The nonlinear optical transition bleaching in tellurene

Broad -band nonlinear optical response in Bi2Te0.6S2.4 alloys based on alloy engineering

Alloy engineering plays an important role in regulating the optoelectronic properties of materials. This work demonstrates that Bi2Te0.6S2.4 alloys can extend nonlinear optical response to the near-infrared range. Te alloying at S sites can narrow the band gap, as proved by density functional theory (DFT) calculations, leading to a broadband saturable absorption response ranging from ultraviolet (350 nm) to near-infrared (1100 nm) wavelength with negative nonlinear optical absorption coefficient ranging from -0.12 cm GW-1 to -1.28 cm GW-1. Moreover, the broadband carrier dynamic of Bi2Te0.6S2.4 alloys was investigated via femtosecond transient absorption (TA) at an excitation of 325 nm. A faster carrier dynamic at near-infrared wavelength was observed because of an increase in electron density at the conduction band minimum due to the additional Bi-Te interaction, which was corroborated by DFT calculations. These results suggest that alloy engineering provides an effective way for the development of broadband nonlinear optical devices.

External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles

Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.

Two-Dimensional Molybdenum Boride (MBene) Mo4/3B2Tx with Broadband and Termination-Dependent Ultrafast Nonlinear Optical Response

Two-dimensional molybdenum borides (MBenes) comprise a new class of 2D transition metal borides that exhibit potential photonics applications. Recently, the synthesis of individual single-layer Mo4/3B2Tx (T = O, F, OH) MBene sheets has been realized, which attracted considerable attention in optoelectronics. However, there is still a lack of understanding and regulation of the photophysical processes of Mo4/3B2Tx MBene. Here, we demonstrate that Mo4/3B2Tx MBene exhibits a surface termination-dependent electronic structure, carrier dynamics, and nonlinear optical response over a wide wavelength range (500-1550 nm). As prepared 2D Mo4/3B2F2 MBene possesses a semimetal material property that exhibits a shorter intraband scattering process (<100 ps) and a considerable nonlinear optical response at a broadband cover optical communication C band at 1550 nm. These thrilling results are confirmed theoretically and experimentally. The analysis of these results adds to the regulating and understanding of the basic photophysical processes, which is anticipated to be beneficial for the further design of MBene-based photonics and nanoelectronics devices.

Interfacial Charge Transfer for Enhancing Nonlinear Saturable Absorption in WS2/graphene Heterostructure

Interlayer charge-transfer (CT) in 2D atomically thin vertical stacks heterostructures offers an unparalleled new approach to regulation of device performance in optoelectronic and photonics applications. Despite the fact that the saturable absorption (SA) in 2D heterostructures involves highly efficient optical modulation in the space and time domain, the lack of explicit SA regulation mechanism at the nanoscale prevents this feature from realizing nanophotonic modulation. Here, the enhancement of SA response via CT in WS2/graphene vertical heterostructure is proposed and the related mechanism is demonstrated through simulations and experiments. Leveraging this mechanism, CT-induced SA enhancement can be expanded to a wide range of nonlinear optical modulation applications for 2D materials. The results suggest that CT between 2D heterostructures enables efficient nonlinear optical response regulation.

Origin of the Efficient Nonlinear Optical Response of Two-Dimensional Layered CuFeTe2 Nanosheets

Two-dimensional ternary transition metal chalcogenides (TMCs) have aroused great research interest owing to outstanding semiconducting properties and diverse magnetic response. CuFeTe₂, as a typical TMC, exhibits ambiguous magnetic behavior and ground state of spin density waves nature. Herein, we first report efficient nonlinear absorption and superior nonlinear refraction of CuFeTe₂ nanosheets. The nonlinear absorption and refraction coefficients reach -0.22 cm/GW and -1.66 × 10^-12 cm²/W, respectively. Semiempirical theory for direct bandgap semiconductors was applied to estimate the nonlinearities of CuFeTe₂ nanosheets. The calculation results indicate that the efficient nonlinearities stem from the free carrier induced band filling effect.

Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors

As with all stylish 2D functional materials, tellurene and tellurides possessing excellent physical and chemical properties such as high environmental stability, tunable narrow bandgap, and lower thermal conductivity, have aroused the great interest of the researchers. These properties of such materials also form the basis for relatively newfangled scholarly fields involving advanced topics, especially for broadband photodetectors. Integrating the excellent properties of many 2D materials, tellurene/telluride-based photodetectors show great flexibility, higher frequency response or faster time response, high signal-to-noise ratio, and so on, which make them leading the frontier of photodetector research. To fully understand the excellent properties of tellurene/tellurides and their optoelectronic applications, the recent advances in tellurene/telluride-based photodetectors are maximally summarized. Benefiting from the solid research in this field, the challenges and opportunities of tellurene/tellurides for future optoelectronic applications are also discussed in this review, which might provide possibilities for the realization of state-of-the-art high-performance tellurene/telluride-based devices.