1
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Hur JS, Lee S, Moon J, Jung HG, Jeon J, Yoon SH, Park JH, Jeong JK. Oxide and 2D TMD semiconductors for 3D DRAM cell transistors. NANOSCALE HORIZONS 2024; 9:934-945. [PMID: 38563255 DOI: 10.1039/d4nh00057a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
As the downscaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM technology faces various challenges in securing cost-effective high cell transistor performance. Therefore, many researchers are exploring the application of next-generation semiconductor materials, such as transition oxide semiconductors (OSs) and metal dichalcogenides (TMDs), to address these challenges and to realize 3D DRAM. This study provides an overview of the proposed structures for 3D DRAM, compares the characteristics of OSs and TMDs, and discusses the feasibility of employing the OSs and TMDs as the channel material for 3D DRAM. Furthermore, we review recent progress in 3D DRAM using the OSs, discussing their potential to overcome challenges in silicon-based approaches.
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Affiliation(s)
- Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
| | - Sungsoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Jiwon Moon
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Hang-Gyo Jung
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jongwook Jeon
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Seong Hun Yoon
- Department of Display Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
- Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
- Department of Display Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
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2
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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3
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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4
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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5
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Wang Q, Wang S, Li J, Gan Y, Jin M, Shi R, Amini A, Wang N, Cheng C. Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205638. [PMID: 36446619 PMCID: PMC9875684 DOI: 10.1002/advs.202205638] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 10/28/2022] [Indexed: 06/16/2023]
Abstract
Chemical vapor deposition (CVD) has been widely used to produce high quality 2D transitional metal dichalcogenides (2D TMDCs). However, violent evaporation and large diffusivity discrepancy of metal and chalcogen precursors at elevated temperatures often result in poor regulation on X:M molar ratio (M = Mo, W etc.; X = S, Se, and Te), and thus it is rather challenging to achieve the desired products of 2D TMDCs. Here, a modified spatially confined strategy (MSCS) is utilized to suppress the rising S vapor concentration between two aspectant substrates, upon which the lateral/vertical growth of 2D WS2 can be selectively regulated via proper S:W zones correspond to greatly broadened time/growth windows. An S:W-time (SW-T) growth diagram was thus proposed as a mapping guide for the general understanding of CVD growth of 2D WS2 and the design of growth routes for the desired 2D WS2 . Consequently, a comprehensive growth management of atomically thin WS2 is achieved, including the versatile controls of domain size, layer number, and lateral/vertical heterostructures (MoS2 -WS2 ). The lateral heterostructures show an enhanced hydrogen evolution reaction performance. This study advances the substantial understanding to the growth kinetics and provides an effective MSCS protocol for growth design and management of 2D TMDCs.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Shi Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Jingyi Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Yichen Gan
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Mengtian Jin
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Run Shi
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Abbas Amini
- Center for Infrastructure EngineeringWestern Sydney UniversityKingswoodNew South Wales2751Australia
| | - Ning Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Chun Cheng
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
- Guangdong Provincial Key Laboratory of Energy Materials for Electric PowerSouthern University of Science and TechnologyShenzhen518055China
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6
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Mattinen M, Gity F, Coleman E, Vonk JFA, Verheijen MA, Duffy R, Kessels WMM, Bol AA. Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2022; 34:7280-7292. [PMID: 36032554 PMCID: PMC9404538 DOI: 10.1021/acs.chemmater.2c01154] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional transition metal dichalcogenides, such as MoS2, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS2, TiS2, and WS2 films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H2S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H2 to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS2 films deposited at 100 °C. The capability to deposit MoS2 on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.
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Affiliation(s)
- Miika Mattinen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Farzan Gity
- Tyndall
National Institute, University College Cork, Lee Maltings, Dyke Parade, T12 R5CP Cork, Ireland
| | - Emma Coleman
- Tyndall
National Institute, University College Cork, Lee Maltings, Dyke Parade, T12 R5CP Cork, Ireland
| | - Joris F. A. Vonk
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Eurofins
Materials Science Netherlands, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Ray Duffy
- Tyndall
National Institute, University College Cork, Lee Maltings, Dyke Parade, T12 R5CP Cork, Ireland
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Department
of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109-1055, United States
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7
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS MATERIALS AU 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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8
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Cho Y, Lee S, Cho H, Kang D, Yi Y, Kim K, Park JH, Im S. Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO 3 and LiF. SMALL METHODS 2022; 6:e2101073. [PMID: 35037415 DOI: 10.1002/smtd.202101073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 12/10/2021] [Indexed: 06/14/2023]
Abstract
To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe2 (or MoS2 ) channels using a polydimethylsiloxane stamp. MoO3 or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe2 -based complementary inverter because MoO3 - and LiF-doping by separate stamps effectively modifies two ambipolar MoTe2 channels to p- and n-type, respectively.
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Affiliation(s)
- Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Sol Lee
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Hyunmin Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Donghee Kang
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Kwanpyo Kim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Ji Hoon Park
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, 16890, South Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
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9
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Zang L, Chen L, Tan D, Cao X, Sun N, Jiang C. Research on Multi‐morphology Evolution of MoS
2
in Chemical Vapor Deposition. ChemistrySelect 2021. [DOI: 10.1002/slct.202101843] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Lingyu Zang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Long Chen
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Dongchen Tan
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Xuguang Cao
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Nan Sun
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Chengming Jiang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
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