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Chen CY, Moore SL, Maiti R, Ginsberg JS, Jadidi MM, Li B, Chae SH, Rajendran A, Patwardhan GN, Watanabe K, Taniguchi T, Hone J, Basov DN, Gaeta AL. Unzipping hBN with ultrashort mid-infrared pulses. SCIENCE ADVANCES 2024; 10:eadi3653. [PMID: 38691599 PMCID: PMC11062566 DOI: 10.1126/sciadv.adi3653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 03/27/2024] [Indexed: 05/03/2024]
Abstract
Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon "unzipping" to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.
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Affiliation(s)
- Cecilia Y. Chen
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
| | - Samuel L. Moore
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Rishi Maiti
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
- Department of Physics, Indian Institute of Technology Guwahati, Assam 781039, India
| | - Jared S. Ginsberg
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - M. Mehdi Jadidi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - Baichang Li
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - Sang Hoon Chae
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Anjaly Rajendran
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
| | - Gauri N. Patwardhan
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - D. N. Basov
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Alexander L. Gaeta
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
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Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
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Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
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Jang J, Jeong M, Lee J, Kim S, Yun H, Rho J. Planar Optical Cavities Hybridized with Low-Dimensional Light-Emitting Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203889. [PMID: 35861661 DOI: 10.1002/adma.202203889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Low-dimensional light-emitting materials have been actively investigated due to their unprecedented optical and optoelectronic properties that are not observed in their bulk forms. However, the emission from low-dimensional light-emitting materials is generally weak and difficult to use in nanophotonic devices without being amplified and engineered by optical cavities. Along with studies on various planar optical cavities over the last decade, the physics of cavity-emitter interactions as well as various integration methods are investigated deeply. These integrations not only enhance the light-matter interaction of the emitters, but also provide opportunities for realizing nanophotonic devices based on the new physics allowed by low-dimensional emitters. In this review, the fundamentals, strengths and weaknesses of various planar optical resonators are first provided. Then, commonly used low-dimensional light-emitting materials such as 0D emitters (quantum dots and upconversion nanoparticles) and 2D emitters (transition-metal dichalcogenide and hexagonal boron nitride) are discussed. The integration of these emitters and cavities and the expect interplay between them are explained in the following chapters. Finally, a comprehensive discussion and outlook of nanoscale cavity-emitter integrated systems is provided.
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Affiliation(s)
- Jaehyuck Jang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Minsu Jeong
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jihae Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seokwoo Kim
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huichang Yun
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Junsuk Rho
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Center for Flat Optics and Metaphotonics, Pohang, 37673, Republic of Korea
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Topographic Orientation of Scaffolds for Tissue Regeneration: Recent Advances in Biomaterial Design and Applications. Biomimetics (Basel) 2022; 7:biomimetics7030131. [PMID: 36134935 PMCID: PMC9496066 DOI: 10.3390/biomimetics7030131] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 08/30/2022] [Accepted: 09/08/2022] [Indexed: 11/17/2022] Open
Abstract
Tissue engineering to develop alternatives for the maintenance, restoration, or enhancement of injured tissues and organs is gaining more and more attention. In tissue engineering, the scaffold used is one of the most critical elements. Its characteristics are expected to mimic the native extracellular matrix and its unique topographical structures. Recently, the topographies of scaffolds have received increasing attention, not least because different topographies, such as aligned and random, have different repair effects on various tissues. In this review, we have focused on various technologies (electrospinning, directional freeze-drying, magnetic freeze-casting, etching, and 3-D printing) to fabricate scaffolds with different topographic orientations, as well as discussed the physicochemical (mechanical properties, porosity, hydrophilicity, and degradation) and biological properties (morphology, distribution, adhesion, proliferation, and migration) of different topographies. Subsequently, we have compiled the effect of scaffold orientation on the regeneration of vessels, skin, neural tissue, bone, articular cartilage, ligaments, tendons, cardiac tissue, corneas, skeletal muscle, and smooth muscle. The compiled information in this review will facilitate the future development of optimal topographical scaffolds for the regeneration of certain tissues. In the majority of tissues, aligned scaffolds are more suitable than random scaffolds for tissue repair and regeneration. The underlying mechanism explaining the various effects of aligned and random orientation might be the differences in “contact guidance”, which stimulate certain biological responses in cells.
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Ghoshal T, Thorat A, Prochukhan N, Morris MA. Fabrication of Dimensional and Structural Controlled Open Pore, Mesoporous Silica Topographies on a Substrate. NANOMATERIALS 2022; 12:nano12132223. [PMID: 35808059 PMCID: PMC9268633 DOI: 10.3390/nano12132223] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2022] [Revised: 06/23/2022] [Accepted: 06/27/2022] [Indexed: 12/04/2022]
Abstract
Open pore mesoporous silica (MPS) thin films and channels were prepared on a substrate surface. The pore dimension, thickness and ordering of the MPS thin films were controlled by using different concentrations of the precursor and molecular weight of the pluronics. Spectroscopic and microscopic techniques were utilized to determine the alignment and ordering of the pores. Further, MPS channels on a substrate surface were fabricated using commercial available lithographic etch masks followed by an inductively coupled plasma (ICP) etch. Attempts were made to shrink the channel dimension by using a block copolymer (BCP) hard mask methodology. In this regard, polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block copolymer (BCP) thin film forming perpendicularly oriented PEO cylinders in a PS matrix after microphase separation through solvent annealing was used as a structural template. An insitu hard mask methodology was applied which selectively incorporate the metal ions into the PEO microdomains followed by UV/Ozone treatment to generate the iron oxide hard mask nanopatterns. The aspect ratio of the MPS nanochannels can be varied by altering etching time without altering their shape. The MPS nanochannels exhibited good coverage across the entire substrate and allowed direct access to the pore structures.
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Affiliation(s)
- Tandra Ghoshal
- Correspondence: (T.G.); (M.A.M.); Tel./Fax: +353-1-896-3089 (M.A.M.)
| | | | | | - Michael A. Morris
- Correspondence: (T.G.); (M.A.M.); Tel./Fax: +353-1-896-3089 (M.A.M.)
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