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Arumugasamy SK, Chellasamy G, Murugan N, Govindaraju S, Yun K, Choi MJ. Synthesis and surface engineering of Ag chalcogenide quantum dots for near-infrared biophotonic applications. Adv Colloid Interface Sci 2024; 331:103245. [PMID: 38945073 DOI: 10.1016/j.cis.2024.103245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 05/22/2024] [Accepted: 06/24/2024] [Indexed: 07/02/2024]
Abstract
Quantum dots (QDs), a novel category of semiconductor materials, exhibit extraordinary capabilities in tuning optical characteristics. Their emergence in biophotonics has been noteworthy, particularly in bio-imaging, biosensing, and theranostics applications. Although conventional QDs such as PbS, CdSe, CdS, and HgTe have garnered attention for their promising features, the presence of heavy metals in these QDs poses significant challenges for biological use. To address these concerns, the development of Ag chalcogenide QDs has gained prominence owing to their near-infrared emission and exceptionally low toxicity, rendering them suitable for biological applications. This review explores recent advancements in Ag chalcogenide QDs, focusing on their synthesis methodologies, surface chemistry modifications, and wide-ranging applications in biomedicine. Additionally, it identifies future directions in material science, highlighting the potential of these innovative QDs in revolutionizing the field.
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Affiliation(s)
- Shiva Kumar Arumugasamy
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Gayathri Chellasamy
- Department of Bionanotechnology, Gachon University, Seongnam-si 13120, Republic of Korea
| | - Nanthagopal Murugan
- School of Materials Science and Engineering, University of Ulsan (UOU), Ulsan 44776, Republic of Korea
| | - Saravanan Govindaraju
- Department of Bionanotechnology, Gachon University, Seongnam-si 13120, Republic of Korea
| | - Kyusik Yun
- Department of Bionanotechnology, Gachon University, Seongnam-si 13120, Republic of Korea
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
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2
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Uematsu T, Izumi R, Sugano S, Sugano R, Hirano T, Motomura G, Torimoto T, Kuwabata S. Spectrally narrow band-edge photoluminescence from AgInS 2-based core/shell quantum dots for electroluminescence applications. Faraday Discuss 2024; 250:281-297. [PMID: 37966107 DOI: 10.1039/d3fd00142c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer.
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Affiliation(s)
- Taro Uematsu
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka 565-0871, Japan
| | - Ryunosuke Izumi
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
| | - Shoki Sugano
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
| | - Riku Sugano
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
| | - Tatsuya Hirano
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
| | - Genichi Motomura
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
- Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo 157-8510, Japan
| | - Tsukasa Torimoto
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
| | - Susumu Kuwabata
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka 565-0871, Japan
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3
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Zhao X, Wang X, Jia R, Lin Y, Guo T, Wu L, Hu X, Zhao T, Yan D, Zhu L, Chen Z, Xu X, Chen X, Song X. High-sensitivity hybrid MoSe 2/AgInGaS quantum dot heterojunction photodetector. RSC Adv 2024; 14:1962-1969. [PMID: 38196903 PMCID: PMC10774710 DOI: 10.1039/d3ra07240a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/04/2024] [Indexed: 01/11/2024] Open
Abstract
Zero-dimensional (0D)-two-dimensional (2D) hybrid photodetectors have received widespread attention due to their outstanding photoelectric performances. However, these devices with high performances mainly employ quantum dots that contain toxic elements as sensitizing layers, which restricts their practical applications. In this work, we used eco-friendly AgInGaS quantum dots (AIGS-QDs) as a highly light-absorbing layer and molybdenum diselenide (MoSe2) as a charge transfer layer to construct a 0D-2D hybrid photodetector. Notably, we observed that MoSe2 strongly quenches the photoluminescence (PL) of AIGS-QDs and decreases the decay time of PL in the MoSe2/AIGS-QDs heterojunction. The MoSe2/AIGS-QDs hybrid photodetector demonstrates a responsivity of 14.3 A W-1 and a high detectivity of 6.4 × 1011 Jones. Moreover, the detectivity of the hybrid phototransistor is significantly enhanced by more than three times compared with that of the MoSe2 photodetector. Our work suggests that 0D-2D hybrid photodetectors with multiplex I-III-VI QDs provide promising potential for future high-sensitivity photodetectors.
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Affiliation(s)
- Xunjia Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Runmeng Jia
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Yuhai Lin
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - TingTing Guo
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Linxiang Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xudong Hu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Tong Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Danni Yan
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Lin Zhu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xinsen Xu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
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4
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Zhang S, Yang L, Liu G, Zhang S, Shan Q, Zeng H. Eco-Friendly Zn-Ag-In-Ga-S Quantum Dots: Amorphous Indium Sulfide Passivated Silver/Sulfur Vacancies Achieving Efficient Red Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:50254-50264. [PMID: 37847863 DOI: 10.1021/acsami.3c10642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
I-III-VI quantum dots (QDs) and derivatives (I, III, and VI are Ag+/Cu+, Ga3+/In3+, and S2-/Se2-, respectively) are the ideal candidates to replace II-VI (e.g., CdSe) and perovskite QDs due to their nontoxicity, pure color, high photoluminescence quantum yield (PLQY), and full visible coverage. However, the chaotic cation alignment in multielement systems can easily lead to the formation of multiple surface vacancies, highlighted as VI and VVI, leading to nonradiative recombination and nonequilibrium carrier distribution, which severely limit the performance improvement of materials and devices. Here, based on Zn-Ag-In-Ga-S QDs, we construct an ultrathin indium sulfide shell that can passivate electron vacancies and convert donor/acceptor level concentrations. The optimized In-rich 2-layer indium sulfide structure not only enhances the radiative recombination rate by preventing further VS formation but also achieves the typical DAP emission enhancement, achieving a significant increase in PLQY to 86.2% at 628 nm. Moreover, the optimized structure can mitigate the lattice distortion and make the carrier distribution in the interior of the QDs more balanced. On this basis, red QD light-emitting diodes (QLEDs) with the highest external quantum efficiency (EQE; 5.32%) to date were obtained, providing a novel scheme for improving I-III-VI QD-based QLED efficiency.
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Affiliation(s)
- Shuai Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Gaoyu Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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5
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Shishodia S, Chouchene B, Gries T, Schneider R. Selected I-III-VI 2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2889. [PMID: 37947733 PMCID: PMC10648425 DOI: 10.3390/nano13212889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 10/26/2023] [Accepted: 10/29/2023] [Indexed: 11/12/2023]
Abstract
I-III-VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of QDs has become the mainstream light-harvesting material in QDSSCs due to the ability to tune their electronic properties through size, shape, and composition and the ability to assemble the nanocrystals on the surface of TiO2. Moreover, these nanocrystals can be produced relatively easily via cost-effective solution-based synthetic methods and are composed of low-toxicity elements, which favors their integration into the market. This review describes the methods developed to prepare I-III-VI2 QDs (AgInS2 and CuInS2 were excluded) and control their optoelectronic properties to favor their integration into QDSSCs. Strategies developed to broaden the optoelectronic response and decrease the surface-defect states of QDs in order to promote the fast electron injection from QDs into TiO2 and achieve highly efficient QDSSCs will be described. Results show that heterostructures obtained after the sensitization of TiO2 with I-III-VI2 QDs could outperform those of other QDSSCs. The highest power-conversion efficiency (15.2%) was obtained for quinary Cu-In-Zn-Se-S QDs, along with a short-circuit density (JSC) of 26.30 mA·cm-2, an open-circuit voltage (VOC) of 802 mV and a fill factor (FF) of 71%.
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Affiliation(s)
- Shubham Shishodia
- Université de Lorraine, CNRS, LRGP, F-54000 Nancy, France; (S.S.); (B.C.)
- Université de Lorraine, CNRS, IJL, F-54000 Nancy, France;
| | - Bilel Chouchene
- Université de Lorraine, CNRS, LRGP, F-54000 Nancy, France; (S.S.); (B.C.)
| | - Thomas Gries
- Université de Lorraine, CNRS, IJL, F-54000 Nancy, France;
| | - Raphaël Schneider
- Université de Lorraine, CNRS, LRGP, F-54000 Nancy, France; (S.S.); (B.C.)
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Lee HJ, Im S, Jung D, Kim K, Chae JA, Lim J, Park JW, Shin D, Char K, Jeong BG, Park JS, Hwang E, Lee DC, Park YS, Song HJ, Chang JH, Bae WK. Coherent heteroepitaxial growth of I-III-VI 2 Ag(In,Ga)S 2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators. Nat Commun 2023; 14:3779. [PMID: 37355655 DOI: 10.1038/s41467-023-39509-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 06/14/2023] [Indexed: 06/26/2023] Open
Abstract
Colloidal Ag(In,Ga)S2 nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS2 (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA)2 complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).
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Affiliation(s)
- Hak June Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyuri Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doyoon Shin
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kookheon Char
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byeong Guk Jeong
- School of Chemical and Biomolecular Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Hyung-Jun Song
- Department of Safety Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
| | - Jun Hyuk Chang
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
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Yang L, Zhang S, Xu B, Jiang J, Cai B, Lv X, Zou Y, Fan Z, Yang H, Zeng H. I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes. NANO LETTERS 2023; 23:2443-2453. [PMID: 36964745 DOI: 10.1021/acs.nanolett.2c03138] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.
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Affiliation(s)
- Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shuai Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiangyuan Jiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bo Cai
- State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Xinyi Lv
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yousheng Zou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong China
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Adekoya JA, Chibuokem MO, Masikane S, Revaprasadu N. Heterostructures of Ag2FeSnS4 chalcogenide nanoparticles as potential photocatalysts. SCIENTIFIC AFRICAN 2023. [DOI: 10.1016/j.sciaf.2022.e01509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
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9
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Tomazett VK, Chacon G, Marin G, Castegnaro MV, das Chagas RP, Lião LM, Dupont J, Qadir MI. Ionic liquid confined spaces controlled catalytic CO2 cycloaddition of epoxides in BMIm.ZnCl3 and its supported ionic liquid phases. J CO2 UTIL 2023. [DOI: 10.1016/j.jcou.2023.102400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
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10
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Motomura G, Uematsu T, Kuwabata S, Kameyama T, Torimoto T, Tsuzuki T. Quantum-Dot Light-Emitting Diodes Exhibiting Narrow-Spectrum Green Electroluminescence by Using Ag-In-Ga-S/GaS x Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8336-8344. [PMID: 36732881 DOI: 10.1021/acsami.2c21232] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Quantum dots (QDs), which have high color purity, are expected to be applied as emitting materials to wide-color-gamut displays. To enable their use as an alternative to Cd-based QDs, it is necessary to improve the properties of QDs composed of low-toxicity materials. Although multielement QDs such as Ag-In-Ga-S are prone to spectrally broad emission from defect sites, a core/shell structure covered with a GaSx shell is expected to enable sharp emission from band-edge transitions. Here, QD light-emitting diodes (QD-LEDs) embedded with Ag-In-Ga-S/GaSx core/shell QDs (AIGS QDs) were fabricated, and their electroluminescence (EL) was observed. The EL spectra from the AIGS QD-LEDs were found to contain a large defect-related emission component not observed in the photoluminescence (PL) spectra of the AIGS QD films. This defect-related emission was caused by electrons injected into defect sites in the QDs. Therefore, the AIGS QDs and the electron injection layer (EIL) of ZnMgO were treated with Ga compounds such as gallium chloride (GaCl3) and gallium tris(N,N'-diethyldithiocarbamate) (Ga(DDTC)3) to improve the luminescence properties of the QD-LEDs. The added Ga compounds effectively compensated for defect sites on the surface of the QDs and suppressed direct electron injection from the EIL into defect sites. As a result, the defect-related emission components in the EL were successfully suppressed, and the EL exhibited a color purity comparable to the PL of the AIGS QD films. The QD-LEDs exhibited EL spectra with a full width at half-maximum of 33 nm, which is extremely sharp for a low-toxicity QD, and the chromaticity coordinates (0.260, 0.695) for green EL were achieved.
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Affiliation(s)
- Genichi Motomura
- Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo 157-8510, Japan
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Taro Uematsu
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Susumu Kuwabata
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Tatsuya Kameyama
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8603, Japan
| | - Tsukasa Torimoto
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8603, Japan
| | - Toshimitsu Tsuzuki
- Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo 157-8510, Japan
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11
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Tepakidareekul M, Uematsu T, Torimoto T, Kuwabata S. Encapsulation of AgInS 2/GaS x core/shell quantum dots in In-fumarate metal–organic frameworks for stability enhancement. CrystEngComm 2022. [DOI: 10.1039/d2ce00343k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Silver indium sulfide/gallium sulfide (AgInS2/GaSx) core/shell quantum dots (QDs), among the cadmium-free alternatives that possess a narrow band-edge emission, have attracted immense attention in recent years. However, the insufficient stability...
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