1
|
Peng Z, Grillo A, Pelella A, Liu X, Boyes M, Xiao X, Zhao M, Wang J, Hu Z, Di Bartolomeo A, Casiraghi C. Fully printed memristors made with MoS 2 and graphene water-based inks. MATERIALS HORIZONS 2024; 11:1344-1353. [PMID: 38180062 DOI: 10.1039/d3mh01224g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.
Collapse
Affiliation(s)
- Zixing Peng
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Alessandro Grillo
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Aniello Pelella
- Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano, 84084, Salerno, Italy
| | - Xuzhao Liu
- Department of Materials, University of Manchester, Oxford Road, Manchester, UK
- Photon Science Institute, University of Manchester, Oxford Road, Manchester, UK
| | - Matthew Boyes
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Xiaoyu Xiao
- Department of Electrical and Electronics, University of Manchester, Oxford Road, Manchester, UK
| | - Minghao Zhao
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Jingjing Wang
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Zhirun Hu
- Department of Electrical and Electronics, University of Manchester, Oxford Road, Manchester, UK
| | - Antonio Di Bartolomeo
- Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano, 84084, Salerno, Italy
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| |
Collapse
|
2
|
Pucher T, Bastante P, Parenti F, Xie Y, Dimaggio E, Fiori G, Castellanos-Gomez A. Biodegradable albumen dielectrics for high-mobility MoS 2 phototransistors. NPJ 2D MATERIALS AND APPLICATIONS 2023; 7:73. [PMID: 38665485 PMCID: PMC11041700 DOI: 10.1038/s41699-023-00436-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Accepted: 10/30/2023] [Indexed: 04/28/2024]
Abstract
This work demonstrates the fabrication and characterization of single-layer MoS2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS2 transistors high carrier mobilities (up to ~90 cm2 V-1 s-1) are observed, which is remarkably superior to that obtained with commonly used SiO2 dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS2 interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.5 AW-1 (operated in photogating regime) and rise times as low as 52 ms (operated in photoconductivity regime). The presented study reveals the combination of albumen with van der Waals materials for prospective biodegradable and biocompatible optoelectronic device applications. Furthermore, the demonstrated universal fabrication process can be easily adopted to fabricate albumen-based devices with any other van der Waals material.
Collapse
Affiliation(s)
- Thomas Pucher
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, 28049 Spain
| | - Pablo Bastante
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Federico Parenti
- Dipartimento di Ingegneria dell’Informazione, Via Caruso 16, 56122 Pisa, Italy
| | - Yong Xie
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, 28049 Spain
- School of Advanced Materials and Nanotechnology, Xidian University, 710071 Xi’an, China
| | - Elisabetta Dimaggio
- Dipartimento di Ingegneria dell’Informazione, Via Caruso 16, 56122 Pisa, Italy
| | - Gianluca Fiori
- Dipartimento di Ingegneria dell’Informazione, Via Caruso 16, 56122 Pisa, Italy
| | - Andres Castellanos-Gomez
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, 28049 Spain
- Unidad Asociada UCM/CSIC, “Laboratorio de Heteroestructuras con aplicación en spintrónica”, Madrid, Spain
| |
Collapse
|