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Zheng M, Zhang Y, Wang S, Yang J, Guan P, Zhang B, Fan H, Yan S, Ni H, Yang C. Effects of electric field and light on resistivity switching of Eu 0.7Sr 0.3MnO 3 thin films. Phys Chem Chem Phys 2024; 26:4968-4974. [PMID: 38230694 DOI: 10.1039/d3cp05256g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Based on the excellent piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystals, a hole-doped manganite film/PMN-PT heterostructure has been constructed to achieve electric-field and light co-control of physical properties. Here, we report the resistivity switching behavior of Eu0.7Sr0.3MnO3/PMN-PT(111) multiferroic heterostructures under different in-plane reading currents, temperatures, light stimuli and electric fields, and discuss the underlying coupling mechanisms of resistivity change. The transition from the electric-field induced lattice strain effect to polarization current effect can be controlled effectively by decreasing the in-plane reading current at room temperature. With the decrease of temperature, the interfacial charge effect dominates over the lattice strain effect due to the reduced charge carrier density. In addition, light stimulus can lead to the delocalization of eg carriers, and thus enhance the lattice strain effect and suppress the interfacial charge effect. This work helps to understand essential physics of magnetoelectric coupling and also provides a potential method to realize energy-efficient multi-field control of manganite thin films.
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Affiliation(s)
- Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China
| | - Yixiao Zhang
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Shengnan Wang
- College of Science, China University of Petroleum (East China), Qingdao 266580, China
| | - Jian Yang
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Pengfei Guan
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Baojing Zhang
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Heliang Fan
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Shiguang Yan
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hao Ni
- College of Science, China University of Petroleum (East China), Qingdao 266580, China
| | - Chang Yang
- Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, and Department of Electronics, East China Normal University, Shanghai, 200241, China
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