Chemical Bonding and Activity of Atomically Dispersed Silicon in Two- and Three-Dimensional Materials

On the basis of the especially tunable electronic property of Si, several kinds of nanomaterials with atomically dispersed Si were constructed and characterized by extensive first-principles calculations and ab initio molecular dynamics (AIMD) simulations. The new-type Si(X≡Y)n wide-bandgap semiconductors featuring through-space d-π* hyperconjugation exhibit unique properties in photoelectric conversion, photoconductivity, structural mechanics, etc. The SiC8 siligraphene with the planar tetracoordinate Si (ptSi) has a high lithium-storage capacity and comparably facile surface migration behaviors of both Li and Li+, making it a promising anode material for high-performance Li-ion batteries. The atomically dispersed Si sites of 2D monolayer materials, such as ptSi and three- and four-coordinated Si atoms, generally exhibit remarkable catalytic activity toward CO2 activation with different electron mechanisms, resulting in different scaling relations between the activity and the p-band center. The computational findings enrich the understanding of structural and chemical properties of silicon and open up avenues for developing Si-based functional materials.

Novel octa-graphene-like structures based on GaP and GaAs

CONTEXT

The discovery of graphene gave way to the search for new two-dimensional structures. In this regard, octa-graphene is a carbon allotrope consisting of 4- and 8-membered rings in a single planar sheet, drawing the research community's attention to study their inorganic analogs. Considering the promising properties of octa-graphene-like structures and the role of GaAs and GaP in semiconductor physics, this study aims to propose, for the first time, two novel inorganics buckled nanosheets based on the octa-graphene structure, the octa-GaAs and octa-GaP. This work investigated the structural, electronic, and vibrational properties of these novel octa-graphene-based materials. The octa-GaP and octa-GaAs have an indirect band gap transition with a valence band maximum between M and Г points and a conduction band minimum at Г point with energy of 3.05 eV and 2.56 eV, respectively. The QTAIMC analysis indicates that both structures have incipient covalent in their bonds. The vibrational analysis demonstrates the occurrence of Γ_Raman = 6A_g + 6B_g and Γ_Raman = 12A' + 12B″ for octa-GaP and octa-GaAs, respectively. The symmetry reduction of octa-GaAs leads to activating inactive modes observed in the octa-GaP structure. The frontier crystalline orbitals are composed by Ga(p_x) and P(p_y and p_z) orbitals for octa-GaP and Ga(p_x and p_y) and As(s, p_y, and p_z) for octa-GaAs in the valence bands while in the conduction bands by Ga(p_y, p_z, and s) for both compounds and P(p_x and p_z) and As(p_y). The phonon bands demonstrate the absence of the negative frequency modes and the structural stability of these new nanosheets. This report aims to reveal the fundamental properties of both newfound materials for stimulating experimental research groups in the search for synthesis routes to obtain this structure.

METHODS

This work used the DFT/B3LYP approach implemented in the CRYSTAL17 computational package. Ga, As, and P atomic centers were described by triple-zeta valence with polarization (TZVP) basis set. The vibrational analysis was carried out via coupled-perturbed Hartree-Fock/Kohn Sham (CPHF/KS) method, and the chemical bonds were evaluated via the quantum theory of atoms in molecules and crystals (QTAIMC).

First-principles study of two-dimensional C-silicyne nanosheet as a promising anode material for rechargeable Li-ion batteries

Li-ion batteries are one of the sustainable alternatives to meet the growing energy demands of an increasing population. However, finding a suitable negative electrode is key for improving battery performance. In the present work, first principles-based investigations are carried out to explore the capability of a planar 2D C-silicyne nanosheet - which is a Si analogue of α-graphyne having -CC- substitution - as an anode for improving the performance of Li-ion batteries. Thermally and dynamically stable C-silicyne sheets exhibit a metallic nature as inferred from the density of states studies. The average adsorption energies for sequential adsorption of the Li atom over the monolayer range from -1.35 to -0.46 eV, implying favourable interactions between the monolayer and the Li atom which indicate that during the lithiation process, clustering amongst the metal atoms is not preferred. The energy barrier for the migration of Li-ions is 0.21 eV, indicating an active charge/discharge process. A high storage capacity of 836.07 mA h g^-1 and a working potential of 0.60 V is obtained. A negligible amount of volume change of the C-silicyne monolayer after full lithiation is observed which implies good cyclability. All these outcomes imply that C-silicyne nanosheets are a potential anode material for next-generation LIBs.