InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

Aromatic and magnetic properties in a series of heavy rare earth-doped Ge6 cluster anions

A series of pentagonal bipyramidal anionic germanium clusters doped with heavy rare earth elements,REGe 6 - (RE = Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), have been identified at the PBE0/def2-TZVP level using density functional theory (DFT). Our findings reveal that the centrally doped pentagonal ring structure demonstrates enhanced stability and heightened aromaticity due to its uniform bonding characteristics and a larger charge transfer region. Through natural population analysis and spin density diagrams, we observed a monotonic decrease in the magnetic moment from Gd to Yb. This is attributed to the decreasing number of unpaired electrons in the 4f orbitals of the heavy rare earth atoms. Interestingly, the system doped with Er atoms showed lower stability and anti-aromaticity, likely due to the involvement of the 4f orbitals in bonding. Conversely, the systems doped with Gd and Tb atoms stood out for their high magnetism and stability, making them potential building blocks for rare earth-doped semiconductor materials.

Two-Dimensional Van Der Waals Thin Film and Device

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications

With rapid and continuous consumption of nonrenewable energy, solar energy can be utilized to meet the energy requirement and mitigate environmental issues in the future. To attain a sustainable society with an energy mix predominately dependent on solar energy, photoelectrochemical (PEC) device, in which semiconductor nanostructure-based photocatalysts play important roles, is considered to be one of the most promising candidates to realize the sufficient utilization of solar energy in a low-cost, green, and environmentally friendly manner. Interface engineering of semiconductor nanostructures has been qualified in the efficient improvement of PEC performances including three basic steps, i.e., light absorption, charge transfer/separation, and surface catalytic reaction. In this review, recently developed interface engineering of semiconductor nanostructures for direct and high-efficiency conversion of sunlight into available forms (e.g., chemical fuels and electric power) are summarized in terms of their atomic constitution and morphology, electronic structure and promising potential for PEC applications. Extensive efforts toward the development of high-performance PEC applications (e.g., PEC water splitting, PEC photodetection, PEC catalysis, PEC degradation and PEC biosensors) are also presented and appraised. Last but not least, a brief summary and personal insights on the challenges and future directions in the community of next-generation PEC devices are also provided.

Ultrathin CuBi2O4 on a bipolar Bi2O3 nano-scaffold: a self-powered broadband photoelectrochemical photodetector with improved responsivity and response speed

CuBi₂O₄ is a promising photoactive material for photoelectrochemical (PEC) broadband photodetectors due to its suitable band structure, but its photo-responsivity is severely limited by the short carrier diffusion length and long light penetration depth. To address the trade-off between light absorption and charge separation, a nano-structured bipolar Bi₂O₃ host scaffold was coupled with an ultrathin CuBi₂O₄ light absorbing layer to construct a host-guest Bi₂O₃/CuBi₂O₄ photocathode. The work function of the bipolar Bi₂O₃ scaffold lies in between FTO and CuBi₂O₄, making Bi₂O₃ a suitable back contact layer for hole transport. Compared with the flat CuBi₂O₄ and Bi₂O₃ scaffold counterpart, the nanostructured Bi₂O₃/CuBi₂O₄ exhibits significantly improved light absorption and enhanced charge separation efficiency. The Bi₂O₃/CuBi₂O₄ PEC photodetector can be self-powered and demonstrates a broad photo-response ranging from ultraviolet (UV) to near infrared (NIR). It shows a high responsivity of 75 mA W^-1 and a remarkable short response time of 0.18 ms/0.19 ms. Bi₂O₃/CuBi₂O₄ prepared by magnetron sputtering demonstrates great potential for rapid PEC photodetection in a wide optical domain.

A New, Thorough Look on Unusual and Neglected Group III-VI Compounds Toward Novel Perusals

The attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices, among which a great deal is offered from layered structures. Studies on aluminium chalcogenides show interesting potential as anodes in batteries and as semiconductors. Thallium (Tl), which is commonly present in the +1 oxidation state, is one of the key components in ternary chalcogenides. However, binary Tl-Q (Q = S, Se, Te) systems and derived films are still studied for their semiconducting and thermoelectric properties. This review aims to summarize the biggest features of these unusual materials and to shed some new light on them with the perspective that in the future, novel studies can revive these compounds in order to give rise to a new generation of technology.

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Van der Waals heterostructures have great potential for the emerging self-powered photoelectrochemical photodetectors due to their outstanding photoelectric conversion capability and efficient interfacial carrier transportation. By considering the band alignment, structural design, and growth optimization, the heterostructures of vertically oriented SnS₂ with different densities on MoS₂ nanosheets are designed and fabricated using a two-step epitaxial growth method. Compared with SnS₂, MoS₂, and low density-vertical SnS₂/MoS₂ heterostructure, the high density-vertical SnS₂/MoS₂ heterostructure exhibits largely enhanced self-powered photodetection performances, such as a giant photocurrent density (∼932.8 μA cm^-2), an excellent photoresponsivity (4.66 mA W^-1), and an ultrafast response/recovery time (3.6/6.4 ms) in the ultraviolet-visible range. This impressive enhancement of high density-vertical SnS₂/MoS₂ photodetectors is mainly ascribed to the essentially improved charge transfer and carrier transport of type-II band alignment heterostructures and the efficient light absorption from the unique light-trapping structure. In addition, the photoelectrocatalytic water splitting performance of the high density-vertical SnS₂/MoS₂ heterostructure also benefits from the type-II band alignment and the light-trapping structure. This work provides valuable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical devices with improved performance by the morphology and heterostructure design.