Bandgaps of atomically precise graphene nanoribbons and Occam's razor

Width effects on bilayer graphene nanoribbon polarons

Recent progress in nanoelectronics suggests that stacking armchair graphene nanoribbons (AGNRs) into bilayer systems can generate materials with emergent quasiparticle properties. In this context, the impact of width changes is especially relevant. However, its effect on charged carriers remains elusive. In this work, we investigate the effect of width and interlayer interaction changes on polaron states via a hybrid Hamiltonian that couples the electronic and lattice interactions. Results show the rising of two interlayer polarons: the non-symmetric and the symmetric. The coupling strength needed to induce the transition between states depends on the nanoribbon width, being at the most extreme case of ≈174 meV. Electronic properties such as the coupling strength threshold, carrier size, and gap are shown to respect the AGNR width family 3p, 3p + 1, and 3p + 2 rule. The findings demonstrate that strong interlayer interaction simultaneously delocalizes the carriers and reduces the gap up to 0.6 eV. Additionally, it is found that some layers are more prone to share charge, indicating a potential heterogeneous stacking where a particular electronic pathway is favored. The results present an encouraging prospect for integrating AGNR bilayers in future flexible electronics.

Electronic properties and carrier mobilities of nanocarbons formed by non-benzoidal building blocks

Exotic 1D and 2D carbon nanostructures have been grown in the laboratory in the last few years by means of surface-assisted chemical routes. In these processes, the strategical choice of a molecular precursor plays a dominant role in the determination of the synthesized nanocarbon. Further variations of these techniques are able to produce non-benzoidal carbon quantum-dots (QDs). Considering this experimental scenario as motivation, we propose a series of nanoribbon systems based on concatenating recently synthesized carbon QDs containing pentagonal, hexagonal, and heptagonal rings. We use density functional theory (DFT) simulations to reveal their properties can range from metallic to semiconducting depending on the concatenation hierarchy used to form the nanoribbons. This DFT implementation is based on a LCAO approach to describe valence wavefunctions and most of the simulations employ the PBE-GGA functional. Since this functional is known to underestimate band gaps, we also use the B3LYP functional in a plane-wave DFT approach for a selected case for comparison purposes. These systems show a different gap versus width relationship compared to conventional graphene nanoribbons setups and a particular set of carrier mobility values. We further discuss the interplay between the QD's frontier states and the electronic properties of the nanoribbons in light of their structural details.

Novel germanene-arsenene and germanene-antimonene lateral heterostructures: interline-dependent electronic and magnetic properties

Seamlessly stitching two-dimensional (2D) materials may lead to the emergence of novel properties triggered by the interactions at the interface. In this work, a series of 2D lateral heterostructures (LHSs), namely germanene-arsenene (Ge_m-As_8-m) and germanene-antimonene (Ge_m-Sb_8-m), are investigated using first-principles calculations. The results demonstrate a strong interline-dependence of the electronic and magnetic properties. Specifically, the LHS formation along an armchair line preserves the non-magnetic nature of the original materials. However, this is an efficient approach to open the electronic band gap of the germanene monolayer, where band gaps as large as 0.74 and 0.76 eV are induced for Ge₂-As₆ and Ge₂-Sb₆ LHSs, respectively. Meanwhile, magnetism may appear in the zigzag-LHSs depending on the chemical composition (m = 3, 4, 5, and 6 for germanene-arsenene and m = 2, 3, 4, 5, and 6 for germanene-antimonene), where total magnetic moments between 0.13 and 0.50 μ_B are obtained. Herein, magnetic properties are produced mainly by the spin-up state of Ge atoms at the interface, where a small contribution comes from As(Sb) atoms. Spin-resolved band structures show a multivalley profile in both the valence band and the conduction band with a topological insulator-like behavior, where the interface states are derived mainly from the interface Ge-p_z state. The results introduce new 2D lateral heterostructures with novel electronic and magnetic properties to allow new functionalities, which could be further explored for optoelectronic and spintronic applications.

Decoupling 1D and 2D features of 2D sp-nanoribbons-the megatom model

The dependence of the electron energy band gap on the width of ansp-nanoribbon is investigated using a generalization of the 1D tight binding model for a chain of atoms. Within the proposed generalization, small linear atomic formations along lines perpendicular to the 2D ribbon axis are modeled as single large atoms calledmegatomswhose properties depend on the type, the size and the atomic conformation. Replacement of a 1D chain of atoms by that of the megatoms is accompanied by the incorporation of zeroth order 2D features into the 1D model approximation of the nanoribbon. We use this model to investigate the oscillating band gap of ansp-nanoribbon in terms of the ribbon's width. Results are presented for the width dependence of the energy gap of the zig-zag Si₂BN nanoribbons.