Harnessing the potential of CsPbBr3-based perovskite solar cells using efficient charge transport materials and global optimization

Pressure-induced structural, electronic, optical, and mechanical properties of lead-free GaGeX3 (X = Cl, Br and, I) perovskites: First-principles calculation

Researchers are now focusing on inorganic halide-based cubic metal perovskites that are not toxic as they strive to commercialize optoelectronic products and solar cells derived from perovskites. This study explores the properties of new lead-free compounds, specifically GaGeX3 (where X = Cl, Br, and I), by executing first-principles Density Functional Theory (DFT) to analyze their optical, electronic, mechanical, and structural characteristics under pressure. Assessing the reliability of all compounds is done meticulously by applying the criteria of Born stability and calculating the formation energy. As discovered through elastic investigations, these materials showed anisotropic behavior, flexibility, and excellent elastic stability. The electronic band structures, calculated using both HSE06 and GGA-PBE functionals at 0 GPa, reveal fascinating behavior. However, computed band structures with non-zero pressures using GGA-PBE. Here, the conduction band moved to the lower energy when the halide Cl was changed with Br or I. In addition, the application of hydrostatic pressure can lead to tunable band gap properties in all compounds such as from 0.779 eV to 0 eV for GaGeCl3, from 0.462 eV to 0 eV for GaGeBr3 and from 0.330 eV to 0 eV for GaGeI3, resulting transformation from semiconductor to metallic. Understanding the origins of bandgap changes can be illuminated by examining the partial and total density of states (PDOS & TDOS). When subjected to pressure, all the studied compounds showed an impactful increase in absorption coefficients and displayed exceptional optical conductivity in both the visible and UV zones. Yet, GaGeCl3 is a more effective UV absorber because it absorbs light more strongly in the UV area. Moreover, GaGeI3 stands out among the compounds examined due to its impressive visible absorption and optical conductivity, which remain consistent under varying pressure conditions. Besides, GaGeI3 exhibits higher reflectivity when subjected to pressure making them suitable for UV shielding applications. At last, these metal cubic halide perovskites without lead present promising opportunities for advancing optoelectronic technologies. With their tunable properties and favorable optical characteristics, these materials are highly sought after for their potential in solar cells, multi-junctional solar cells, and different optoelectronic functions.

Solar power conversion: CuI hole transport layer and Ba3NCl3 absorber enable advanced solar cell technology boosting efficiency over 30

Researchers are becoming more interested in novel barium-nitride-chloride (Ba3NCl3) hybrid perovskite solar cells (HPSCs) due to their remarkable semiconductor properties. An electron transport layer (ETL) built from TiO2 and a hole transport layer (HTL) made of CuI have been studied in Ba3NCl3-based single junction photovoltaic cells in a variety of variations. Through extensive numerical analysis using SCAPS-1D simulation software, we investigated elements such as layer thickness, defect density, doping concentration, interface defect density, carrier concentration, generation, recombination, temperature, series and shunt resistance, open circuit voltage (V OC), short circuit current (J SC), fill factor (FF), and power conversion efficiency (PCE). The study found that the HTL CuI design reached the highest PCE at 30.47% with a V OC of 1.0649 V, a J SC of 38.2609 mA cm-2, and an FF of 74.78%. These findings offer useful data and a practical plan for producing inexpensive, Ba3NCl3-based thin-film solar cells.

Design and Optimization of High-Performance Novel RbPbBr3-Based Solar Cells with Wide-Band-Gap S-Chalcogenide Electron Transport Layers (ETLs)

Inorganic cubic rubidium-lead-halide perovskites have attracted considerable attention owing to their structural, electronic, and unique optical properties. In this study, novel rubidium-lead-bromide (RbPbBr3)-based hybrid perovskite solar cells (HPSCs) with several high-band-gap chalcogenide electron transport layers (ETLs) of In2S3, WS2, and SnS2 were studied by density functional theory (DFT) and using the SCAPS-1D simulator. Initially, the band gap and optical performance were computed using DFT, and these results were utilized for the first time in the SCAPS-1D simulator. Furthermore, the impact of different major influencing parameters, that is, the thickness of the layer, bulk defect density, doping concentration, and defect density of interfaces, including the working temperature, were also investigated and unveiled. Further, a study on an optimized device with the most potential ETL (SnS2) layer was performed systematically. Finally, a comparative study of different reported heterostructures was performed to explore the benchmark of the most recent efficient RbPbBr3-based photovoltaics. The highest power conversion efficiency (PCE) was 29.75% for the SnS2 ETL with Voc of 0.9789 V, Jsc of 34.57863 mA cm-2, and fill factor (FF) of 87.91%, while the PCEs of 21.15 and 24.57% were obtained for In2S3 and WS2 ETLs, respectively. The electron-hole generation, recombination rates, and quantum efficiency (QE) characteristics were also investigated in detail. Thus, the SnS2 ETL shows strong potential for use in RbPbBr3-based hybrid perovskite high-performance photovoltaic devices.

A numerical approach to optimize the performance of HTL-free carbon electrode-based perovskite solar cells using organic ETLs

Carbon electrode-based perovskite solar cells (c-PSCs) without a hole transport layer (HTL) have obtained a significant interest owing to their cost-effective, stable, and simplified structure. However, their application is limited by low efficiency and the prevalence of high-temperature processed electron transport layer (ETL), e.g. TiO2, which also has poor optoelectronic properties, including low conductivity and mobility. In this study, a series of organic materials, namely PCBM ((Park et al., 2023; Park et al., 2023) [6,6]-phenyl-C61-butyric acid methyl ester, C72H14O2), Alq3 (Al(C9H6NO)3), BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline, C26H20N2), C60, ICBA (indene-C60 bisadduct, C78H16) and PEIE (poly (ethylenimine) ethoxylated, (C37H24O6N2)n) have been numerically analyzed in SCAPS-1D solar simulator to explore alternative potential ETL materials for HTL-free c-PSCs. The presented device has FTO/ETL/CH3NH3PbI3/carbon structure, and its performance is optimized based on significant design parameters. The highest achieved PCEs for PCBM, Alq3, BCP, C60, ICBA, and PEIE-based devices are 22.85%, 19.08%, 20.99%, 25.51%, 23.91%, and 22.53%, respectively. These PCEs are obtained for optimum absorber thickness for each case, with an acceptor concentration of 1.0 × 1017 cm-3 and defect density of 2.5 × 1013 cm-3. The C60-based cell has been found to outperform with device parameters as Voc of 1.29 V, Jsc of 23.76 mA/cm2, and FF of 82.67%. As the design lacks stability when only organic materials are employed, each of the presented devices have been analyzed by applying BiI3, LiF, and ZnO as protective layers with the performances not compromised. We believe that our obtained results will be of great interest in developing stable and efficient HTL-free c-PSCs.

A novel investigation of pressure-induced semiconducting to metallic transition of lead free novel Ba3SbI3 perovskite with exceptional optoelectronic properties

The structural, electronic, mechanical, and optical characteristics of barium-based halide perovskite Ba3SbI3 under the influence of pressures ranging from 0 to 10 GPa have been analyzed using first-principles calculations for the first time. The new perovskite Ba3SbI3 material was shown to be a direct band gap semiconductor at 0 GPa, but the band gap diminished when the applied pressure increased from 0 to 10 GPa. So the Ba3SbI3 material undergoes a transition from semiconductor to metallic due to high pressure at 10 GPa. The Ba3SbI3 material also exhibits an increase in optical absorption and conductivity with applied pressure due to the change in band gap, which is more suitable for solar absorbers, surgical instruments, and optoelectronic devices. The charge density maps confirm the presence of both ionic and covalent bonding characteristics. Exploration into the mechanical characteristics indicates that the Ba3SbI3 perovskite is mechanically stable. Additionally, the Ba3SbI3 compound becomes strongly anisotropic at high pressure. The insightful results of our simulations will all be helpful for the experimental structure of a new effective Ba3SbI3-based inorganic perovskite solar cell in the near future.

Band gap engineering in lead free halide cubic perovskites GaGeX3 (X = Cl, Br, and I) based on first-principles calculations

Lead-free inorganic Ge-based perovskites GaGeX3 (X = Cl, Br, and I) are promising candidates for solar cell applications due to their structural, mechanical, electrical, and optical properties. In this work, we performed density functional theory (DFT) calculations using the CASTEP module to investigate these properties in detail. We found that the lattice parameters and cell volumes increase with the size of the halogen atoms, and that all the compounds are stable and ductile. GaGeBr3 has the highest ductility, machinability, and lowest hardness, while GaGeCl3 has the highest anisotropy. The band gap values, calculated using the GGA-PBE and HSE06 functionals, show a direct band gap at the R-R point, ranging from 0.779 eV and 1.632 eV for GaGeCl3 to 0.330 eV and 1.140 eV for GaGeI3. The optical properties, such as absorption coefficient, conductivity, reflectivity, refractive index, extinction coefficient, and dielectric function, are also computed and discussed. We observed that the optical properties improve with the redshift of the band gap as Cl is replaced by Br and I. GaGeI3 has the highest dielectric constant, indicating the lowest recombination rate of electron-hole pairs. Our results suggest that GaGeX3 (X = Cl, Br, and I) can be used as effective and non-toxic materials for multijunction solar cells and other semiconductor devices.

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Perovskite photovoltaics have an immense contribution toward the all-round development of the solar cell. Apart from the flexibility, stability, and high efficiency, more stress has been given to using lead-free as well as eco-friendly, inexpensive materials in the fabrication of PSC devices. The utilization of non-volatile material, such as cesium tin iodide (CsSnI3), can be proposed for designing the PSC device, which not only makes it eco-friendly but also offers better optoelectronic characteristics due to its smaller bandgap of 1.27 eV. The inclusion of Sn in the perovskite material also functions as an increment in the stability of the perovskite. In the present simulation, CsSnI3 is used as an active absorber layer while the ZnMgO is used as an ETL for a cost-effective nature. Similarly, graphene oxide (GO) is used as HTL for a superior collection of holes. The comprehensive numerical modeling of the ZnMgO can be utilized in solar cell designing with appropriate CsSnI3 thickness, working temperature, total defectivity, and resistance impact, respectively. The presently simulated device offers an excellent efficiency of 17.37 % with CsSnI3-based PSC. These results of the study also show an effective route to develop highly efficient lead-free PSC devices.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.

Comprehensive analysis of heterojunction compatibility of various perovskite solar cells with promising charge transport materials

The allure of perovskite solar cells (PSCs), which has captivated the interest of researchers, lies in their versatility to incorporate a wide range of materials within the cell's structure. The compatibility of these materials plays a vital role in the performance enhancement of the PSC. In this study, multiple perovskite materials including FAPbI3, MAGeI3 and MASnI3 are numerically modelled along with the recently emerged kesterite (CBTS, CMTS, and CZTS) and zinc-based (ZnO and CdZnS) charge transport materials. To fully explore the potential of PSCs and comprehend the interplay among these materials, a total of 18 PSC structures are modeled from different material combinations. The impact of band gap, electron affinity, absorption, band alignment, band offset, electric field, recombination rate, thickness, defects, and work function were analyzed in detail through a systematic approach. The reasons for varying performance of different PSCs are also identified. Based on the simulated results, the most suitable charge transport materials are CdZnS/CMTS for FAPbI3 producing a power conversion efficiency (PCE) of 22.05%, ZnO/CZTS for MAGeI3 with PCE of 17.28% and ZnO/CBTS for MASnI3 with a PCE of 24.17%.

Lead-free novel perovskite Ba3AsI3: First-principles insights into its electrical, optical, and mechanical properties

Lead-free halide perovskites are a crucial family of materials in the fabrication of solar cells. At present, Solar cells are facing several challenges such as mechanical and thermodynamic instability, toxicity, unsuitable optical parameters, bandgap, and absorption coefficient. Ba3AsI3 is a halide perovskite which has demonstrated good efficiency and tremendous promise for usage in solar cell applications, and it offers a possible solution to these issues. In this study, the properties of the Ba3AsI3 perovskite solar cell were investigated using first-principles density functional theory (FP-DFT) calculations with the CASTEP (Cambridge serial total energy package) formulation. Most of its physical qualities, including its elasticity, electrical composition, bonding, optoelectronic characteristics, and optical characteristics have not yet been explored. In this work, these unexplored properties have been thoroughly investigated using density functional theory-based computations. The Born-Huang criterion and phonon dispersion characteristics have revealed that the material is mechanically stable. The bonding nature has been investigated using the density of states curves, Mulliken population analysis, and electronic charge density. Additionally, different elastic parameters demonstrate that Ba3AsI3 has reasonably high machinability and is mechanically isotropic. ELATE's three-dimensional visualization and optical properties also show isotropic behavior in all directions. The band structure shows that the bandgap is direct. Based on its direct bandgap, stability, large range of absorption coefficient, and suitable optical parameters, Ba3AsI3 is recommended as an absorber layer for solar cell fabrication in a near future.

Boosting efficiency above 28% using effective charge transport layer with Sr3SbI3 based novel inorganic perovskite

Strontium antimony iodide (Sr3SbI3) is one of the emerging absorbers materials owing to its intriguing structural, electronic, and optical properties for efficient and cost-effective solar cell applications. A comprehensive investigation on the structural, optical, and electronic characterization of Sr3SbI3 and its subsequent applications in heterostructure solar cells have been studied theoretically. Initially, the optoelectronic parameters of the novel Sr3SbI3 absorber, and the possible electron transport layer (ETL) of tin sulfide (SnS2), zinc sulfide (ZnS), and indium sulfide (In2S3) including various interface layers were obtained by DFT study. Afterward, the photovoltaic (PV) performance of Sr3SbI3 absorber-based cell structures with SnS2, ZnS, and In2S3 as ETLs were systematically investigated at varying layer thickness, defect density bulk, doping density, interface density of active materials including working temperature, and thereby, optimized PV parameters were achieved using SCAPS-1D simulator. Additionally, the quantum efficiency (QE), current density-voltage (J-V), and generation and recombination rates of photocarriers were determined. The maximum power conversion efficiency (PCE) of 28.05% with JSC of 34.67 mA cm-2, FF of 87.31%, VOC of 0.93 V for SnS2 ETL was obtained with Al/FTO/SnS2/Sr3SbI3/Ni structure, while the PCE of 24.33%, and 18.40% in ZnS and In2S3 ETLs heterostructures, respectively. The findings of this study contribute to in-depth understanding of the physical, electronic, and optical properties of Sr3SbI3 absorber perovskite and SnS2, ZnS, and In2S3 ETLs. Additionally, it provides valuable insights into the potential of Sr3SbI3 in heterostructure perovskite solar cells (PSCs), paving the pathway for further experimental design of an efficient and stable PSC devices.

Lead-free, formamidinium germanium-antimony halide (FA4GeSbCl12) double perovskite solar cells: the effects of band offsets

Double halide perovskites have received massive attention due to their low toxicity, tunable bandgap, structural flexibility, and stability as compared to conventional 3D lead halide perovskites. Particularly, newly discovered formamidinium germanium-antimony halide (FA4GeSbCl12) double perovskites offer an excellent bandgap (∼1.3 eV) for solar cell (SC) applications. Therefore, in this study, for the first time, we have simulated FTO/TiO2/FA4GeSbCl12/Cu2O/Au planar SCs using SCAPS-1D, showing a maximum power conversion efficiency of 22.5% with Jsc = 34.52 mA cm-2, Voc = 0.76 V, and FF = 85.1%. The results show that the variation in valence and conduction band offsets (-0.4 to +0.2 eV and -0.4 to +0.57 eV) at the ETL/absorber and absorber/HTL interfaces dominate the SC performance. Also, different absorber defect densities (1 × 1014-1 × 1020 cm-3) and thicknesses (200-3000 nm) effectively influence the PCE. Moreover, simulated impedance spectroscopy (IS) data (through SCAPS-1D) were fitted using equivalent electrical circuits to extract relevant parameters, including Rs, RHF, and RLF, allowing us to better discuss the physics of the device. The fitted IS results strongly revealed that enhanced SC performance is associated with higher recombination resistance and a larger recombination lifetime. Likewise, a slight variation in the Rs (0 to 2.5 Ω cm2) highly impacts the PCE (22.5% to 19.7%). Furthermore, a tandem cell is designed by combining the top cell of ethylenediammonium-FASnI3 perovskite with the FA4GeSbCl12 bottom cell using a filtered spectrum strategy, which opens the door for multi-junction SC applications. These findings firmly reveal that the appropriate energy level alignment at interfaces with suitable material properties is the key to boosting SC performance.

Achieving above 24% efficiency with non-toxic CsSnI3 perovskite solar cells by harnessing the potential of the absorber and charge transport layers

Lead toxicity is a barrier to the widespread commercial manufacture of lead halide perovskites and their use in solar photovoltaic (PV) devices. Eco-friendly lead-free perovskite solar cells (PSCs) have been developed using certain unique non- or low-toxic perovskite materials. In this context, Sn-based perovskites have been identified as promising substitutes for Pb-based perovskites due to their similar characteristics. However, Sn-based perovskites suffer from chemical instability, which affects their performance in PSCs. This study employs theoretical simulations to identify ways to improve the efficiency of Sn-based PSCs. The simulations were conducted using the SCAPS-1D software, and a lead-free, non-toxic, and inorganic perovskite absorber layer (PAL), i.e. CsSnI3 was used in the PSC design. The properties of the hole transport layer (HTL) and electron transport layer (ETL) were tuned to optimize the performance of the device. Apart from this, seven different combinations of HTLs were studied, and the best-performing combination was found to be ITO/PCBM/CsSnI3/CFTS/Se, which achieved a power conversion efficiency (PCE) of 24.73%, an open-circuit voltage (VOC) of 0.872 V, a short-circuit current density (JSC) of 33.99 mA cm-2 and a fill factor (FF) of 83.46%. The second highest PCE of 18.41% was achieved by the ITO/PCBM/CsSnI3/CuSCN/Se structure. In addition to optimizing the structure of the PSC, this study also analyzes the current density-voltage (J-V) along with quantum efficiency (QE), as well as the impact of series resistance, shunt resistance, and working temperature, on PV performance. The results demonstrate the potential of the optimized structure identified in this study to enhance the standard PCE of PSCs. Overall, this study provides important insights into the development of lead-free absorber materials and highlights the potential of using CsSnI3 as the PAL in PSCs. The optimized structure identified in this study can be used as a base for further research to improve the efficiency of Sn-based PSCs.