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Kurunthatil Kuttiat T, Abraham M, Kunti AK, Amador-Mendez N, Tchernycheva M, Das S. Enriching the Deep-Red Emission in (Mg, Ba) 3M 2GeO 8: Mn 4+ (M = Al, Ga) Compositions for Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7083-7101. [PMID: 36700535 DOI: 10.1021/acsami.2c20066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Red emission from Mn4+-containing oxides inspired the development of high color rendering and cost-effective white-light-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The Mg3Al2GeO8 host is composed of three phases: orthorhombic-Mg3Ga2GeO8, orthorhombic-Mg2GeO4, and cubic-MgAl2O4. However, Mg3Ga2GeO8 secured an orthorhombic crystal structure. Interestingly, Mg3Al2GeO8: Mn4+ showed a 13-fold more intense emission than Mg3Ga2GeO8: Mn4+ since Mn4+ occupancy was preferable to [AlO6] sites compared to [GaO6]. The coexisting phases of MgAl2O4 and Mg2GeO4 in Mg3Al2GeO8: Mn4+ contributed to Mn4+ luminescence by providing additional [AlO6] and [MgO6] octahedrons for Mn4+ occupancy. Further, these sites reduced the natural reduction probability of Mn4+ to Mn2+ in [AlO4] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on Mg3M2GeO8: Mn4+ to improve the luminescence, and Mg3-xBaxM2GeO8: Mn4+ (M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba2+ ions in Mg2+ sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ exhibited a 35-fold higher emission than that of Mg3Ga1.993GeO8: 0.005Mn4+. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with Y3Al5O12: Ce3+ and 410 nm blue LED. By tuning the ratio of blue (BaMgAl10O17: Eu2+), green (Ce0.63Tb0.37MgAl11O19), and red (Mg2.73Ba0.27Al2GeO8: 0.005Mn4+) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.
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Affiliation(s)
- Thejas Kurunthatil Kuttiat
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad201002, India
| | - Malini Abraham
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad201002, India
| | - Arup K Kunti
- Centre de Nanosciences et de Nanotechnologies (C2N), Univ. Paris-Sud, Univ. Paris-Saclay, UMR 9001 CNRS, 10 Boulevard Thomas, Gobert, Palaiseau91120, France
| | - Nuño Amador-Mendez
- Centre de Nanosciences et de Nanotechnologies (C2N), Univ. Paris-Sud, Univ. Paris-Saclay, UMR 9001 CNRS, 10 Boulevard Thomas, Gobert, Palaiseau91120, France
| | - Maria Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), Univ. Paris-Sud, Univ. Paris-Saclay, UMR 9001 CNRS, 10 Boulevard Thomas, Gobert, Palaiseau91120, France
| | - Subrata Das
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad201002, India
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Meng Q, Zhao G, Zhu Q, Sun X, Li JG. Remarkable structure and luminescence regulation of a Gd 2LuAl 5O 12:Ce garnet phosphor with a Ca 2+/Si 4+ pair for high-quality w-WLED lighting. Dalton Trans 2022; 51:3159-3169. [PMID: 35112677 DOI: 10.1039/d1dt04183e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Doping Gd2LuAl5O12:Ce with a Ca2+/Si4+ pair produced a series of Gd1.97-xLuCaxAl5-xSixO12:0.03Ce (x = 0.0-1.2) garnet new phosphors, and remarkable regulation of the crystal structure and Ce3+ luminescence was achieved. Rietveld refinement and spectral analysis revealed that greater incorporation of Ca2+/Si4+ led to a higher lattice rigidity by cell contraction, a narrower bandgap, a longer average bond length/less distortion of the [CeO8] dodecahedron and decreased centroid shift/crystal field splitting of the Ce3+ 5d energy level. A blue-shifted 4f-5d1 transition, a narrower emission band, improved thermal stability of luminescence and a shorter fluorescence lifetime were observed with increasing Ca2+/Si4+ content. Applying the yellowish-green-emitting Gd0.77LuCa1.2Al3.8Si1.2O12:0.03Ce optimal phosphor (x = 1.2), together with a commercial CaAlSiN3:Eu red phosphor, in 450 nm-excited LED lighting produced a low CCT of ∼3625 K and a high CRI/R9 of ∼95.2/94.8, indicating that the phosphor has application potential in high-performance w-WLED.
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Affiliation(s)
- Qinghong Meng
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China
| | - Guoying Zhao
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China.,Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
| | - Qi Zhu
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China
| | - Xudong Sun
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China.,Foshan Graduate school of Northeastern University, Foshan, Guangdong 528311, China
| | - Ji-Guang Li
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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Meng Q, Zhao G, Zhu Q, Li X, Sun X, Li JG. Site-selective and cooperative doping of Gd 3Al 5O 12:Ce garnets for structural stabilization and warm WLED lighting of low CCT and high CRI. Dalton Trans 2021; 51:645-654. [PMID: 34908062 DOI: 10.1039/d1dt03599a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Synergistic doping of the metastable Gd3Al5O12:Ce garnet with a Ca2+/Hf4+ pair and Sc3+ to form Gd2.97-xCaxHfxScyAl3O12:0.03Ce (x = 0.5-2.0, y = 0.0-1.5, x + y = 2.0) solid solution was conducted for the structural stabilization and photoluminescence manipulation. The site selection of Ca2+/Hf4+/Sc3+ dopants and the effects of doping on the crystal structure, local coordination, band structure and Ce3+ luminescence were revealed in detail with the results of XRD, Rietveld refinement, TEM, and UV-Vis/photoluminescence spectroscopy. A decrease in Ca2+/Hf4+ and an increase in the Sc3+ content were observed to shrink the lattice, widen the bandgap of the garnet host, red-shift the excitation/emission wavelength, broaden the emission band and shorten the fluorescence lifetime of Ce3+. The spectral changes were rationalized by considering the local coordination and crystal field splitting of the Ce3+ 5d energy level. Application of typical Gd0.97Ca2Hf2Al3O12:0.03Ce (x = 2.0, y = 0) cyan and Gd2.47Ca0.5Hf0.5Sc1.5Al3O12:0.03Ce (x = 0.5, y = 1.5) greenish-yellow phosphors in w-WLED lighting produced low correlated color temperatures of ∼3842 and 3514 K, high color rendering indices of ∼88 and 93 and favorable luminous efficacies of ∼32.9 and 14.7 lm/W under the excitation of 395 nm n-UV and 450 nm blue LED chips, respectively.
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Affiliation(s)
- Qinghong Meng
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China
| | - Guoying Zhao
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China.,Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
| | - Qi Zhu
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China
| | - Xiaodong Li
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China
| | - Xudong Sun
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education) and School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning 110819, China.,Foshan Graduate school of Northeastern University, Foshan, Guangdong 528311, China
| | - Ji-Guang Li
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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