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Levine I, Menzel D, Musiienko A, MacQueen R, Romano N, Vasquez-Montoya M, Unger E, Mora Perez C, Forde A, Neukirch AJ, Korte L, Dittrich T. Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States. J Am Chem Soc 2024; 146:23437-23448. [PMID: 39115182 PMCID: PMC11345761 DOI: 10.1021/jacs.4c06621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/28/2024] [Accepted: 07/29/2024] [Indexed: 08/22/2024]
Abstract
Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA2PbI4), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA2PbI4 and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.
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Affiliation(s)
- Igal Levine
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
- Institute
of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University, Jerusalem 91904, Israel
| | - Dorothee Menzel
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Artem Musiienko
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Rowan MacQueen
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Natalia Romano
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Manuel Vasquez-Montoya
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Eva Unger
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Carlos Mora Perez
- Theoretical
Physics and chemistry of Materials, Los
Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department
of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Aaron Forde
- Theoretical
Physics and chemistry of Materials, Los
Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Amanda J. Neukirch
- Theoretical
Physics and chemistry of Materials, Los
Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Lars Korte
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
| | - Thomas Dittrich
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, Division Solar Energy, Kekuléstraße 5, 12489 Berlin, Germany
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2
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Lin K, Sun X, Dirnberger F, Li Y, Qu J, Wen P, Sofer Z, Söll A, Winnerl S, Helm M, Zhou S, Dan Y, Prucnal S. Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr. ACS NANO 2024; 18:2898-2905. [PMID: 38240736 PMCID: PMC10832030 DOI: 10.1021/acsnano.3c07236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 01/11/2024] [Accepted: 01/16/2024] [Indexed: 01/31/2024]
Abstract
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.
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Affiliation(s)
- Kaiman Lin
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, 20024 Shanghai, People’s Republic of China
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Xiaoxiao Sun
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence
ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Yi Li
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Jiang Qu
- Leibniz
Institute for Solid State and Materials Research Dresden (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany
| | - Peiting Wen
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic
| | - Aljoscha Söll
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic
| | - Stephan Winnerl
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Yaping Dan
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, 20024 Shanghai, People’s Republic of China
| | - Slawomir Prucnal
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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3
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Lin Z, Wu YN, Xu SY, Chen BC, Huang PW, Qi XH, Lin YP, Du KZ. Dopant effect on the optical and thermal properties of the 2D organic-inorganic hybrid perovskite (HDA) 2PbBr 4. Dalton Trans 2024; 53:1691-1697. [PMID: 38167732 DOI: 10.1039/d3dt03841f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Lead-based two-dimensional organic-inorganic hybrid perovskites (2D HOIPs) are popular materials with various optical properties, which can be tuned through metal ion doping. Due to the size and valence misfit, metal ion dopants in 2D lead-based HOIPs are still limited. In this work, Mn2+, Sb3+ and Bi3+ are doped into 2D (HDA)2PbBr4 (HDA = protonated dopamine) successfully. As a result, the dopants in 2D (HDA)2PbBr4 can induce their characteristic optical spectra, which is studied at different temperatures and excitation powers. The temperature-dependent energy transfer in the Mn-doped sample has been clarified, in which abnormal phenomena including negative thermal quenching have been observed. In addition, the dopant ions can impact the phase transition temperatures of the samples, especially lowering their crystallization temperatures greatly. The mussel-inspired organic cation, feasible metal ion regulation, and superior stability provide (HDA)2PbBr4 potential for further applications.
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Affiliation(s)
- Zhi Lin
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Ya-Nan Wu
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Si-Yu Xu
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Bi-Cui Chen
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Pei-Wen Huang
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Xing-Hui Qi
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China.
| | - Yang-Peng Lin
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
| | - Ke-Zhao Du
- College of Chemistry and Materials Science, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fujian Normal University, Fuzhou, 350007, China.
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