction.
Collapse
Affiliation(s)
- Biao Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- School of Resources and Environment, Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Tie Yang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Peng Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Xiaohui Xu
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Junli Chang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Minquan Kuang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
| | - Hong Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Chongqing key Laboratory of Micro Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China
- Key Laboratory of Luminescent and Real-Time Analytical Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, People's Republic of China
| |
Collapse
|