Nucleation of diamond films on heterogeneous substrates: a review

Interface Modulation for the Heterointegration of Diamond on Si

Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si-based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, the microwave plasma chemical vapor deposition (MPCVD) method is utilized to synthesize large-scale diamond films on a Si substrate, while distinct structures appear at the Si-diamond interface. Investigation of the formation mechanisms and modulation strategies of the interface is crucial to optimize the heat dissipation behaviors. By taking advantage of electron microscopy, the formation of the epitaxial β-SiC interlayer is found to be caused by the interaction between the anisotropically sputtered Si and the deposited amorphous carbon. Compared with the randomly oriented β-SiC interlayer, larger diamond grain sizes can be obtained on the epitaxial β-SiC interlayer under the same synthesis condition. Moreover, due to the competitive interfacial reactions, the epitaxial β-SiC interlayer thickness can be reduced by increasing the CH4/H2 ratio (from 3% to 10%), while further increase in the ratio (to 20%) can lead to the broken of the epitaxial relationship. The above findings are expected to provide interfacial design strategies for multiple large-scale diamond applications.

Optical Pump-Terahertz Probe Diagnostics of the Carrier Dynamics in Diamonds

Diamond is a promising material for terahertz applications. In this work, we use a non-invasive optical pump-terahertz probe method to experimentally study the photoinduced carrier dynamics in doped diamond monocrystals and a new diamond-silicon composite. The chemical vapor deposited diamond substrate with embedded silicon microparticles showed two photoinduced carrier lifetimes (short lifetime on the order of 4 ps and long lifetime on the order of 200 ps). The short lifetime is several times less than in boron-doped diamonds and nitrogen-doped diamonds which were grown using a high temperature-high pressure technique. The observed phenomenon is explained by the transport of photoexcited carriers across the silicon-diamond interface, resulting in dual relaxation dynamics. The observed phenomenon could be used for ultrafast flexible terahertz modulation.

Inkjet Printing-Manufactured Boron-Doped Diamond Chip Electrodes for Electrochemical Sensing Purposes

Fabrication of patterned boron-doped diamond (BDD) in an inexpensive and straightforward way is required for a variety of practical applications, including the development of BDD-based electrochemical sensors. This work describes a simplified and novel bottom-up fabrication approach for BDD-based three-electrode sensor chips utilizing direct inkjet printing of diamond nanoparticles on silicon-based substrates. The whole seeding process, accomplished by a commercial research inkjet printer with piezo-driven drop-on-demand printheads, was systematically examined. Optimized and continuous inkjet-printed features were obtained with glycerol-based diamond ink (0.4% vol/wt), silicon substrates pretreated by exposure to oxygen plasma and subsequently to air, and applying a dot density of 750 drops (volume 9 pL) per inch. Next, the dried micropatterned substrate was subjected to a chemical vapor deposition step to grow uniform thin-film BDD, which satisfied the function of both working and counter electrodes. Silver was inkjet-printed to complete the sensor chip with a reference electrode. Scanning electron micrographs showed a closed BDD layer with a typical polycrystalline structure and sharp and well-defined edges. Very good homogeneity in diamond layer composition and a high boron content (∼2 × 1021 atoms cm-3) was confirmed by Raman spectroscopy. Important electrochemical characteristics, including the width of the potential window (2.5 V) and double-layer capacitance (27 μF cm-2), were evaluated by cyclic voltammetry. Fast electron transfer kinetics was recognized for the [Ru(NH3)6]3+/2+ redox marker due to the high doping level, while somewhat hindered kinetics was observed for the surface-sensitive [Fe(CN)6]3-/4- probe. Furthermore, the ability to electrochemically detect organic compounds of different structural motifs, such as glucose, ascorbic acid, uric acid, tyrosine, and dopamine, was successfully verified and compared with commercially available screen-printed BDD electrodes. The newly developed chip-based manufacture method enables the rapid prototyping of different small-scale electrode designs and BDD microstructures, which can lead to enhanced sensor performance with capability of repeated use.

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

The high thermal conductivity of polycrystalline diamond makes it ideally suited for thermal management solutions for gallium nitride (GaN) devices, with a diamond layer grown on an aluminum nitride (AlN) interlayer atop the GaN stack. However, this application is limited by the thermal barrier at the interface between diamond and substrate, which has been associated with the transition region formed in the initial phases of growth. In this work, in situ spectroscopic ellipsometry (SE) is employed to monitor early-stage microwave plasma-enhanced chemical vapor deposition diamond growth on AlN. An optical model was developed from ex situ spectra and applied to spectra taken in situ during growth. Coalescence of separate islands into a single film was marked by a reduction in bulk void fraction prior to a spike in sp2 fraction due to grain boundary formation. Parameters determined by the SE model were corroborated using Raman spectroscopy and atomic force microscopy.

Microporous poly- and monocrystalline diamond films produced from chemical vapor deposited diamond-germanium composites

We report on a novel method for porous diamond fabrication, which is based on the synthesis of diamond-germanium composite films followed by etching of the Ge component. The composites were grown by microwave plasma assisted CVD in CH₄-H₂-GeH₄ mixtures on (100) silicon, and microcrystalline- and single-crystal diamond substrates. The structure and the phase composition of the films before and after etching were analyzed with scanning electron microscopy and Raman spectroscopy. The films revealed a bright emission of GeV color centers due to diamond doping with Ge, as evidenced by photoluminescence spectroscopy. The possible applications of the porous diamond films include thermal management, surfaces with superhydrophobic properties, chromatography, supercapacitors, etc.

Synthesis of Y3Al5O12:Ce Powders for X-ray Luminescent Diamond Composites

A concentration series of Y3Al5O12:Ce solid solutions were prepared, and the composition demonstrating the highest X-ray luminescence intensity of cerium was identified. Based on the best composition, a series of luminescent diamond–Y3Al5O12:Ce composite films were synthesized using microwave plasma-assisted chemical vapor deposition (CVD) in methane–hydrogen gas mixtures. Variations in the amounts of the embedded Y3Al5O12:Ce powders allowed for the fine-tuning of the luminescence intensity of the composite films.

Preferentially oriented growth of diamond films on silicon with nickel interlayer

Abstract

A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to form nickel silicides with crystal structure depending on temperature. The HFCVD diamond film with Ni interlayer results in reduced non-diamond carbon, low surface roughness, high diamond crystal quality, and increased texturing relative to growth on bare silicon wafers. X-ray diffraction results show that the diamond film grown with 10 nm Ni interlayer yielded 92.5% of the diamond grains oriented along the (110) crystal planes with ~ 2.5 µm thickness and large average grain size ~ 1.45 µm based on scanning electron microscopy. Texture is also observed to develop for ~ 300 nm thick diamond films with ~ 89.0% of the grains oriented along the (110) crystal plane direction. These results are significantly better than diamond grown on Si (111) without Ni layer with the same HFCVD conditions. The oriented growth of diamond film on Ni interlayers is explained by a proposed model wherein the nano-diamond seeds becoming oriented relative to the β1-Ni3Si that forms during the diamond nucleation period. The model also explains the silicidation and diamond growth processes.

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