Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer

Tuning the electronic properties of asymmetric YZrCOF MXene for water splitting applications: an ab initio study

Identifying and evaluating novel and extremely stable materials for catalysis is one of the major challenges that mankind faces today to rapidly reduce the dependence on fossil fuels. To contribute to achieving this goal, we have evaluated within the density-functional framework the properties of a new two-dimensional MXene structure, the asymmetric MXene YZrCOF monolayer. Phonon dispersion calculations at 0 K and 300 K indicate that the studied material is dynamically stable. The calculations also indicate that the material has a rigid crystal structure with a wide band gap, a strong potential difference, and a band-gap alignment that favors the production of both H2 and O2 molecules from water splitting. We also report the outcome of the strain effect on the electrical and photocatalytic characteristics of the studied material. We will demonstrate that even under a large strain, the YZrCOF monolayer is stable and useful for photocatalytic applications.

Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation

The shape of energy dispersions near the band-edges plays a decisive role in the transport properties, especially the carrier mobility, of semiconductors. In this work, we design and investigate the γ phase of tin monoxide and monochalcogenides γ-SnX (X = O, S, Se, and Te) through first-principles simulations. γ-SnX is found to be dynamically stable with phonon dispersions containing only positive phonon frequencies. Due to the hexagonal atomic lattice, the mechanical properties of γ-SnX single-layers are directionally isotropic and their elastic constants meet Born's criterion for mechanical stability. Our calculation results indicate that all four single-layers of γ-SnX are semiconductors with the Mexican-hat dispersions. The biaxial strain not only greatly changes the electronic structures of the γ-SnX single-layers, but also can cause a phase transition from semiconductor to metal. Meanwhile, the effects of an electric field on the electron states of γ-SnX single-layers are insignificant. γ-SnX structures have high electron mobility and their electron mobility is highly directional isotropic along the two transport directions x and y. The findings not only initially introduce the γ phase of group IV-VI compounds, but also serve as a premise for further studies on this material family with potential applications in the future, both theoretically and experimentally.

Rashba-type spin splitting and transport properties of novel Janus $X$WGeN$_2$ ($X =$ O, S, Se, Te) monolayers

We propose and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers $X$WGeN$_2$ ($X =$ O, S, Se, Te) using {\it ab-initio} density functional theory. All four monolayers...