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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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Wang M, Lin Y. Gallium-based liquid metals as reaction media for nanomaterials synthesis. NANOSCALE 2024; 16:6915-6933. [PMID: 38501969 DOI: 10.1039/d3nr06566a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Gallium-based liquid metals (LMs) and their alloys have gained prominence in the realm of flexible and stretchable electronics. Recent advances have expanded the interest to explore the electron-rich core and interface of LMs to synthesize various nanomaterials, where Ga-based LMs serve as versatile reaction media. In this paper, we delve into the latest developments within this burgeoning field. Our discussion begins by elucidating the unique attributes of LMs that render them suitable as reaction media, including their high metal solubility, low standard reduction potential, self-limiting oxidation and ultra-smooth and "layer" surface. We then provide a comprehensive categorized summary of utilizing these features to fabricate a variety of nanomaterials, including pure metallic materials (metal alloys, metal crystals, porous metals, high-entropy alloys and metallic single atoms), metal-inorganic compounds (2D metal oxides, 2D metallic inorganic compounds and 2D graphitic materials), as well as metal-organic composites (metal-organic frameworks). This paper concludes by discussing the current challenges in this field and exploring potential future directions. The versatility and unique properties of Ga-based LMs are poised to play a pivotal role in the future of nanomaterial science, paving the way for more efficient, sustainable, and innovative technological solutions.
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Affiliation(s)
- Ming Wang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, 117585, Singapore.
| | - Yiliang Lin
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, 117585, Singapore.
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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