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Bharti DK, Verma R, Rani S, Agarwal D, Mehra S, Gangwar AK, Gupta BK, Singh N, Srivastava AK. Synthesis and Characterization of Highly Crystalline Bi-Functional Mn-Doped Zn 2SiO 4 Nanostructures by Low-Cost Sol-Gel Process. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:538. [PMID: 36770499 PMCID: PMC9921793 DOI: 10.3390/nano13030538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Revised: 12/28/2022] [Accepted: 01/23/2023] [Indexed: 06/18/2023]
Abstract
Herein, we demonstrate a process for the synthesis of a highly crystalline bi-functional manganese (Mn)-doped zinc silicate (Zn2SiO4) nanostructures using a low-cost sol-gel route followed by solid state reaction method. Structural and morphological characterizations of Mn-doped Zn2SiO4 with variable doping concentration of 0.03, 0.05, 0.1, 0.2, 0.5, 1.0, and 2.0 wt% were investigated by using X-ray diffraction and high-resolution transmission electron microscopy (HR-TEM) techniques. HR-TEM-assisted elemental mapping of the as-grown sample was conducted to confirm the presence of Mn in Zn2SiO4. Photoluminescence (PL) spectra indicated that the Mn-doped Zn2SiO4 nanostructures exhibited strong green emission at 521 nm under 259 nm excitation wavelengths. It was observed that PL intensity increased with the increase of Mn-doping concentration in Zn2SiO4 nanostructures, with no change in emission peak position. Furthermore, magnetism in doped Zn2SiO4 nanostructures was probed by static DC magnetization measurement. The observed photoluminescence and magnetic properties in Mn-doped Zn2SiO4 nanostructures are discussed in terms of structural defect/lattice strain caused by Mn doping and the Jahn-Teller effect. These bi-functional properties of as-synthesized Zn2SiO4 nanostructures provide a new platform for their potential applications towards magneto-optical and spintronic and devices areas.
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Affiliation(s)
- Dhiraj Kumar Bharti
- Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi 110016, India
- CSIR—Advanced Materials and Processes Research Institute, Bhopal 462026, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR—National Physical Laboratory, New Delhi 110012, India
| | - Rajni Verma
- School of Physics, The University of Melbourne, Parkville, VIC 3010, Australia
| | - Sonam Rani
- CSIR—National Physical Laboratory, New Delhi 110012, India
| | - Daksh Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
- Lam Research Corporation, Fremont, CA 94538, USA
| | - Sonali Mehra
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR—National Physical Laboratory, New Delhi 110012, India
| | | | - Bipin Kumar Gupta
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR—National Physical Laboratory, New Delhi 110012, India
| | - Nidhi Singh
- CSIR—National Physical Laboratory, New Delhi 110012, India
| | - Avanish Kumar Srivastava
- CSIR—Advanced Materials and Processes Research Institute, Bhopal 462026, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
- CSIR—National Physical Laboratory, New Delhi 110012, India
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