Boosting efficiency above 28% using effective charge transport layer with Sr3SbI3 based novel inorganic perovskite

A comprehensive investigation of the Sr3AsX3 (X = F/Cl/Br) inorganic cubic perovskites' strain-induced structural, electronic, optical, and mechanical properties with solar cell applications

In comparison to the lead halide perovskites, nowadays, lead-free halide perovskites have demonstrated a number of benefits, including efficient optical absorption, increased stability, variable bandgap, excellent mobility of carriers, non-toxicity, abundant raw ingredients, and low manufacturing cost. The use of the Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional inside the quantum espresso software allowed for a thorough examination of these materials, potentially leading to improvements in the development of ecologically acceptable and economically sustainable perovskite-based products. This work has extensively examined the effects of compressive and tensile strain on the structural, optical, and electronic characteristics of the inorganic cubic perovskite Sr3AsX3 (X = F, Cl, Br) with varying X anion using first-principles density-functional theory (FP-DFT). At the Γ point, the unstrained Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 compounds have a direct bandgap of 1.68/2.50 eV, 1.65/2.47 eV, and 1.522/2.30 eV, respectively, from the PBE/HSE methods. A drop in bandgap values occurs when the X-anion switches from F to Cl to Br. Furthermore, the bandgaps of the three proposed structures show a minor increase in response to tensile strain and a decreasing prevalence in response to compressive strain. The optical properties, which include dielectric functions, absorption coefficient, and electron loss function, are consistent with the band characteristics of these components, all of which point to a significant capability for absorption in the visible region. The dielectric constants of Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 are discovered to have peaks that, with compressive strain, redshift (move towards lower photon energy) and, under tensile strain, blueshift (move towards upper photon energy). In comparison to the compounds Sr3AsF3 and Sr3AsCl3, the parameters indicate that the material Sr3AsBr3 is more optically advantageous. The SCAPS-1D simulator was used to methodically examine the photovoltaic (PV) performance of novel cell topologies that included SnS2 as an electron transport layer (ETL) and Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 as absorbers and primarily 19.76, 19.89, and 20.89% PCE was achieved, respectively.

A comprehensive study on electron and hole transport layers for designing and optimizing the efficiency of MoSe2-Based solar cells using numerical simulation techniques

Researchers have recently shown a great deal of interest in molybdenum diselenide (MoSe2)-based solar cells due to their outstanding semiconducting characteristics. However, discrepancies in the band arrangement at the MoSe2/ETL (electron transport layer) and hole transport layer (HTL)/MoSe2 interfaces impede performances. In this research, a device combination with Ag/FTO/ETL/MoSe2/HTL/Ni is employed, where 7 HTLs and 3 different ETLs have been utilized to explore which device arrangement is superior. To achieve the most effective device arrangement, the effects of various device variables, such as thickness, donor density, acceptor density, defect density, temperature, series, and shunt resistance, are optimized. The computational evaluation under AM 1.5 light spectrums (100 mW/cm2) is performed using the SCAPS-1D simulator. When the several device parameters were optimized, the device that was correlated with Ag/FTO/SnS2/MoSe2/V2O5/Ni revealed the highest overall performances among the three different ETL (In2S3, SnS2, ZnSe)-based devices, with measuring a PCE of 34.07 %, a VOC of 0.918 V, a JSC of 42.565 mAcm-2, and an FF of 87.19 %. This recommended MoSe2-based solar cell exhibits outstanding efficiency in terms of maintenance and comparison to numerical thin film solar cells, highlighting MoSe2 as an attractive option for solar energy systems while eliminating toxicity challenges.

Numerical analysis and device modelling of a lead-free Sr3PI3/Sr3SbI3 double absorber solar cell for enhanced efficiency

Halide perovskites are the most promising options for extremely efficient solar absorbers in the field of photovoltaic (PV) technology because of their remarkable optical qualities, increased efficiency, lightweight design, and affordability. This work examines the analysis of a dual-absorber solar device that uses Sr3SbI3 as the bottom absorber layer and Sr3PI3 as the top absorber layer of an inorganic perovskite through the SCAPS-1D platform. The device architecture includes ZnSe as the electron transport layer (ETL), while the active layer consists of Sr3PI3 and Sr3SbI3 with precise bandgap values. The bandgap value of Sr3SbI3 is 1.307 eV and Sr3PI3 is 1.258 eV. By employing double-graded materials of Sr3PI3/Sr3SbI3, the study achieves an optimized efficiency of up to 34.13% with a V OC of 1.09 V, FF of 87.29%, and J SC of 35.61 mA cm-2. The simulation explores the influence of absorber layer thickness, doping level, and defect density on electrical properties like efficiency, short-circuit current, open-circuit voltage, and fill factor. It also examines variations in temperature and assesses series and shunt resistances in addition to electrical factors. The simulation's output offers valuable insights and suggestions for designing and developing double-absorber solar cells.

Solar power conversion: CuI hole transport layer and Ba3NCl3 absorber enable advanced solar cell technology boosting efficiency over 30

Researchers are becoming more interested in novel barium-nitride-chloride (Ba3NCl3) hybrid perovskite solar cells (HPSCs) due to their remarkable semiconductor properties. An electron transport layer (ETL) built from TiO2 and a hole transport layer (HTL) made of CuI have been studied in Ba3NCl3-based single junction photovoltaic cells in a variety of variations. Through extensive numerical analysis using SCAPS-1D simulation software, we investigated elements such as layer thickness, defect density, doping concentration, interface defect density, carrier concentration, generation, recombination, temperature, series and shunt resistance, open circuit voltage (V OC), short circuit current (J SC), fill factor (FF), and power conversion efficiency (PCE). The study found that the HTL CuI design reached the highest PCE at 30.47% with a V OC of 1.0649 V, a J SC of 38.2609 mA cm-2, and an FF of 74.78%. These findings offer useful data and a practical plan for producing inexpensive, Ba3NCl3-based thin-film solar cells.

Design and Optimization of High-Performance Novel RbPbBr3-Based Solar Cells with Wide-Band-Gap S-Chalcogenide Electron Transport Layers (ETLs)

Inorganic cubic rubidium-lead-halide perovskites have attracted considerable attention owing to their structural, electronic, and unique optical properties. In this study, novel rubidium-lead-bromide (RbPbBr3)-based hybrid perovskite solar cells (HPSCs) with several high-band-gap chalcogenide electron transport layers (ETLs) of In2S3, WS2, and SnS2 were studied by density functional theory (DFT) and using the SCAPS-1D simulator. Initially, the band gap and optical performance were computed using DFT, and these results were utilized for the first time in the SCAPS-1D simulator. Furthermore, the impact of different major influencing parameters, that is, the thickness of the layer, bulk defect density, doping concentration, and defect density of interfaces, including the working temperature, were also investigated and unveiled. Further, a study on an optimized device with the most potential ETL (SnS2) layer was performed systematically. Finally, a comparative study of different reported heterostructures was performed to explore the benchmark of the most recent efficient RbPbBr3-based photovoltaics. The highest power conversion efficiency (PCE) was 29.75% for the SnS2 ETL with Voc of 0.9789 V, Jsc of 34.57863 mA cm-2, and fill factor (FF) of 87.91%, while the PCEs of 21.15 and 24.57% were obtained for In2S3 and WS2 ETLs, respectively. The electron-hole generation, recombination rates, and quantum efficiency (QE) characteristics were also investigated in detail. Thus, the SnS2 ETL shows strong potential for use in RbPbBr3-based hybrid perovskite high-performance photovoltaic devices.

A novel investigation of pressure-induced semiconducting to metallic transition of lead free novel Ba3SbI3 perovskite with exceptional optoelectronic properties

The structural, electronic, mechanical, and optical characteristics of barium-based halide perovskite Ba3SbI3 under the influence of pressures ranging from 0 to 10 GPa have been analyzed using first-principles calculations for the first time. The new perovskite Ba3SbI3 material was shown to be a direct band gap semiconductor at 0 GPa, but the band gap diminished when the applied pressure increased from 0 to 10 GPa. So the Ba3SbI3 material undergoes a transition from semiconductor to metallic due to high pressure at 10 GPa. The Ba3SbI3 material also exhibits an increase in optical absorption and conductivity with applied pressure due to the change in band gap, which is more suitable for solar absorbers, surgical instruments, and optoelectronic devices. The charge density maps confirm the presence of both ionic and covalent bonding characteristics. Exploration into the mechanical characteristics indicates that the Ba3SbI3 perovskite is mechanically stable. Additionally, the Ba3SbI3 compound becomes strongly anisotropic at high pressure. The insightful results of our simulations will all be helpful for the experimental structure of a new effective Ba3SbI3-based inorganic perovskite solar cell in the near future.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.