Design and synthesis of Ba3SiSe5 with suitable birefringence modulated via MIV atoms in the Ba-MIV-Q (MIV = Si, Ge; Q = S, Se) system

Crystal structure, phase width, and physical properties of the barium tetrel selenides Ba6Si2-xGexSe12 (x = 0, 0.5, 1, and 1.5) with ultralow thermal conductivity

The new compound Ba6Si2Se12 was synthesized, and the crystal structure and physical properties are reported here. Ba6Si2Se12 adopts a new structure type in the triclinic P1̄ space group with the lattice parameters a = 9.1822(7) Å, b = 12.2633(14) Å, c = 12.3636(18) Å, α = 109.277(3)°, β = 104.734(2)°, and γ = 100.4067(16)°. Notably, the structure features disordered Se22- dumbbells that have also been observed in the germanium selenide with the analogous stoichiometry (Ba6Ge2Se12). Density functional theory calculations revealed that Ba6Si2Se12 is a semiconductor with a calculated band gap of 1.74 eV. UV/vis/NIR absorption spectra indicated that the experimental band gap of Ba6Si2Se12 is 1.89 eV. While exploring this compound's phase width, it was discovered that up to 75% of the Si could be substituted with Ge while retaining the structure type. Rietveld refinements were performed on the phase-pure samples of Ba6Si2-xGexSe12 (x = 0, 0.5, 1, and 1.5) using data collected at the Canadian Light Source's High Energy Wiggler Beamline. The cell parameters, Si/Ge occupancies, and disordered Se22- occupancies were studied. Raman spectra displayed the expected Si-Se and Ge-Se stretching modes from 215 cm-1 to 280 cm-1. The samples were also hot-pressed into pellets to determine their thermal conductivity values ranging from 0.5 to 0.4 W m-1 K-1 for the x = 0, 0.5, and 1.5 samples. The x = 1 sample stood out with a remarkably low thermal conductivity of 0.3 W m-1 K-1, consistent from room temperature up to 573 K.

Second-Harmonic Generation-Positive Na2Ga2SiS6 with a Broad Band Gap and a High Laser Damage Threshold

The development of high-power solid-state lasers is in urgent need of new infrared nonlinear optical (IR NLO) materials with a wide band gap and a high laser-induced damage threshold. A new infrared nonlinear optical material Na₂Ga₂SiS₆ has been synthesized for the first time, crystallizing in the Fdd2 (no. 43) noncentrosymmetric space group. Its three-dimensional tunnel framework consists of two typical NLO active motifs [GaS₄] and [SiS₄], with Na⁺ cations located inside the tunnels. Na₂Ga₂SiS₆ exhibits comprehensive optical properties, namely, a wide transmission range, a high laser-induced damage threshold (10 × AgGaS₂), a type-I phase-matching second-harmonic generation response (0.2 × AgGaS₂), and especially a wide band gap (3.93 eV), which is the largest in the A₂M^III₂M^IVQ₆ (A = alkali metals; M^III = IIIA elements; M^IV = IVA elements; Q = S and Se) family. Therefore, Na₂Ga₂SiS₆ does not produce two-photon absorption under a 1064 nm laser pump and could be used in high-energy laser systems, which makes Na₂Ga₂SiS₆ a promising candidate for high-energy IR NLO applications.