An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP2S6. Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu+ ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.

Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge

A van der Waals (vdW) α-In2Se3 ferroelectric semiconductor channel-based field-effect transistor (FeS-FET) has emerged as a next-generation electronic device owing to its versatility in various fields, including neuromorphic computing, nonvolatile memory, and optoelectronics. However, screening charges cause by the imperfect surface morphology of vdW α-In2Se3 inhibiting electrical polarization remain an unresolved issue. In this study, for the first time, a method is elucidated to recover the inherent electric polarization in both in- and out-of-plane directions of the α-In2Se3 channel based on post-exfoliation annealing (PEA) and improve the electrical performance of vdW FeS-FETs. Following PEA, an ultra-thin In2Se3-3xO3x layer formed on the top surface of the α-In2Se3 channel is demonstrated to passivate surface defects and enhance the electrical performance of FeS-FETs. The on/off current ratio of the α-In2Se3 FeS-FET has increased from 5.99 to 1.84 × 106, and the magnitude of ferroelectric resistance switching has increased from 1.20 to 26.01. Moreover, the gate-modulated artificial synaptic operation of the α-In2Se3 FeS-FET is demonstrated and illustrate the significance of the engineered interface in the vdW FeS-FET for its application to multifunctional devices. The proposed α-In2Se3 FeS-FET is expected to provide a significant breakthrough for advanced memory devices and neuromorphic computing.

Opto-Electrochemical Synaptic Memory in Supramolecularly Engineered Janus 2D MoS2

Artificial synapses combining multiple yet independent signal processing strategies in a single device are key enabler to achieve high-density of integration, energy efficiency, and fast data manipulation in brain-like computing. By taming functional complexity, the use of hybrids comprising multiple materials as active components in synaptic devices represents a powerful route to encode both short-term potentiation (STP) and long-term potentiation (LTP) in synaptic circuitries. To meet such a grand challenge, herein a novel Janus 2D material is developed by dressing asymmetrically the two surfaces of 2D molybdenum disulfide (MoS2 ) with an electrochemically-switchable ferrocene (Fc)/ ferrocenium (Fc+ ) redox couple and an optically-responsive photochromic azobenzene (Azo). Upon varying the magnitude of the electrochemical stimulus, it is possible to steer the transition between STP and LTP, thereby either triggering electrochemical doping of Fc/Fc+  pair on MoS2  or controlling an adsorption/desorption process of such redox species on MoS2 . In addition, a lower magnitude LTP is recorded by activating the photoisomerization of azobenzene chemisorbed molecules and therefore modulating the dipole-induced doping of the 2D semiconductor. Significantly, the interplay of electrochemical and optical stimuli makes it possible to construct artificial synapses where LTP can be boosted to 4-bit (16 memory states) while simultaneously functioning as STP.

Ferroelectric Organic Semiconductor: [1]Benzothieno[3,2-b][1]benzothiophene-Bearing Hydrogen-Bonding -CONHC14H29 Chain

An alkylamide-substituted [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative of BTBT-CONHC14H29 (1) and C8H17-BTBT-CONHC14H29 (2) were prepared to design the multifunctional organic materials, which can show both ferroelectric and semiconducting properties. Single-crystal X-ray structural analyses of short-chain (-CONHC3H7) derivatives revealed the coexistence of two-dimensional (2D) electronic band structures brought from a herringbone arrangement of the BTBT π core and the one-dimensional (1D) hydrogen-bonding chains of -CONHC3H7 chains. The thin films of 1 and 2 fabricated on the Si/SiO2 substrate surface have monolayer and bilayer structures, respectively, resulting in conducting layers parallel to the substrate surface, which is suitable for a channel layer of organic field-effect transistors (OFETs). The thin film of 1 indicated a hole mobility μFET = 2.4 × 10-5 cm2 V-1 s-1 and threshold voltage VTh = - 29 V, whereas that of 2 showed a μFET = 2.1 × 10-2 cm2 V-1 s-1 and threshold voltage VTh = -9.7 V. Both 1 and 2 formed the smectic E (SmE) phase above 410 and 369 K, respectively, where the existence of a hole transport pathway was confirmed in the SmE phase. The ferroelectric hysteresis behavior was observed in bulk 1 and 2 in the polarization-electric field (P-E) curves at the SmE phase. 1 showed the remanent polarization Pr = 2.3 μC cm-2 and coercive electric field Ec = 5.2 V μm-1, whereas the Pr and Ec of 2 were 3.4 μC cm-2 and 7.0 V μm-1 at the conditions of 453 K and 1 Hz. Introduction of alkylamide units into the BTBT π core has the potential to develop the external stimulus-responsive organic semiconductors brought from both ferroelectricity and semiconducting properties.

Artificial Neuron Devices

Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.

Operating region-dependent characteristics of weight updates in synaptic In-Ga-Zn-O thin-film transistors

We present a study on characteristics of operating region-dependent weight updates in a synaptic thin-film transistor (Syn-TFT) with an amorphous In-Ga-Zn-O (IGZO) channel layer. For a synaptic behavior (e.g. a memory phenomenon) of the IGZO TFT, a defective oxide (e.g. SiO₂) is intentionally used for a charge trapping due to programming pulses to the gate terminal. Based on this synaptic behavior, a conductance of the Syn-TFT is modulated depending on the programming pulses, thus weight updates. This weight update characteristics of the Syn-TFT is analyzed in terms of a dynamic ratio (dr_w) for two operating regions (i.e. the above-threshold and sub-threshold regimes). Here, the operating region is chosen depending on the level of the gate read-voltage relative to the threshold voltage of the Syn-TFT. To verify these, the static and pulsed characteristics of the fabricated Syn-TFT are monitored experimentally. As experimental results, it is found that the dr_w of the sub-threshold regime is larger compared to the above-threshold regime. In addition, the weight linearity in the sub-threshold regime is observed to be better compared to the above-threshold regime. Since it is expected that either the dr_w or weight linearity can affect performances (e.g. a classification accuracy) of an analog accelerator (AA) constructed with the Syn-TFTs, the AA simulation is performed to check this with a crossbar simulator.

Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics

Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing

Two-dimensional (2D) layered materials have attracted intensive attention in recent years due to their rich physical properties, and shown great promise due to their low power consumption and high integration density in integrated electronics. However, mostly limited to mechanical exfoliation, large scale preparation of the 2D materials for application is still challenging. Herein, quasi-2D α-molybdenum oxide (α-MoO3) thin film with an area larger than 100 cm2 was fabricated by magnetron sputtering, which is compatible with modern semiconductor industry. An all-solid-state synaptic transistor based on this α-MoO3 thin film is designed and fabricated. Interestingly, by proton intercalation/deintercalation, the α-MoO3 channel shows a reversible conductance modulation of about four orders. Several indispensable synaptic behaviors, such as potentiation/depression and short-term/long-term plasticity, are successfully demonstrated in this synaptic device. In addition, multilevel data storage has been achieved. Supervised pattern recognition with high recognition accuracy is demonstrated in a three-layer artificial neural network constructed on this α-MoO3 based synaptic transistor. This work can pave the way for large scale production of the α-MoO3 thin film for practical application in intelligent devices.