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Meyer EL, Agoro MA. Impact of FeS on the TiO 2 Layer As Support System in QDSCs. ACS OMEGA 2024; 9:37891-37900. [PMID: 39281936 PMCID: PMC11391548 DOI: 10.1021/acsomega.4c04226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Revised: 06/11/2024] [Accepted: 06/14/2024] [Indexed: 09/18/2024]
Abstract
We report on the passivation of titanium oxide with FeS from three molecular precursors with tin sulfide (SnS) photon absorbers that were fabricated and assembled to increase the performance of quantum dot sensitized solar cells (QDSSCs). FeS was loaded on the TiO2 surfaces, and then, SnS photosensitizer was deposited to form a ternary modified device. The morphology, structural structure, size distribution, chemical composition, and conversion efficiency were explored by FE-SEM, XRD, TEM, UV-vis, EDS, EIS, and J-V analysis. The CV, LSV, and stability state were also investigated for migration and separation of photogenerated charge carriers in the as-prepared cells labeled F-S-1, F-S-2, and F-S-3. The FE-SEM image of the F-S-2 cell is composed of FeS interconnected with SnS and FeS, which provided paths for electron movement compared with the F-S-1 and F-S-3 devices. The semicircle for the F/S-1 and F/S-3 solar device diameters illustrates that the high-medium frequency regain is greater than that of the F/S-2 device, implying that both cells have charge-transfer impedances and lower contact. Apparently, the F/S-2 device shows superior catalytic activity, which can be linked to the hybridization of TiO2/FeS/SnS due to the synergistic effect. The F/S-2/S-2l has a maximum efficiency η of 6.73% in comparison to F/S-1 and F/S-3, which have the same conversion efficiency of 3.82%. The results of the F/S-2 device follow a similar trend to the chronoamperometry analysis, CV, and LSV results from this study.
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Affiliation(s)
- Edson L Meyer
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice, Eastern Cape 5700, South Africa
| | - Mojeed A Agoro
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice, Eastern Cape 5700, South Africa
- Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice, Eastern Cape 5700, South Africa
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Sutorius A, Weißing R, Rindtorff Pèrez C, Fischer T, Hartl F, Basu N, Shin HS, Mathur S. Understanding vapor phase growth of hexagonal boron nitride. NANOSCALE 2024; 16:15782-15792. [PMID: 39118450 DOI: 10.1039/d4nr02624a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2024]
Abstract
Hexagonal boron nitride (hBN), with its atomically flat structure, excellent chemical stability, and large band gap energy (∼6 eV), serves as an exemplary 2D insulator in electronics. Additionally, it offers exceptional attributes for the growth and encapsulation of semiconductor transition metal dichalcogenides (TMDCs). Current methodologies for producing hBN thin films primarily involve exfoliating multi-layer or bulk crystals and thin film growth via chemical vapor deposition (CVD), which entails the thermal decomposition and surface reaction of molecular precursors like ammonia boranes (NH3BH3) and borazine (B3N3H6). These molecular precursors contain pre-existing B-N bonds, thus promoting the nucleation of BN. However, the quality and phase purity of resulting BN films are greatly influenced by the film preparation and deposition process conditions that remain a substantial concern. This study aims to comprehensively investigate the impact of varied CVD systems, parameters, and precursor chemistry on the synthesis of high-quality, large scale hBN on both catalytic and non-catalytic substrates. The comparative analysis provided new insights into most effective approaches concerning both quality and scalability of vapor phase grown hBN films.
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Affiliation(s)
- Anja Sutorius
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - René Weißing
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Carina Rindtorff Pèrez
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Thomas Fischer
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Fabian Hartl
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Nilanjan Basu
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sanjay Mathur
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
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Amadi CK, Karimpour T, Jafari M, Peng Z, Van Gerven D, Brune V, Hartl F, Siaj M, Mathur S. Synthesis and theoretical study of a mixed-ligand indium(III) complex for fabrication of β-In 2S 3 thin films via chemical vapor deposition. Dalton Trans 2024; 53:9874-9886. [PMID: 38805202 DOI: 10.1039/d4dt00394b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Two new heteroleptic indium aminothiolate compounds [InClSC2H4N(Me)SC2H4]3[1] and [InSC2H4N(Me)SC2H4(C8H5F3NO)] [2] were synthesized by in situ salt metathesis reaction involving indium trichloride, aminothiol, and N,O-β-heteroarylalkenol ligands. The complexes were subsequently purified and thoroughly characterized by nuclear magnetic resonance (NMR) analysis, elemental studies, mass spectroscopy, and X-ray diffraction single crystal analysis that showed a trigonal bipyramidal coordination of In(III) in both complexes. Thermogravimetric analysis of [1] revealed a multistep decomposition pathway and the formation of In2S3 at 350 °C, which differed from the pattern of [2] due to the lower thermal stability of [1]. Compound [2] exhibited a three-step decomposition process, resulting in the formation of In2S3 at 300 °C. The Chemical Vapor Deposition (CVD) experiment involving compound [2] was conducted on the FTO substrate, resulting in the production of singular-phase In2S3 deposits. A comprehensive characterization of these deposits, including crystal structure analysis via X-ray diffraction (XRD), and surface topography examination through scanning electron microscopy (SEM) has been completed. The presence of In-S units was also supported by the Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) of the as-deposited films. Moreover, the electronic structure and thermal properties of compound [2] were investigated through DFT calculations. Electron density localization analysis revealed that the highest occupied molecular orbital (HOMO) exhibited dense concentration at the aminothiolate moiety of the complex, while the lowest unoccupied molecular orbital (LUMO) predominantly resided at the N,O-β-heteroarylalkenolate ligand. Furthermore, our computational investigation has validated the formation of indium sulfide by elucidating an intermediate state, effectively identified through EI-MS analysis, as one of the plausible pathways for obtaining In2S3. This intermediate state comprises the aminothiolate ligand (LNS) coordinated with indium metal.
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Affiliation(s)
- Chijioke Kingsley Amadi
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Touraj Karimpour
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Maziar Jafari
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - Zhiyuan Peng
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - David Van Gerven
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Veronika Brune
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Fabian Hartl
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Mohamed Siaj
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - Sanjay Mathur
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
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Brune V, Hegemann C, Wilhelm M, Ates N, Mathur S. Molecular Precursors to Group IV Dichalcogenides MS2 (M = Ti, Zr, Hf). Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202200049] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Veronika Brune
- University of Cologne: Universitat zu Koln Chemie Greinstraße 6 50939 Cologne GERMANY
| | | | | | | | - Sanjay Mathur
- Institut für Anorganische Chemie Universität zu Köln Anorganische Chemie Greinstr. 6 50939 Köln GERMANY
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