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Gordel-Wójcik M, Malik M, Siomra A, Samoć M, Nyk M. Third-Order Nonlinear Optical Properties of Aqueous Silver Sulfide Quantum Dots. J Phys Chem Lett 2023; 14:11117-11124. [PMID: 38054438 PMCID: PMC10755751 DOI: 10.1021/acs.jpclett.3c02820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/30/2023] [Accepted: 11/30/2023] [Indexed: 12/07/2023]
Abstract
Wide spectral wavelength range (500-1600 nm) measurements of nonlinear optical properties of silver sulfide (Ag2S, with 2- or 3-mercaptopropionic acid, 2 or 3MPA ligands) quantum dots (QDs) in aqueous colloidal solutions were performed using the Z-scan technique with tunable ∼55 fs laser pulses at 1 kHz. We have identified regions of the occurrence of various NLO effects including two-photon absorption, nonlinear refraction, as well as saturation of one-photon absorption. At the same time, we evaluated the relationship between the properties of the QDs and the variation of the material that covers their surface. The peak two-photon absorption cross section (σ2) values were determined to be 632 ± 271 GM (at 850 nm) for Ag2S-2MPA QDs and 772 ± 100 GM (at 875 nm) for Ag2S-3MPA QDs. The physicochemical factors influencing the three-dimensional self-organization of Ag2S QDs in water as well as their impact on spectroscopic properties were also investigated.
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Affiliation(s)
- Marta Gordel-Wójcik
- Faculty of Chemistry, University of Wrocław, 14.p F. Joliot-Curie Street, 50-383 Wrocław, Poland
| | - Magdalena Malik
- Faculty of Chemistry, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Agnieszka Siomra
- Institute of Advanced Materials, Faculty of Chemistry,Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, PL-50370 Wrocław, Poland
| | - Marek Samoć
- Institute of Advanced Materials, Faculty of Chemistry,Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, PL-50370 Wrocław, Poland
| | - Marcin Nyk
- Institute of Advanced Materials, Faculty of Chemistry,Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, PL-50370 Wrocław, Poland
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Wei X, Zhang Q, Cui Z, Yang D, Mei S, Zhang W, Xie H, Yu K, Guo R, Wei W. Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation. Inorg Chem 2023; 62:15258-15266. [PMID: 37671490 DOI: 10.1021/acs.inorgchem.3c02455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Understanding the electronic structure of doped InP quantum dots (QDs) is essential to optimize the material for specific optoelectronic applications. However, current synthesis approaches are often tedious and unfavorable for rational tunning. Herein, a combination of experimental and computational studies was conducted to address the doping mechanism and surface passivation of InP QDs. The successful dopant introduction requires low Cu doping concentration and heavy Mn doping, while the Ag doping amount is relatively moderate. This may correspond to the theoretical doping formation energy presented as Cu (-2.52 eV) < Ag (-1.76 eV) < Mn (-0.38 eV). As for surface passivation, inorganic ions and shell-like ZnS are unraveled through simulational investigation. Chloride ion promotes oriented growth toward tetrahedron morphology while nitrate-passivated InP QDs exhibit blurry transmission electron microscope (TEM) morphology. Correspondingly, the binding energy of chloride ion with (111) facet is -2.13 eV significantly lower than those of (110) and (100) facets. Further, the additional Zn 3d bands are more involved in the formation of conduction band, which optimized the Mn-doped InP with a 0.32 eV bandgap. These experimental and model results provide more microscopic details of doped InP, which can motivate theoretically exact control of guest ion stoichiometry with optimized characteristics for electrical devices.
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Affiliation(s)
- Xian Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qi Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongjie Cui
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Dan Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Shiliang Mei
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Wanlu Zhang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Haijiao Xie
- Hangzhou Yanqu Information Technology Co., Ltd., Y2, 2nd Floor, Building 2, Xixi Legu Creative Pioneering Park, No. 712 Wen'er West Road, Hangzhou 310003, China
| | - Kehan Yu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
- Zhongshan-Fudan Joint Innovation Center, Zhongshan 528437, China
- Yiwu Research Institute of Fudan University, Yiwu 322000, China
| | - Wei Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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