Efficient CuO/Ag2WO4 photoelectrodes for photoelectrochemical water splitting using solar visible radiation

Integration of a Cu2O/ZnO heterojunction and Ag@SiO2 into a photoanode for enhanced solar water oxidation

Photoelectrochemical water splitting (PEC-WS) has attracted considerable attention owing to its low energy consumption and sustainable nature. Constructing semiconductor heterojunctions with controllable band structure can effectively facilitate photogenerated carrier separation. In this study, a FTO/ZnO/Cu2O/Ag@SiO2 photoanode with a Cu2O/ZnO p-n heterojunction and Ag@SiO2 nanoparticles is constructed to investigate its PEC-WS performance. Compared with a bare ZnO photoanode, the photocurrent density of the FTO/ZnO/Cu2O/Ag@SiO2 photoanode (0.77 mA cm-2) at 1.23 VRHE exhibits an increment of 88%, and a cathodic shift of 0.1 V for the on-set potential (0.4 VRHE). Detailed photoelectrochemical analyses reveal that the Cu2O/ZnO p-n heterojunction formed between Cu2O and ZnO can effectively promote photogenerated carrier separation. The surface plasmonic effect of the Ag@SiO2 nanoparticles can further promote the photogenerated carrier transfer efficiency, which synergistically improves the PEC-WS performance.

Solution-processed Sb2Se3 photocathodes under Se-rich conditions and their photoelectrochemical properties

In this study, selenium (Se)-rich antimony selenide (Sb2Se3) films were fabricated by applying a solution process with the solvents ethylenediamine and 2-mercaptoethanol to optimize the photoelectrochemical (PEC) performance of the Sb2Se3 photocathode. Various antimony (Sb)-Se precursor solutions with different molar ratios of Sb and Se (Sb : Se = 1 : 1.5, 1 : 3, 1 : 4.5, 1 : 7.5, and 1 : 9) were prepared to attain Se-rich fabrication conditions. As a result, the Se-rich Sb2Se3 films fabricated using the Sb-Se precursor solution with a molar ratio of Sb : Se = 1 : 7.5 exhibited an improved PEC performance, compared to the stoichiometric Sb2Se3 film. The charge transport was improved by the abundant Se element and thin selenium oxide (Se2O3) layer in the Se-rich Sb2Se3 film, resulting in a decrease in Se vacancies and substitutional defects. Moreover, the light utilization in the long wavelength region above 800 nm was enhanced by the light-trapping effect because of the nanowire structure in the Se-rich Sb2Se3 film. Hence, the optimal Se-rich Sb2Se3 photocathodes showed an improved photocurrent density of -0.24 mA cm-2 at the hydrogen evolution reaction potential that was three times higher than that of the stoichiometric Sb2Se3 photocathodes (-0.08 mA cm-2).