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Pawar KK, Kumar A, Mirzaei A, Kumar M, Kim HW, Kim SS. 2D nanomaterials for realization of flexible and wearable gas sensors: A review. CHEMOSPHERE 2024; 352:141234. [PMID: 38278446 DOI: 10.1016/j.chemosphere.2024.141234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 01/03/2024] [Accepted: 01/14/2024] [Indexed: 01/28/2024]
Abstract
Gas sensors are extensively employed for monitoring and detection of hazardous gases and vapors. Many of them are produced on rigid substrates, but flexible and wearable gas sensors are needed for intriguing usage including the internet of things (IoT) and medical devices. The materials with the greatest potential for the fabrication of flexible and wearable gas sensing devices are two-dimensional (2D) semiconducting nanomaterials, which consist of graphene and its substitutes, transition metal dichalcogenides, and MXenes. These types of materials have good mechanical flexibility, high charge carrier mobility, a large area of surface, an abundance of defects and dangling bonds, and, in certain instances adequate transparency and ease of synthesis. In this review, we have addressed the different 2D nonmaterial properties for gas sensing in the context of fabrication of flexible/wearable gas sensors. We have discussed the sensing performance of flexible/wearable gas sensors in various forms such as pristine, composite and noble metal decorated. We believe that content of this review paper is greatly useful for the researchers working in the research area of fabrication of flexible/wearable gas sensors.
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Affiliation(s)
- Krishna Kiran Pawar
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, South Korea; The Research Institute of Industrial Science, Hanyang University, Seoul, 04763, South Korea; School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, India
| | - Ashok Kumar
- Department of Electrical Engineering, Indian Institute of Technology, Jodhpur, 342030, India
| | - Ali Mirzaei
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz, 715557-13876, Iran
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology, Jodhpur, 342030, India; Department of Cybernetics, Nanotechnology and Data Processing, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100, Gliwice, Poland
| | - Hyoun Woo Kim
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, South Korea.
| | - Sang Sub Kim
- Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
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Luan S, Hu J, Ma M, Tian J, Liu D, Wang J, Wang J. The enhanced sensing properties of MOS-based resistive gas sensors by Au functionalization: a review. Dalton Trans 2023. [PMID: 37312618 DOI: 10.1039/d3dt01078c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Gas sensors are essential for detecting toxic gases that can harm social life or industrial production. Traditional metal oxide semiconductor (MOS)-based sensors suffer from shortcomings such as high operating temperature and slow response time, which limits their detection capabilities. Thus, there is a need to improve their performance. One useful technique is noble metal functionalization, which can effectively enhance the response/recovery time, sensitivity and selectivity, sensing response, and optimum operating temperature of MOS gas sensors. Among the noble metals, Au NPs are considered a promising material for forming composite sensing materials to achieve better sensing performance. This paper aims to review and discuss the recent research on Au-decorated MOS-based sensors, including Au/n-type MOS-based sensors, Au/p-type MOS-based sensors, Au/MOS/carbon composite materials, and Au/MOS/perovskite composite materials. The sensing mechanism of Au-functionalized MOS-based materials will also be examined.
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Affiliation(s)
- Sen Luan
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Jinhu Hu
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Mingliang Ma
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Jiale Tian
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Di Liu
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Jianyi Wang
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
| | - Jin Wang
- School of Civil Engineering, Qingdao University of Technology, Qingdao, 266520, Shandong, China.
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Wang Z, Dai J, Wang J, Li X, Pei C, Liu Y, Yan J, Wang L, Li S, Li H, Wang X, Huang X, Huang W. Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors. RESEARCH (WASHINGTON, D.C.) 2022; 2022:9767651. [PMID: 35935140 PMCID: PMC9275095 DOI: 10.34133/2022/9767651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Accepted: 05/24/2022] [Indexed: 11/06/2022]
Abstract
Most van der Waals two-dimensional (2D) materials without surface dangling bonds show limited surface activities except for their edge sites. Ultrathin Bi2Se3, a topological insulator that behaves metal-like under ambient conditions, has been overlooked on its surface activities. Herein, through a topochemical conversion process, ultrathin nanoporous Bi2Se3 layers were epitaxially deposited on BiOCl nanosheets with strong electronic coupling, leading to hybrid electronic states with further bandgap narrowing. Such oriented nanoporous Bi2Se3 layers possessed largely exposed active edge sites, along with improved surface roughness and film forming ability even on inkjet-printed flexible electrodes. Superior room-temperature NO2 sensing performance was achieved compared to other 2D materials under bent conditions. Our work demonstrates that creating nanoscale features in 2D materials through topochemical heteroepitaxy is promising to achieve both favorable electronic properties and surface activity toward practical applications.
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Affiliation(s)
- Zhiwei Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Jie Dai
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jian Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xinzhe Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chengjie Pei
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yanlei Liu
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jiaxu Yan
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Lin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Shaozhou Li
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Hai Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
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