Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer

Ferroelectric polarization promotes a CdS/In2Se3 heterostructure for photocatalytic water splitting

The rapid recombination of photogenerated electrons and holes greatly limits the efficiency of photocatalyst based on semiconductor. In order to address this issue, we predicted a novel ferroelectric polarized heterojunction photocatalyst, CdS/In2Se3, which enables the spontaneous overall water splitting reaction. The CdS/In2Se3 heterojunction exhibits a band-edge staggered alignment and it is easy to form a direct Z-scheme charge transfer pathway. Besides, the built-in electric field (Eint) in the CdS/In2Se3 heterojunction promoted the charge transfer of CdS/In2Se3, leading to an improved separating efficiency of photo-generated carriers. Moreover, the vertical intrinsic polarized electric field (Ep) not only alters the position of the band edge but also reduces the bandgap limitations commonly associated with photocatalytic materials. Furthermore, the CdS/In2Se3 heterojunctions demonstrate separate catalytic activity for the hydrogen evolution reaction (HER) on the surface of the CdS monolayer and oxygen evolution reaction (OER) on the surface of In2Se3, respectively. Notably, the CdS/In2Se3-down configuration enables spontaneous photocatalytic water splitting in pH = 7, while the CdS/In2Se3-up configuration efficiently facilitates the HER process. This study highlights the significant advantages of CdS/In2Se3 heterojunctions as photocatalytic materials, offering unique insights into the development and research of this promising heterojunction architecture.

Toward intrinsic ultra-high-temperature ferromagnetism in a CrAuTe2/graphene heterosystem

Exploring intrinsic two-dimensional (2D) ferromagnetic (FM) materials with high Curie temperatures (TC) and large magnetic anisotropy energies (MAE) is one of the effective solutions to develop materials for high-performance spintronic applications. Using density functional theory calculations and high-throughput computations, we predict an intrinsic bimetallic FM monolayer, CrAuTe2, which has a large MAE and high TC. The results show that the value of the MAE can reach about 1.5 meV per Cr, and Monte Carlo simulations show that the TC of monolayer CrAuTe2 is about 840 K. Further analysis indicates that the joint effects of spin-orbit coupling (SOC) interaction and magnetic dipole-dipole interaction result in high in-plane magnetic anisotropy. In addition, this monolayer has good dynamic, thermal, and mechanical stabilities, which were confirmed by ab initio molecular dynamics simulations, phonon spectra, and elastic constants, respectively. In order to propose a practical synthesis approach, we built a CrAuTe2/graphene van der Waals heterostructure, and found that the heterostructure does not affect the magnetic properties of monolayer CrAuTe2. These findings appear promising for the future applications in nano-spintronics.

Two-Dimensional Transition Metal Boride TMB12 (TM = V, Cr, Mn, and Fe) Monolayers: Robust Antiferromagnetic Semiconductors with Large Magnetic Anisotropy

Currently, two-dimensional (2D) materials with intrinsic antiferromagnetism have stimulated research interest due to their insensitivity to external magnetic fields and absence of stray fields. Here, we predict a family of stable transition metal (TM) borides, TMB12 (TM = V, Cr, Mn, Fe) monolayers, by combining TM atoms and B12 icosahedra based on first-principles calculations. Our results show that the four TMB12 monolayers have stable antiferromagnetic (AFM) ground states with large magnetic anisotropic energy. Among them, three TMB12 (TM=V, Cr, Mn) monolayers display an in-plane easy magnetization axis, while the FeB12 monolayer has an out-of-plane easy magnetization axis. Among them, the CrB12 and the FeB12 monolayers are AFM semiconductors with band gaps of 0.13 eV and 0.35 eV, respectively. In particular, the AFM FeB12 monolayer is a spin-polarized AFM material with a Néel temperature of 125 K. Moreover, the electronic and magnetic properties of the CrB12 and the FeB12 monolayers can be modulated by imposing external biaxial strains. Our findings show that the TMB12 monolayers are candidates for designing 2D AFM materials, with potential applications in electronic devices.

A novel two-dimensional NiCl2O8 lattice with negative Poisson's ratio and magnetic modulation

Two-dimensional (2D) materials with simultaneous magnetic semiconducting properties and a negative Poisson's ratio are crucial for fabricating multifunctional electronic devices. However, progress in this area has been generally constrained. Based on first-principles calculations, we engineered a 2D Ni-based oxyhalide with a honeycomb lattice structure. It was observed that the NiCl2O8 monolayer exhibits both high- and low-buckling states in its geometry, along with intrinsic magnetic semiconductor properties in its electronic structure. Importantly, we demonstrated that the magnetic ordering of the NiCl2O8 lattice is susceptible to applied strain, which resulted in a phase transition from paramagnetic to ferromagnetic under biaxial strain. The Curie temperature was also evaluated using Monte Carlo simulations within the Ising model. Additionally, our research uncovered that the 2D NiCl2O8 lattice chain displays a negative Poisson's ratio (NPR) along the z-direction. The triangular hinge structure in its centrosymmetric configuration was identified as the origin of this unique phenomenon. The coexistence of NPR and magnetic phase transition properties in the NiCl2O8 lattice makes it quite promising for applications in nanoelectronic and spintronic devices.