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Patel M, Park HH, Bhatnagar P, Kumar N, Lee J, Kim J. Transparent integrated pyroelectric-photovoltaic structure for photo-thermo hybrid power generation. Nat Commun 2024; 15:3466. [PMID: 38658539 DOI: 10.1038/s41467-024-47483-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Accepted: 04/02/2024] [Indexed: 04/26/2024] Open
Abstract
Thermal losses in photoelectric devices limit their energy conversion efficiency, and cyclic input of energy coupled with pyroelectricity can overcome this limit. Here, incorporating a pyroelectric absorber into a photovoltaic heterostructure device enables efficient electricity generation by leveraging spontaneous polarization based on pulsed light-induced thermal changes. The proposed pyroelectric-photovoltaic device outperforms traditional photovoltaic devices by 2.5 times due to the long-range electric field that occurs under pulse illumination. Optimization of parameters such as pulse frequency, scan speed, and illumination wavelength enhances power harvesting, as demonstrated by a power conversion efficiency of 11.9% and an incident-photon-to-current conversion efficiency of 200% under optimized conditions. This breakthrough enables reconfigurable electrostatic devices and presents an opportunity to accelerate technology that surpasses conventional limits in energy generation.
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Affiliation(s)
- Malkeshkumar Patel
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of South Korea
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon, 22012, Republic of South Korea
| | - Hyeong-Ho Park
- Optical Device Lab., Device Technology Division, Korea Advanced Nanofab Center (KANC), 109 Gwanggyo-ro, Yeongtong-gu, Suwon, 16229, Republic of South Korea
| | - Priyanka Bhatnagar
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of South Korea
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon, 22012, Republic of South Korea
| | - Naveen Kumar
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of South Korea
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon, 22012, Republic of South Korea
| | - Junsik Lee
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of South Korea
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon, 22012, Republic of South Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of South Korea.
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon, 22012, Republic of South Korea.
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Chen HR, Wan M, Li ZM, Zhong WH, Ye SY, Jia QQ, Li JY, Chen LZ. Precise Design of Molecular Ferroelectrics with High TC and Tunable Band Gap by Molecular Modification. Inorg Chem 2023. [PMID: 37463296 DOI: 10.1021/acs.inorgchem.3c01497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Molecular ferroelectric materials are widely applied in piezoelectric converters, non-volatile memorizers, and photovoltaic devices due to their advantages of adjustable structure, lightweight, easy processing, and environmental friendliness. However, designing multifunctional molecular ferroelectrics with excellent properties has always been a great challenge. Herein, a multiaxial molecular ferroelectric is successfully designed by modifying the quasi-spherical cation dabco with CuBr2 to obtain halogenated [Bretdabco]CuBr4 (Bretdabco = N-bromoethyl-N'-diazabicyclo [2.2.2]octane), which crystallizes in polar point groups (C6). Typical ferroelectric behaviors featured by the P-E hysteresis loop and switched ferroelectric domain are exhibited. Notably, the molecular ferroelectric shows a high TC of 460 K, which is rare in the field and could greatly expand the application range of this material. In addition, the band gap is adjustable through the regulation of halogen. Both the UV absorption spectra and theoretical calculations indicate that the molecular ferroelectrics belong to a direct band gap (2.14 eV) semiconductor. This tunable and narrow band gap semiconductor molecular ferroelectric material with high TC can be utilized more effectively in the study of optoelectronics and sensors, including piezoelectric energy harvesters. This research may provide a promising approach for the development of multiaxial molecular ferroelectrics with a tiny band gap and high TC.
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Affiliation(s)
- Hao-Ran Chen
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Min Wan
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Zi-Mu Li
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Wen-He Zhong
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Si-Yu Ye
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Qiang-Qiang Jia
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Jun-Yi Li
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
| | - Li-Zhuang Chen
- School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, People's Republic of China
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Sun H, Deng K, Kan E, Du Y. Second-order Jahn-Teller effect induced high-temperature ferroelectricity in two-dimensional NbO 2X (X = I, Br). NANOSCALE ADVANCES 2023; 5:2979-2985. [PMID: 37260497 PMCID: PMC10228335 DOI: 10.1039/d3na00245d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Accepted: 04/28/2023] [Indexed: 06/02/2023]
Abstract
Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) materials NbO2X (X = I, Br). Our cleavage energy analysis shows that exfoliating one NbO2I monolayer from its existing bulk counterpart is feasible. The phonon spectrum and molecular dynamics simulations confirm the dynamic and thermal stability of the monolayer structures for both NbO2I and NbO2Br. Total energy calculations show that the ferroelectric phase is the ground state for both materials, with the calculated in-plane ferroelectric polarizations being 384.5 pC m-1 and 375.2 pC m-1 for monolayers NbO2I and NbO2Br, respectively. Moreover, the intrinsic Curie temperature TC of monolayer NbO2I (NbO2Br) is as high as 1700 K (1500 K) from Monte Carlo simulation. Furthermore, with the orbital selective external potential method, the origin of ferroelectricity in NbO2X is revealed as the second-order Jahn-Teller effect. Our findings suggest that monolayers NbO2I and NbO2Br are promising candidate materials for practical ferroelectric applications.
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Affiliation(s)
- Huasheng Sun
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology Nanjing 210094 People's Republic of China
| | - Kaiming Deng
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology Nanjing 210094 People's Republic of China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology Nanjing 210094 People's Republic of China
| | - Yongping Du
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology Nanjing 210094 People's Republic of China
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Ma LY, Liu S. Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO_{2}. PHYSICAL REVIEW LETTERS 2023; 130:096801. [PMID: 36930924 DOI: 10.1103/physrevlett.130.096801] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Revised: 08/09/2022] [Accepted: 01/24/2023] [Indexed: 06/18/2023]
Abstract
Defects such as oxygen vacancy are widely considered to be critical for the performance of ferroelectric HfO_{2}-based devices, and yet atomistic mechanisms underlying various exotic effects such as wake-up and fluid imprint remain elusive. Here, guided by a lattice-mode-matching criterion, we systematically study the phase transitions between different polymorphs of hafnia under the influences of neutral and positively charged oxygen vacancies using a first-principles-based variable-cell nudged elastic band technique. We find that the positively charged oxygen vacancy can promote the transition of various nonpolar phases to the polar phase kinetically, enabled by a transient high-energy tetragonal phase and extreme charge-carrier-inert ferroelectricity of the polar Pca2_{1} phase. The intricate coupling between structural polymorphism kinetics and the charge state of the oxygen vacancy has important implications for the origin of ferroelectricity in HfO_{2}-based thin films as well as wake-up, fluid imprint, and inertial switching.
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Affiliation(s)
- Li-Yang Ma
- Fudan University, Shanghai 200433, China
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
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Ai Y, Lv HP, Wang ZX, Liao WQ, Xiong RG. H/F substitution for advanced molecular ferroelectrics. TRENDS IN CHEMISTRY 2021. [DOI: 10.1016/j.trechm.2021.09.010] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Xia C, Chen Y, Chen H. Pressure-induced metal-insulator transition in oxygen-deficient LiNbO 3-type ferroelectrics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:025501. [PMID: 34624871 DOI: 10.1088/1361-648x/ac2e30] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Accepted: 10/08/2021] [Indexed: 06/13/2023]
Abstract
Hydrostatic pressure and oxygen vacancies usually have deleterious effects on ferroelectric materials because both tend to reduce their polarization. In this work we use first-principles calculations to study an important class of ferroelectric materials-LiNbO3-type ferroelectrics (LiNbO3as the prototype), and find that in oxygen-deficient LiNbO3-δ, hydrostatic pressure induces an unexpected metal-insulator transition between 8 and 9 GPa. Our calculations also find that strong polar displacements persist in both metallic and insulating oxygen-deficient LiNbO3-δand the size of polar displacements is comparable to pristine LiNbO3under the same pressure. These properties are distinct from widely used perovskite ferroelectric oxide BaTiO3, whose polarization is quickly suppressed by hydrostatic pressure and/or oxygen vacancies. The anomalous pressure-driven metal-insulator transition in oxygen-deficient LiNbO3-δarises from the change of an oxygen vacancy defect state. Hydrostatic pressure increases the polar displacements of oxygen-deficient LiNbO3-δ, which reduces the band width of the defect state and eventually turns it into an in-gap state. In the insulating phase, the in-gap state is further pushed away from the conduction band edge under hydrostatic pressure, which increases the fundamental gap. Our work shows that for LiNbO3-type strong ferroelectrics, oxygen vacancies and hydrostatic pressure combined can lead to new phenomena and potential functions, in contrast to the harmful effects occurring to perovskite ferroelectric oxides such as BaTiO3.
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Affiliation(s)
- Chengliang Xia
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People's Republic of China
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200062, People's Republic of China
| | - Yue Chen
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People's Republic of China
| | - Hanghui Chen
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200062, People's Republic of China
- Department of Physics, New York University, New York 10003, United States of America
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