Strain-mediated oxygen evolution reaction on magnetic two-dimensional monolayers

Strong Room-Temperature Ferromagnetism in Ultrathin NiOOH Nanosheets through Surfactant Manipulation

Two-dimensional (2D) ferromagnetic (FM) materials with nanoscale thickness and spontaneous net magnetization have emerged as a promising class of functional materials for applications in next-generation spintronics, quantum processing, and data storage devices. However, most 2D materials exhibit weak FM even at low temperatures, limiting their potential applications in many technological fields. The fabrication of strong room-temperature FM 2D materials is highly desirable for the development of practical applications. Here, we demonstrate an ionic layer epitaxy strategy to synthesize few-layered NiOOH nanosheets with strong room-temperature FM and a saturation magnetization up to 409.86 emu cm-3 at 300 K. The results are consistent with the ab initio predictions of a stable FM NiOOH nanolayer structure with an FM configuration. The FM strength of the NiOOH nanosheets can be tuned by controlling the surfactant monolayer density and annealing. This work offers a promising strategy for achieving strong high-temperature FM in 2D materials for spintronic applications.

Substrate Strain Engineering of Single-Atomic Sn-N4 Sites Embedded in Various Carbon Matrixes for Bifunctional Oxygen Electrocatalysis

It is still a great challenge to design and synthesize high-efficiency and low-cost single-atom catalysts (SACs) as promising bifunctional electrocatalysts for the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER). Herein, theoretical insights into Sn-N₄ embedded carbon nanotubes, graphene quantum dots, and graphene nanosheets (denoted as Sn-N₄-CNTs, Sn-N₄-GQDs, and Sn-N₄-Gra, respectively) for the ORR/OER are systematically provided. These results show that the protruding Sn atom creates a Sn-N₄ pyramid and induces varied strain transfer between Sn-N₄ and different carbon substrates prior to adsorption of O intermediates, resulting in the opposite response of the adsorption strengths of O intermediates to the substrate curvature of Sn-N₄-CNTs and Sn-N₄-GQDs. The torsional strain induced by OH* and OOH* on the Sn atom of Sn-N₄-CNTs breaks the scaling relations between the adsorption strengths of O intermediates. Consequently, Sn-N₄-CNTs with suitable curvature achieve outstanding ORR performance with very low overpotentials (0.28 V). Furthermore, the increase of curvature boosts the OER activity of Sn-N₄-CNTs. For Sn-N₄-GQDs, high curvature contributes to promoted OER activity but reduced ORR activity. The electronic interactions reveal the electron transfer from the s/p-bands of Sn to the half-filled β states of the frontier orbitals of O intermediates.

Magnetism in curved VSe2 monolayers

Our extensive first-principles calculations on magnetic VSe₂ monolayers reveal the curvature-induced periodic fluctuation in the magnetic moments of V atoms and the occurrence of charge density waves for curved VSe₂ monolayers. The bending energies of curved 2H-VSe₂ monolayers increase with increasing curvature but that of curved 1T-VSe₂ monolayers with curvature is not monotonic. The significant periodic magnetic orders in curved VSe₂ monolayers can be attributed to the curvature-induced modification of V-Se bond structure and periodic length variations in V-Se bonds. A phenomenological model is established to describe the relation of the total magnetic moment in one period of a curved VSe₂ monolayer with its curvature radius and the number of hexagonal rings that forms one period. These results unveil the effect of bending deformation on magnetic van der Waals monolayers and provide a possible way to develop functional magnetic devices by mechanical design.