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Zhang X, Liu D, Liu S, Cai Y, Shan L, Chen C, Chen H, Liu Y, Guo T, Chen H. Toward Intelligent Display with Neuromorphic Technology. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2401821. [PMID: 38567884 DOI: 10.1002/adma.202401821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/19/2024] [Indexed: 04/16/2024]
Abstract
In the era of the Internet and the Internet of Things, display technology has evolved significantly toward full-scene display and realistic display. Incorporating "intelligence" into displays is a crucial technical approach to meet the demands of this development. Traditional display technology relies on distributed hardware systems to achieve intelligent displays but encounters challenges stemming from the physical separation of sensing, processing, and light-emitting modules. The high energy consumption and data transformation delays limited the development of intelligence display, breaking the physical separation is crucial to overcoming the bottlenecks of intelligence display technology. Inspired by the biological neural system, neuromorphic technology with all-in-one features is widely employed across various fields. It proves effective in reducing system power consumption, facilitating frequent data transformation, and enabling cross-scene integration. Neuromorphic technology shows great potential to overcome display technology bottlenecks, realizing the full-scene display and realistic display with high efficiency and low power consumption. This review offers a comprehensive summary of recent advancements in the application of neuromorphic technology in displays, with a focus on interoperability. This work delves into its state-of-the-art designs and potential future developments aimed at revolutionizing display technology.
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Affiliation(s)
- Xianghong Zhang
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Di Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Shuai Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yongjie Cai
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Liuting Shan
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Cong Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huimei Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yaqian Liu
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, Henan, 450002, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
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Wen D, Hu J, Yuan R, Li W, Cao K, Chen R. Atomic-scale stress modulation of nanolaminate for micro-LED encapsulation. NANOSCALE 2024; 16:4760-4767. [PMID: 38303682 DOI: 10.1039/d3nr06169h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Micro/nano-LEDs for augmented reality (AR) and virtual reality (VR) applications face the challenge that the edge effect in micro-LEDs becomes significant as the size of devices shrinks. This issue can be effectively addressed through thin-film encapsulation, where zero stress of the thin film is a crucial factor, apart from the barrier property. Herein, a stress-modulation strategy was developed through a binary-cycle atomic-layer deposition (ALD) process combining PEALD SiO2 (compressive stress) and thermal ALD Al2O3 (tensile stress) in the same process window. The hybrid ALD process allows avoiding extra thermal stress generation and enables precise modulation of the atomic-scale thickness, thereby allowing the fabrication of nanolaminates with modulated stress. The optical nanolaminate developed herein achieved a stress level of near-zero, representing one of the best among reported studies. The structural design, characterized by a high-low refractive index, tortuous permeation path, and ultra-thin thickness, remarkably improved the optical transmittance and barrier properties (8.68 × 10-6 g m-2 day-1) of the nanolaminate. Moreover, the micro-LED encapsulated with SA2/1 exhibited excellent stability under thermal cycling, damp heat, and applied stress conditions. The mechanical stability of the nanolaminate was due to the strong interaction between Si-O and Al-O and the abundance of Si-O-Al bonding in the interface. Overall, the ALD-coating process provides a new avenue for accurately controlling the stress on nanolaminates, and has potential application to bolster the reliability of optoelectronic devices.
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Affiliation(s)
- Di Wen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Jiacheng Hu
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Ruige Yuan
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Wang Li
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Kun Cao
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Rong Chen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology and School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
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