Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism

In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.

Vortex flow induced self-assembly in CsPbI3 rods leads to an improved electrical response towards external analytes

We present a facile and versatile strategy for enabling CsPbI3 rods to self-assemble at an air-water interface. The CsPbI3 rods, which float at the air-water interface, align under the influence of the rotational flow field due to the vortex motion of a water subphase. The aligned CsPbI3 rods could be transferred onto various substrates without involving any sophisticated instrumentation. The temperature of the subphase, the concentration of the CsPbI3 aliquot, the rotational speed inducing vortex motion, and the lift-off position and angle of the substrate were optimized to achieve high coverage of the self-assembled rods of CsPbI3 on glass. The Rietveld refinement of the XRD profile confirms that the aligned CsPbI3 is in the pure orthorhombic phase ascribed to the Pnma space group. The hydrophilic carboxylic group of the oleic acid attaches to the Pb atoms of the halide perovskite rods, while their hydrophobic tails encapsulate the rods within their shell, creating a shielding barrier between the water and the perovskite surface like a reverse micelle. The aligned CsPbI3 rods exhibit a nearly 47-fold increment in current upon exposure to ammonia gas (amounting to 5.6 times higher sensitivity in ammonia sensing) compared to the non-aligned CsPbI3 rods.

Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.