Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

Bright and Stable Yellow Quantum Dot Light-Emitting Diodes Through Core-Shell Nanostructure Engineering

Solution-processed and efficient yellow quantum dot light-emitting diodes (QLEDs) are considered key optoelectronic devices for lighting, display, and signal indication. However, limited synthesis routes for yellow quantum dots (QDs), combined with inferior stress-relaxation of the core-shell interface, pose challenges to their commercialization. Herein, a nanostructure tailoring strategy for high-quality yellow CdZnSe/ZnSe/ZnS core/shell QDs using a "stepwise high-temperature nucleation-shell growth" method is introduced. The synthesized CdZnSe-based QDs effectively smoothed the release stress of the core-shell interface and revealed a near-unit photoluminescence quantum yield, with nonblinking behavior and matched energy level, which accelerated radiative recombination and charge injection balance for device operation. Consequently, the yellow CdZnSe-based QLEDs exhibited a peak external quantum efficiency of 23.7%, a maximum luminance of 686 050 cd m-2, and a current efficiency of 103.2 cd A-1, along with an operating half-lifetime of 428 523 h at 100 cd m-2. To the best of the knowledge, the luminance and operational stability of the device are found to be the highest values reported for yellow LEDs. Moreover, devices with electroluminescence (EL) peaks at 570-605 nm exhibited excellent EQEs, surpassing 20%. The work is expected to significantly push the development of RGBY-based display panels and white LEDs.

Inverted device architecture for high efficiency single-layer organic light-emitting diodes with imbalanced charge transport

Many wide-gap organic semiconductors exhibit imbalanced electron and hole transport, therefore efficient organic light-emitting diodes require a multilayer architecture of electron- and hole-transport materials to confine charge recombination to the emissive layer. Here, we show that even for emitters with imbalanced charge transport, it is possible to obtain highly efficient single-layer organic light emitting diodes (OLEDs), without the need for additional charge-transport and blocking layers. For hole-dominated emitters, an inverted single-layer device architecture with ohmic bottom-electron and top-hole contacts moves the emission zone away from the metal top electrode, thereby more than doubling the optical outcoupling efficiency. Finally, a blue-emitting inverted single-layer OLED based on thermally activated delayed fluorescence is achieved, exhibiting a high external quantum efficiency of 19% with little roll-off at high brightness, demonstrating that balanced charge transport is not a prerequisite for highly efficient single-layer OLEDs.

Stability and photocurrent enhancement of photodetectors by using core/shell structured CsPbBr3/TiO2 quantum dots and 2D materials

Ultra-stable CsPbBr3 perovskite quantum dots (QDs) were prepared, and the performance of the photodetector fabricated from them was enhanced by 2D material incorporation. This multi-component photodetector appears to have good stability in the ambient utilization environment. All inorganic CsPbBr3 QDs are potential candidates for application in photodetection devices. However, QDs have several issues such as defects on the QD surface, degradation under environmental conditions, and unfavorable carrier mobility limiting the high performance of the photodetectors. This work addresses these issues by fabricating a core/shell structure and introducing 2D materials (MXenes, Ti3C2Tx) into the device. Here, three types of photodetectors with QDs only, QDs with a core/shell structure, and QDs with a core/shell structure and MXenes are fabricated for systematic study. The CsPbBr3/TiO2 photodetector demonstrated a two times photocurrent enhancement compared to bare QDs and had good device stability after TiO2 shell coating. After introducing Ti3C2Tx into CsPbBr3/TiO2, a significant photocurrent enhancement from nanoampere (nA) to microampere (μA) was observed, revealing that MXenes can improve the photoelectric response of perovskite materials significantly. Higher photocurrent can avoid signal interference from environmental noise for better practical feasibility. This study provides a systematic understanding of the photocurrent conversion of perovskite quantum dots that is beneficial in advancing optoelectronic device integration, especially for flexible wearable device applications.

Inverted Solution-Processed Quantum Dot Light-Emitting Devices with Wide Band Gap Quantum Dot Interlayers

Despite its benefits for facilitating device fabrication, utilization of a polymeric hole transport layer (HTL) in inverted quantum dots (QDs) light-emitting devices (IQLEDs) often leads to poor device performance. In this work, we find that the poor performance arises primarily from electron leakage, inefficient charge injection, and significant exciton quenching at the HTL interface in the inverted architecture and not due to solvent damage effects as is widely believed. We also find that using a layer of wider band gap QDs as an interlayer (IL) in between the HTL and the main QDs' emission material layer (EML) can facilitate hole injection, suppress electron leakage, and reduce exciton quenching, effectively mitigating the poor interface effects and resulting in high electroluminescence performance. Using an IL in IQLEDs with a solution-processed poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB), HTL improves the efficiency by 2.85× (from 3 to 8.56%) and prolongs the lifetime by 9.4× (from 1266 to 11,950 h at 100 cd/m²), which, to the best of our knowledge, is the longest lifetime for an R-IQLED with a solution-coated HTL. Measurements on single-carrier devices reveal that while electron injection becomes easier as the band gap of the QDs decreases, hole injection surprisingly becomes more difficult, indicating that EMLs of QLEDs are more electron-rich in the case of red devices and more hole-rich in the case of blue devices. Ultraviolet photoelectron spectroscopy measurements verify that blue QDs have a shallower valence band energy than their red counterparts, corroborating these conclusions. The findings in this work, therefore, provide not only a simple approach for achieving high performance in IQLEDs with solution-coated HTLs but also novel insights into charge injection and its dependence on QDs' band gap as well as into different HTL interface properties of the inverted versus upright architecture.