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Liang H, Ma Y, Yi H, Yao J. Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7372. [PMID: 38068116 PMCID: PMC10707280 DOI: 10.3390/ma16237372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/21/2023] [Accepted: 11/25/2023] [Indexed: 10/16/2024]
Abstract
By virtue of the widely tunable band structure, dangling-bond-free surface, gate electrostatic controllability, excellent flexibility, and high light transmittance, 2D layered materials have shown indisputable application prospects in the field of optoelectronic sensing. However, 2D materials commonly suffer from weak light absorption, limited carrier lifetime, and pronounced interfacial effects, which have led to the necessity for further improvement in the performance of 2D material photodetectors to make them fully competent for the numerous requirements of practical applications. In recent years, researchers have explored multifarious improvement methods for 2D material photodetectors from a variety of perspectives. To promote the further development and innovation of 2D material photodetectors, this review epitomizes the latest research progress in improving the performance of 2D material photodetectors, including improvement in crystalline quality, band engineering, interface passivation, light harvesting enhancement, channel depletion, channel shrinkage, and selective carrier trapping, with the focus on their underlying working mechanisms. In the end, the ongoing challenges in this burgeoning field are underscored, and potential strategies addressing them have been proposed. On the whole, this review sheds light on improving the performance of 2D material photodetectors in the upcoming future.
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Affiliation(s)
| | | | | | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, China; (H.L.); (Y.M.); (H.Y.)
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Romanov RI, Zabrosaev IV, Chouprik AA, Yakubovsky DI, Tatmyshevskiy MK, Volkov VS, Markeev AM. Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS 2 Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2712. [PMID: 37836353 PMCID: PMC10574732 DOI: 10.3390/nano13192712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 09/25/2023] [Accepted: 09/29/2023] [Indexed: 10/15/2023]
Abstract
Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.
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Affiliation(s)
- Roman I. Romanov
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Ivan V. Zabrosaev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Anastasia A. Chouprik
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Dmitry I. Yakubovsky
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Andrey M. Markeev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
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Yu T, Fang Y, Chen X, Liu M, Wang D, Liu S, Lei W, Jiang H, Shafie S, Mohtar MN, Pan L, Zhao Z. Hybridization state transition-driven carbon quantum dot (CQD)-based resistive switches for bionic synapses. MATERIALS HORIZONS 2023; 10:2181-2190. [PMID: 36994553 DOI: 10.1039/d3mh00117b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
As an emerging carbon-based material, carbon quantum dots (CQDs) have shown unstoppable prospects in the field of bionic electronics with their outstanding optoelectronic properties and unique biocompatible characteristics. In this study, a novel CQD-based memristor is proposed for neuromorphic computing. Unlike the models that rely on the formation and rupturing of conductive filaments, it is speculated that the resistance switching mechanism of CQD-based memristors is due to the conductive path caused by the hybridization state transition of the sp2 carbon domain and sp3 carbon domain induced by the reversible electric field. This avoids the drawback of uncontrollable nucleation sites leading to the random formation of conductive filaments in resistive switching. Importantly, it illustrates that the coefficient of variation (CV) of the threshold voltage can be as low as -1.551% and 0.083%, which confirms the remarkable uniform switching characteristics. Interestingly, the Pavlov's dog reflection as an important biological behavior can be demonstrated by the samples. Finally, the accuracy recognition rate of MNIST handwriting can reach up to 96.7%, which is very close to the ideal number (97.8%). A carbon-based memristor based on a new mechanism presented provides new possibilities for the improvement of brain-like computing.
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Affiliation(s)
- Tianqi Yu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Yong Fang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Xinyue Chen
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Min Liu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Dong Wang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Shilin Liu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Wei Lei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
| | - Helong Jiang
- State Key Laboratory of Lake Science and Environment, Nanjing Institute of Geography and Limnology Chinese Academy of Sciences, Nanjing 210008, People's Republic of China
| | - Suhaidi Shafie
- Institute of Nanoscience and Nanotechnology, University Putra Malaysia, Serdang, Selangor, Malaysia
| | - Mohd Nazim Mohtar
- Institute of Nanoscience and Nanotechnology, University Putra Malaysia, Serdang, Selangor, Malaysia
| | - Likun Pan
- Shanghai Key Laboratory of Magnetic Resonance, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Zhiwei Zhao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
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