Surface passivation of organometal halide perovskites by atomic layer deposition: an investigation of the mechanism of efficient inverted planar solar cells

A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite-Silicon Tandems

The primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide-based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite-silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area.

Key Roles of Interfaces in Inverted Metal-Halide Perovskite Solar Cells

Metal-halide perovskite solar cells (PSCs), an emerging technology for transforming solar energy into a clean source of electricity, have reached efficiency levels comparable to those of commercial silicon cells. Compared with other types of PSCs, inverted perovskite solar cells (IPSCs) have shown promise with regard to commercialization due to their facile fabrication and excellent optoelectronic properties. The interlayer interfaces play an important role in the performance of perovskite cells, not only affecting charge transfer and transport, but also acting as a barrier against oxygen and moisture permeation. Herein, we describe and summarize the last three years of studies that summarize the advantages of interface engineering-based advances for the commercialization of IPSCs. This review includes a brief introduction of the structure and working principle of IPSCs, and analyzes how interfaces affect the performance of IPSC devices from the perspective of photovoltaic performance and device lifetime. In addition, a comprehensive summary of various interface engineering approaches to solving these problems and challenges in IPSCs, including the use of interlayers, interface modification, defect passivation, and others, is summarized. Moreover, based upon current developments and breakthroughs, fundamental and engineering perspectives on future commercialization pathways are provided for the innovation and design of next-generation IPSCs.

Suppressed Ion Migration in FA-Rich Perovskite Photovoltaics through Enhanced Nucleation of Encapsulation Interface

With excellent homogeneity, compactness and controllable thickness, atomic layer deposition (ALD) technology is widely used in perovskite solar cells (PSCs). However, residual organic sources and undesired reactions pose serious challenges to device performance as well as stability. Here, ester groups of poly(ethylene-co-vinyl acetate) are introduced as a reaction medium to promote the nucleation and complete conversion of tetrakis(dimethylamino)tin(IV) (TDMA-Sn). Through simulations and experiments, it is verified that ester groups as Lewis bases can coordinate with TDMA-Sn to facilitate homogeneous deposition of ALD-SnOx , which acts as self-encapsulated interface with blocking properties against external moisture as well as internal ion migration. Meanwhile, a comprehensive evaluation of the self-encapsulated interface reveals that the energy level alignment is optimized to improve the carrier transport. Finally, the self-encapsulated device obtains a champion photovoltaic conversion efficiency (PCE) of 22.06% and retains 85% of the initial PCE after being stored at 85 °C with relative humidity of 85% for more than 800 h.

In situx-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al2O3on SiOx/Si: Interface dipole and persistent surface groups

Atomic layer deposition (ALD) has become an essential technology in many areas. To better develop and use this technology, it is of the pivot to understand the surface chemistry during the ALD film growth. The growth of an ALD oxide film may also induce an electric dipole at the interface, which may be further tuned to modulate the flat band voltage for electronic device applications. To understand the associated surface chemistry and interface dipole formation process, we herein employ anin situx-ray photoelectron spectroscopy technique to study the ALD growth of Al₂O₃, from trimethylaluminum and H₂O, on the SiO_x/Si surface. We find that an electric dipole is formed at the Al₂O₃/SiO_xinterface immediately after the first Al₂O₃layer is deposited. We also observe persistent surface methyl groups in the H₂O half-cycle during ALD, and the amount of the persistent methyls is particularly higher during the initial Al₂O₃ALD growth, which suggests the formation of Si-CH₃on the surface. These findings can provide useful routes and insights toward interface engineering by ALD.

Hole-Transporting Vanadium-Containing Oxide (V2O5-x) Interlayers Enhance Stability of α-FAPbI3-Based Perovskite Solar Cells (∼23%)

Perovskite solar cells (PSCs) have attracted tremendous interest due to their outstanding intrinsic photovoltaic properties, such as absorption coefficients, exciton binding energies, and long carrier lifetimes. Although the power conversion efficiency (PCE) of PSCs is close to the Si solar cells' PCE, device stability remains a challenge. In particular, the device stability is more critical in n-i-p normal structured PSCs, which show a higher efficiency than p-i-n inverted ones, simply because of the much lower stability of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spi). To prevent the devices from degrading performances arising both from perovskite's degradation and Spi instability, we prepare atomic layer deposition (ALD)-grown transition metal oxides for hole transport with efficient n-i-p PSCs. We demonstrate low-temperature (T_dep = 45 °C)-grown amorphous ALD-V₂O_5-x with oxygen-deficient traps on top of Spi as an interlayer, which prevents the devices' degradation in performance. By blocking moisture and oxygen, ALD-V₂O_5-x was able to greatly improve the devices' stability by preserving the photovoltaic α-FAPbI₃ phase while suppressing both Li ion diffusion from the additive and Au ions from the electrode. As a result, we successfully fabricate PSCs with passivation/hole-transporting bifunctional Spi/ALD-V₂O_5-x interlayers without sacrificing photovoltaic performances, and the device stability is significantly improved.

Quantifying Charge Carrier Recombination Losses in MAPbI3/C60 and MAPbI3/Spiro-OMeTAD with and without Bias Illumination

To increase the open-circuit voltage in perovskite-based solar cells, recombination processes at the interface with transport layers (TLs) should be identified and reduced. We investigated the charge carrier dynamics in bilayers of methylammonium lead iodide (MAPbI3) with C60 or Spiro-OMeTAD using time-resolved microwave conductance (TRMC) measurements with and without bias illumination (BI). By modeling the results, we quantified recombination losses in bare MAPbI3 and extraction into the TLs. Only under BI did we find that the density of deep traps increases in bare MAPbI3, substantially enhancing trap-mediated losses. This reversible process is prevented in a bilayer with C60 but not with Spiro-OMeTAD. While under BI extraction rates reduce significantly in both bilayers, only in MAPbI3/Spiro-OMeTAD does interfacial recombination also increases, substantially reducing the quasi Fermi level splitting. This work demonstrates the impact of BI on charge dynamics and shows that adjusting the Fermi level of TLs is imperative to reduce interfacial recombination losses.

Chemical Interaction at the MoO3/CH3NH3PbI3-xClx Interface

The limited long-term stability of metal halide perovskite-based solar cells is a bottleneck in their drive toward widespread commercial adaptation. The organic hole-transport materials (HTMs) have been implicated in the degradation, and metal oxide layers are proposed as alternatives. One of the most prominent metal oxide HTM in organic photovoltaics is MoO₃. However, the use of MoO₃ as HTM in metal halide perovskite-based devices causes a severe solar cell deterioration. Thus, the formation of the MoO₃/CH₃NH₃PbI_3-xCl_x (MAPbI_3-xCl_x) heterojunction is systematically studied by synchrotron-based hard X-ray photoelectron spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and Raman spectroscopy. Upon MoO₃ deposition, significant chemical interaction is induced at the MoO₃/MAPbI_3-xCl_x interface: substoichiometric molybdenum oxide is present, and the perovskite decomposes in the proximity of the interface, leading to accumulation of PbI₂ on the MoO₃ cover layer. Furthermore, we find evidence for the formation of new compounds such as PbMoO₄, PbN₂O₂, and PbO as a result of the MAPbI_3-xCl_x decomposition and suggest chemical reaction pathways to describe the underlying mechanism. These findings suggest that the (direct) MoO₃/MAPbI_3-xCl_x interface may be inherently unstable. It provides an explanation for the low power conversion efficiencies of metal halide perovskite solar cells that use MoO₃ as a hole-transport material and in which there is a direct contact between MoO₃ and perovskite.