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Nichterwitz M, Hiekel K, Wolf D, Eychmüller A, Leistner K. Voltage-Controlled ON-OFF-Switching of Magnetoresistance in FeO x/Fe/Au Aerogel Networks. ACS MATERIALS AU 2024; 4:55-64. [PMID: 38221921 PMCID: PMC10786128 DOI: 10.1021/acsmaterialsau.3c00045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 09/28/2023] [Accepted: 09/28/2023] [Indexed: 01/16/2024]
Abstract
Voltage control of magnetoresistance (MR) in nanoscale three-dimensional (3D) geometries is interesting from a fundamental point of view and a promising route toward novel sensors and energy-efficient computing schemes. Magneto-ionic mechanisms are favorable for low-voltage control of magnetism and room-temperature operation, but magneto-ionic control of MR has been studied only for planar geometries so far. We synthesize a 3D nanomaterial with magneto-ionic functionality by electrodepositing an iron hydroxide/iron coating on a porous nanoscale gold network (aerogel). To enable maximum magneto-ionic ON-OFF-switching, the thickness of the coating is adjusted to a few nanometers by a self-terminating electrodeposition process. In situ magnetotransport measurements during electrolytic gating of these nanostructures reveal large reversible changes in MR, including ON-OFF-switching of MR, with a small applied voltage difference (1.72 V). This effect is related to the electrochemical switching between a ferromagnetic iron shell/gold core nanostructure (negative MR at the reduction voltage) and an iron oxide shell/gold core nanostructure (negligible MR at the oxidation voltage).
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Affiliation(s)
- Martin Nichterwitz
- Electrochemical
Sensors and Energy Storage, Faculty of Natural Sciences, Institute of Chemistry, TU Chemnitz, Strasse der Nationen 62, Chemnitz 09111, Germany
- Leibniz
IFW Dresden, Helmholtzstrasse 20, Dresden 01069, Germany
| | - Karl Hiekel
- Physical
Chemistry, TU Dresden, Zellescher Weg 19, Dresden 01062, Germany
| | - Daniel Wolf
- Leibniz
IFW Dresden, Helmholtzstrasse 20, Dresden 01069, Germany
| | | | - Karin Leistner
- Electrochemical
Sensors and Energy Storage, Faculty of Natural Sciences, Institute of Chemistry, TU Chemnitz, Strasse der Nationen 62, Chemnitz 09111, Germany
- Leibniz
IFW Dresden, Helmholtzstrasse 20, Dresden 01069, Germany
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Marqués-Marchán J, Fernandez-Roldan JA, Bran C, Puttock R, Barton C, Moreno JA, Kosel J, Vazquez M, Kazakova O, Chubykalo-Fesenko O, Asenjo A. Distinguishing Local Demagnetization Contribution to the Magnetization Process in Multisegmented Nanowires. NANOMATERIALS 2022; 12:nano12121968. [PMID: 35745306 PMCID: PMC9229024 DOI: 10.3390/nano12121968] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Revised: 06/03/2022] [Accepted: 06/05/2022] [Indexed: 01/16/2023]
Abstract
Cylindrical magnetic nanowires are promising materials that have the potential to be used in a wide range of applications. The versatility of these nanostructures is based on the tunability of their magnetic properties, which is achieved by appropriately selecting their composition and morphology. In addition, stochastic behavior has attracted attention in the development of neuromorphic devices relying on probabilistic magnetization switching. Here, we present a study of the magnetization reversal process in multisegmented CoNi/Cu nanowires. Nonstandard 2D magnetic maps, recorded under an in-plane magnetic field, produce datasets that correlate with magnetoresistance measurements and micromagnetic simulations. From this process, the contribution of the individual segments to the demagnetization process can be distinguished. The results show that the magnetization reversal in these nanowires does not occur through a single Barkhausen jump, but rather by multistep switching, as individual CoNi segments in the NW undergo a magnetization reversal. The existence of vortex states is confirmed by their footprint in the magnetoresistance and 2D MFM maps. In addition, the stochasticity of the magnetization reversal is analysed. On the one hand, we observe different switching fields among the segments due to a slight variation in geometrical parameters or magnetic anisotropy. On the other hand, the stochasticity is observed in a series of repetitions of the magnetization reversal processes for the same NW under the same conditions.
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Affiliation(s)
- Jorge Marqués-Marchán
- Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid, Spain; (J.M.-M.); (C.B.); (M.V.); (O.C.-F.)
| | - Jose Angel Fernandez-Roldan
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany;
| | - Cristina Bran
- Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid, Spain; (J.M.-M.); (C.B.); (M.V.); (O.C.-F.)
| | - Robert Puttock
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK; (R.P.); (C.B.); (O.K.)
- Department of Physics, Royal Holloway University of London, Egham TW20 0EX, UK
| | - Craig Barton
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK; (R.P.); (C.B.); (O.K.)
| | - Julián A. Moreno
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia;
| | - Jürgen Kosel
- Computer Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia;
- Silicon Austria Labs, Sensor Systems Division, A-9524 Villach, Austria
| | - Manuel Vazquez
- Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid, Spain; (J.M.-M.); (C.B.); (M.V.); (O.C.-F.)
| | - Olga Kazakova
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK; (R.P.); (C.B.); (O.K.)
| | - Oksana Chubykalo-Fesenko
- Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid, Spain; (J.M.-M.); (C.B.); (M.V.); (O.C.-F.)
| | - Agustina Asenjo
- Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid, Spain; (J.M.-M.); (C.B.); (M.V.); (O.C.-F.)
- Correspondence:
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