In situ crystal reconstruction strategy-based highly efficient air-processed inorganic CsPbI2Br perovskite photovoltaics for indoor, outdoor, and switching applications

Interface modification for efficient carbon-electrode CsPbI2Br perovskite solar cells using ionic liquid

All-inorganic CsPbI2Br, as a promising photovoltaic (PV) material, have attracted extensive research attention in society for its outstanding thermal stability and appropriate trade-offs. Carbon-based perovskite solar cells (C-PSCs) without hole transporting layer (HTL) have shown great potential in terms of cost-effectiveness and stability. However, the inevitable defects on the surface of CsPbI2Br films severely hampers the development of high-efficiency CsPbI2Br C-PSCs. Surface engineering has emerged an effective approach to overcome this challenge. Herein, 1-decyl-3-methylimidazolium tetrafluoroborate (DMTT) ionic liquid was introduced between CsPbI2Br and carbon electrode to reduce non-recombination of charges, decrease defect states, minimize the energy-level mismatch, and greatly enhance the device stability. As a result, the HTL-free CsPbI2Br C-PSCs combined with DMTT as an interface modification achieved a higher power conversion efficiency (PCE) of 12.47% than that of the control devices with a PCE of 11.32%. Furthermore, without any encapsulation, the DMTT-optimized C-PSC remained approximately 84% of its initial PCE after over 700 h under room temperature and 25% relative humidity (RH) conditions. Additionally, when exposed to a temperature of 65 °C for over 400 h, the device still retained 74% of the initial PCE, demonstrating its thermal stability.

Controlled Crystal Growth of All-Inorganic CsPbI2.2Br0.8 Thin Film via Additive Strategy for Air-Processed Efficient Outdoor/Indoor Perovskite Solar Cells

The evolution of defects during perovskite film fabrication deteriorates the overall film quality and adversely affects the device efficiency of perovskite solar cells (PSCs). We endeavored to control the formation of defects by applying an additive engineering strategy using FABr, which retards the crystal growth formation of CsPbI2.2Br0.8 perovskite by developing an intermediate phase at the initial stage. Improved crystalline and pinhole-free perovskite film with an optimal concentration of FABr-0.8M% additive was realized through crystallographic and microscopic analysis. Suppressed non-radiative recombination was observed through photoluminescence with an improved lifetime of 125 ns for FABr-0.8M% compared to the control film (83 ns). The champion device efficiency of 17.95% was attained for the FABr-0.8M% PSC, while 15.94% efficiency was achieved in the control PSC under air atmospheric conditions. Furthermore, an impressively high indoor performance of 31.22% was achieved for the FABr-0.8M% PSC under 3200 K (1000 lux) LED as compared to the control (23.15%). With a realistic approach of air processing and controlling the crystallization kinetics in wide-bandgap halide PSCs, this investigation paves the way for implementing additive engineering strategies to reduce defects in halide perovskites, which can further benefit efficiency enhancements in outdoor and indoor applications.