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Theoretical prediction of two-dimensional BC 2X (X = N, P, As) monolayers: ab initio investigations. Sci Rep 2022; 12:22269. [PMID: 36564522 PMCID: PMC9789139 DOI: 10.1038/s41598-022-26805-8] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 12/20/2022] [Indexed: 12/24/2022] Open
Abstract
In this work, novel two-dimensional BC[Formula: see text]X (X = N, P, As) monolayers with X atoms out of the B-C plane, are predicted by means of the density functional theory. The structural, electronic, optical, photocatalytic and thermoelectric properties of the BC[Formula: see text]X monolayers have been investigated. Stability evaluation of the BC[Formula: see text]X single-layers is carried out by phonon dispersion, ab-initio molecular dynamics (AIMD) simulation, elastic stability, and cohesive energies study. The mechanical properties reveal all monolayers considered are stable and have brittle nature. The band structure calculations using the HSE06 functional reveal that the BC[Formula: see text]N, BC[Formula: see text]P and BC[Formula: see text]As are semiconducting monolayers with indirect bandgaps of 2.68 eV, 1.77 eV and 1.21 eV, respectively. The absorption spectra demonstrate large absorption coefficients of the BC[Formula: see text]X monolayers in the ultraviolet range of electromagnetic spectrum. Furthermore, we disclose the BC[Formula: see text]N and BC[Formula: see text]P monolayers are potentially good candidates for photocatalytic water splitting. The electrical conductivity of BC[Formula: see text]X is very small and slightly increases by raising the temperature. Electron doping may yield greater electric productivity of the studied monolayers than hole doping, as indicated by the larger power factor in the n-doped region compared to the p-type region. These results suggest that BC[Formula: see text]X (X = N, P, As) monolayers represent a new promising class of 2DMs for electronic, optical and energy conversion systems.
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Suzuki H, Miyazato I, Hussain T, Ersan F, Maeda S, Takahashi K. Designing two-dimensional dodecagonal boron nitride. CrystEngComm 2022. [DOI: 10.1039/d1ce01354h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two dimensional dodecagonal boron nitride.
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Affiliation(s)
- Hajime Suzuki
- Department of Chemistry, Hokkaido University, North 10, West 8, Sapporo 060-0810, Japan
| | - Itsuki Miyazato
- Department of Chemistry, Hokkaido University, North 10, West 8, Sapporo 060-0810, Japan
| | - Tanveer Hussain
- School of Chemical Engineering, The University of Queensland, St Lucia, Brisbane, QLD 4072, Australia
| | - Fatih Ersan
- Department of Physics, Aydin Adnan Menderes University, 09010 Aydin, Turkey
| | - Satoshi Maeda
- Department of Chemistry, Hokkaido University, North 10, West 8, Sapporo 060-0810, Japan
- Institute for Chemical Reaction Design and Discovery (WPI-ICReDD), Hokkaido University, Kita 21 Nishi 10, Kita-ku, Sapporo, Hokkaido 001-0021, Japan
| | - Keisuke Takahashi
- Department of Chemistry, Hokkaido University, North 10, West 8, Sapporo 060-0810, Japan
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Faraji M, Bafekry A, Fadlallah MM, Molaei F, Hieu NN, Qian P, Ghergherehchi M, Gogova D. Surface modification of titanium carbide MXene monolayers (Ti 2C and Ti 3C 2) via chalcogenide and halogenide atoms. Phys Chem Chem Phys 2021; 23:15319-15328. [PMID: 34254093 DOI: 10.1039/d1cp01788h] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C-O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.
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Affiliation(s)
- M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran. and Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - M M Fadlallah
- Department of Mining and Geological Engineering, University of Arizona, Tucson, USA
| | - F Molaei
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - N N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam and Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - P Qian
- Department of Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
| | - D Gogova
- Central Laboratory of Solar Energy and New Energy Sources at the Bulg. Acad. Sci., Blvd. Tzarigradsko shoes 72, 1784 Sofia, Bulgaria
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