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Tang H, Anwar T, Jang MS, Tagliabue G. Light-Intensity Switching of Graphene/WSe 2 Synaptic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309876. [PMID: 38647376 PMCID: PMC11199970 DOI: 10.1002/advs.202309876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2023] [Revised: 03/28/2024] [Indexed: 04/25/2024]
Abstract
2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed results in ultrahigh responsivity and tunable photoconductance. Yet, optical potentiation and depression remain mostly modulated by gate bias, requiring relatively high energy inputs. Thus, advanced all-optical synapse switching strategies are still needed. In this work, a reversible switching between positive photoconductivity (PPC) and negative photoconductivity (NPC) is achieved in graphene/WSe2 vdWH solely through light-intensity modulation. Consequently, the graphene/WSe2 synaptic device shows tunable optical potentiation and depression behavior with an ultralow power consumption of 127 aJ. The study further unravels the complex interplay of gate bias and incident light power in determining the sign and magnitude of the photocurrent, showing the critical role of charge trapping and photogating at interfaces. Interestingly, it is found that switching between PPC to NPC can be also obtained at 0 mV drain-source voltage. Overall, the reversible potentiation/depression effect based on light intensity modulation and its combination with additional gate bias tunability is very appealing for the development of energy-efficient optical communications and neuromorphic computing.
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Affiliation(s)
- Hongyu Tang
- Laboratory of Nanoscience for Energy Technologies (LNET)École Polytechnique Fédérale de LausanneStation 9LausanneCH‐1015Switzerland
- Present address:
Academy of Engineering & Technology, Fudan UniversityHandan Road 220Shanghai200433China
| | - Tarique Anwar
- Laboratory of Nanoscience for Energy Technologies (LNET)École Polytechnique Fédérale de LausanneStation 9LausanneCH‐1015Switzerland
| | - Min Seok Jang
- School of Electrical EngineeringKorea Advanced Institute of Science and TechnologyDaejeon34141Republic of Korea
| | - Giulia Tagliabue
- Laboratory of Nanoscience for Energy Technologies (LNET)École Polytechnique Fédérale de LausanneStation 9LausanneCH‐1015Switzerland
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2
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Tong L, Su C, Li H, Wang X, Fan W, Wang Q, Kunsági-Máté S, Yan H, Yin S. Self-Driven Gr/WSe 2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38017658 DOI: 10.1021/acsami.3c14331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional (2D) self-driven photodetectors have a wide range of applications in wearable, imaging, and flexible electronics. However, the preparation of most self-powered photodetectors is still complex and time-consuming. Simultaneously, the constant work function of a metal, numerous defects, and a large Schottky barrier at the 2D/metal interface hinder the transmission and collection of optical carriers, which will suppress the optical responsivity of the device. This paper proposed a self-driven graphene/WSe2/graphene (Gr/WSe2/Gr) photodetector with asymmetric Schottky van der Waals (vdWs) contacts. The vdWs contacts are formed by transferring Gr as electrodes using the dry-transfer method, obviating the limitations of defects and Fermi-level pinning at the interface of electrodes made by conventional metal deposition methods to a great extent and resulting in superior dynamic response, which leads to a more efficient and faster collection of photogenerated carriers. This work also demonstrates that the significant surface potential difference of Gr electrodes is a crucial factor to ensure their superior performance. The self-driven Gr/WSe2/Gr photodetector exhibits an ultrahigh Ilight/Idark ratio of 106 with a responsivity value of 20.31 mA/W and an open-circuit voltage of 0.37 V at zero bias. The photodetector also has ultrafast response speeds of 42.9 and 56.0 μs. This paper provides a feasible way to develop self-driven optoelectronic devices with a simple structure and excellent performance.
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Affiliation(s)
- Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China
| | - Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd., Tianjin 301700, China
| | - Sándor Kunsági-Máté
- Department of Organic and Medicinal Chemistry, Faculty of Pharmacy, University of Pécs, Honvéd útja 1, Honvéd street 1, Pécs H-7624, Hungary
- János Szentágothai Research Center, Ifjúság útja 20, Pécs H-7624, Hungary
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
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Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
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Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
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Zhang Y, Wang L, Lei Y, Wang B, Lu Y, Yao Y, Zhang N, Lin D, Jiang Z, Guo H, Zhang J, Hu H. Self-Powered Bidirectional Photoresponse in High-Detectivity WSe 2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation. ACS NANO 2022; 16:20937-20945. [PMID: 36413009 DOI: 10.1021/acsnano.2c08542] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
An artificial retina system shows a promising potential to achieve fast response, low power consumption, and high integration density for vision sensing systems. Optoelectronic sensors, which can emulate the neurobiological functionalities of retinal neurons, are crucial in the artificial retina systems. Here, we propose a WSe2 phototransistor with asymmetrical van der Waals (vdWs) stacking that can be used as an optoelectronic sensor in artificial retina systems. Through the utilization of the gate-tunable self-powered bidirectional photoresponse of this phototransistor, the neurobiological functionalities of both bipolar cells and cone cells, as well as the hierarchical connectivity between these two types of retinal neurons, are successfully mimicked by a single device. This self-powered bidirectional photoresponse is attributed to the asymmetrical vdWs stacking structure, which enables the transition from an n-p to p+-p homojunction in the WSe2 channel under different polarities of gate bias. Moreover, the detectivity and ON/OFF ratio of this phototransistor reach as high as 1.8 × 1013 Jones and 5.3 × 104, respectively, and a rise/fall time <80 μs is achieved, as well, which reveals good photodetection performance. The proof of this device provides a pathway for the future development of neuromorphic vision devices and systems.
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Affiliation(s)
- Yichi Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Liming Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yuanying Lei
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Bo Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yao Lu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Youyuan Yao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Ningning Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Dongdong Lin
- Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Department of Microelectronic Science and Engineering, Ningbo University, Ningbo315211, China
| | - Zuimin Jiang
- Department of Physics, Fudan University, Shanghai200433, China
| | - Hui Guo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Jincheng Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Huiyong Hu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
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Pires LS, Magalhães FD, Pinto AM. New Polymeric Composites Based on Two-Dimensional Nanomaterials for Biomedical Applications. Polymers (Basel) 2022; 14:1464. [PMID: 35406337 PMCID: PMC9003422 DOI: 10.3390/polym14071464] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Revised: 03/29/2022] [Accepted: 04/01/2022] [Indexed: 02/06/2023] Open
Abstract
The constant evolution and advancement of the biomedical field requires robust and innovative research. Two-dimensional nanomaterials are an emerging class of materials that have risen the attention of the scientific community. Their unique properties, such as high surface-to-volume ratio, easy functionalization, photothermal conversion, among others, make them highly versatile for a plethora of applications ranging from energy storage, optoelectronics, to biomedical applications. Recent works have proven the efficiency of 2D nanomaterials for cancer photothermal therapy (PTT), drug delivery, tissue engineering, and biosensing. Combining these materials with hydrogels and scaffolds can enhance their biocompatibility and improve treatment for a variety of diseases/injuries. However, given that the use of two-dimensional nanomaterials-based polymeric composites for biomedical applications is a very recent subject, there is a lot of scattered information. Hence, this review gathers the most recent works employing these polymeric composites for biomedical applications, providing the reader with a general overview of their potential.
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Affiliation(s)
- Laura S. Pires
- LEPABE, Faculdade de Engenharia, Universidade do Porto, Rua Roberto Frias, 4200-465 Porto, Portugal; (L.S.P.); (F.D.M.)
| | - Fernão D. Magalhães
- LEPABE, Faculdade de Engenharia, Universidade do Porto, Rua Roberto Frias, 4200-465 Porto, Portugal; (L.S.P.); (F.D.M.)
| | - Artur M. Pinto
- LEPABE, Faculdade de Engenharia, Universidade do Porto, Rua Roberto Frias, 4200-465 Porto, Portugal; (L.S.P.); (F.D.M.)
- i3S—Instituto de Investigação e Inovação em Saúde, Universidade do Porto, Rua Alfredo Allen, 4200-135 Porto, Portugal
- INEB—Instituto de Engenharia Biomédica, Universidade do Porto, Rua Alfredo Allen, 4200-135 Porto, Portugal
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