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Zhu H, Chen Z, Dai R, Yang B, Zhong M, Xiao S, He J. Broad -band nonlinear optical response in Bi 2Te 0.6S 2.4 alloys based on alloy engineering. NANOSCALE 2024; 16:11716-11723. [PMID: 38864172 DOI: 10.1039/d4nr01518e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
Alloy engineering plays an important role in regulating the optoelectronic properties of materials. This work demonstrates that Bi2Te0.6S2.4 alloys can extend nonlinear optical response to the near-infrared range. Te alloying at S sites can narrow the band gap, as proved by density functional theory (DFT) calculations, leading to a broadband saturable absorption response ranging from ultraviolet (350 nm) to near-infrared (1100 nm) wavelength with negative nonlinear optical absorption coefficient ranging from -0.12 cm GW-1 to -1.28 cm GW-1. Moreover, the broadband carrier dynamic of Bi2Te0.6S2.4 alloys was investigated via femtosecond transient absorption (TA) at an excitation of 325 nm. A faster carrier dynamic at near-infrared wavelength was observed because of an increase in electron density at the conduction band minimum due to the additional Bi-Te interaction, which was corroborated by DFT calculations. These results suggest that alloy engineering provides an effective way for the development of broadband nonlinear optical devices.
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Affiliation(s)
- Haixia Zhu
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Zhaozhe Chen
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Rui Dai
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Bojun Yang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Si Xiao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China.
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Pinheiro T, Morais M, Silvestre S, Carlos E, Coelho J, Almeida HV, Barquinha P, Fortunato E, Martins R. Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402014. [PMID: 38551106 DOI: 10.1002/adma.202402014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 03/18/2024] [Indexed: 04/25/2024]
Abstract
Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools.
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Affiliation(s)
- Tomás Pinheiro
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Maria Morais
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Sara Silvestre
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Emanuel Carlos
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - João Coelho
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Henrique V Almeida
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Pedro Barquinha
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Elvira Fortunato
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Rodrigo Martins
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
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Qian Z, Ji J, Qian L, Mao Y, Yao S, Xu J, Wang L. Interlayer coupling controlled electronic and magnetic properties of two-dimensional VOCl 2/PtTe 2 van der Waals heterostructure. RSC Adv 2023; 13:35018-35025. [PMID: 38046632 PMCID: PMC10690494 DOI: 10.1039/d3ra07237a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 11/26/2023] [Indexed: 12/05/2023] Open
Abstract
The coupling of hetero monolayers into van der Waals (vdW) heterostructures has become an effective way to obtain tunable physical and chemical properties of two dimensional (2D) materials. In this work, based on first principles calculations, we systematically explore the electronic and magnetic properties of a 2D VOCl2/PtTe2 heterostructure. Our results indicate that the ground state of the VOCl2/PtTe2 heterostructure is a ferromagnetic (FM) metal with large magnetic anisotropy energy, among which, the VOCl2 "sublayer" shows FM half metallic properties while the PtTe2 "sublayer" shows nonmagnetic metallic properties. The Curie temperature (TC) of VOCl2/PtTe2 is 111 K. Moreover, the FM-antiferromagnetic (AFM) phase transition can be obtained under biaxial strain. Our work provides an effective way to improve the performance of 2D monolayers in nano-electronic devices.
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Affiliation(s)
- Zhonghua Qian
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Jie Ji
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Liyan Qian
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Yuxuan Mao
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Suchen Yao
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Jingyi Xu
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
| | - Licheng Wang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University Yangzhou 225002 China
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Yang D, Zhao L, Cheng J, Chen M, Liu H, Wang J, Han C, Sun Y. Unveiling sub-bandgap energy-level structures on machined optical surfaces based on weak photo-luminescence. NANOSCALE 2023; 15:18250-18264. [PMID: 37800341 DOI: 10.1039/d3nr03488g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/07/2023]
Abstract
Sub-bandgap defect energy levels (SDELs) introduced by the point defects located in surface defect areas are considered the main factors in decreasing laser-induced damage thresholds (LIDTs). The suppression of SDELs could greatly increase LIDTs. However, no available method could detect SDELs, limiting the characterization and suppression of SDELs. Herein, a self-designed photo-luminescence detection system is developed to explore the weak transient-steady photo-luminescence properties of machined surfaces. Based on the excitation laser wavelength dependence of photo-luminescence properties, a sub-bandgap energy-level structure (SELS) containing SDELs is unveiled for the first time. Based on the developed mathematical model for predicting LIDTs, the feasibility of the detection method was verified. In summary, this work provides a novel approach to characterize SDELs on machined surfaces. This work could construct electronic structures and explore the transition behaviors of electrons, which is vital to laser-induced damage. Besides, this work could predict the LIDTs of the machined surfaces based on their PL properties, which provides convenience for evaluating the LIDTs of various optical elements in industrial production. Moreover, this work provides a convenient method for raising the LIDTs of various optical elements through monitoring and suppressing the SDELs on machined surfaces.
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Affiliation(s)
- Dinghuai Yang
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Linjie Zhao
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Jian Cheng
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Mingjun Chen
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Henan Liu
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Jinghe Wang
- Center for Precision Engineering, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Chengshun Han
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Yazhou Sun
- State Key Laboratory of Robotics and System, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
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