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Sun C, Deng Z, Liu X, Zhang F, Lian K, Zhao Y, Zhang H, Han J, Luo M. Highly efficient and stable Cs 3Mn 0.93Zn 0.07Br 5@SiO 2 for wide color gamut backlight displays. Dalton Trans 2024; 53:2153-2158. [PMID: 38189118 DOI: 10.1039/d3dt03874b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO2-encapsulated Cs3MnBr5, denoted as Cs3Mn0.93Zn0.07Br5@SiO2 (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr4]2-. The PLQY can be further improved to 80% after coating SiO2. Compared with Cs3MnBr5 (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K2SiF6:Mn4+ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.
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Affiliation(s)
- Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Zhihui Deng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Xiaohui Liu
- Key Laboratory of Magnetism and Magnetic Materials Autonomous Region, Baotou Teachers' College, Inner Mongolia University of Science and Technology, 3 Kexue Road, Baotou, 014030, P.R. China
- Zhejiang Ruico Advanced Material Co., Ltd, No. 188 Liangshan Road, Huzhou, 313018, PR China
| | - Fuhao Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Kai Lian
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Yiwei Zhao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Hu Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Jiachen Han
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Mingming Luo
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
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Li DY, Kang HY, Liu YH, Zhang J, Yue CY, Yan D, Lei XW. A 0D hybrid lead-free halide with near-unity photoluminescence quantum yield toward multifunctional optoelectronic applications. Chem Sci 2024; 15:953-963. [PMID: 38239673 PMCID: PMC10793591 DOI: 10.1039/d3sc05245a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 12/04/2023] [Indexed: 01/22/2024] Open
Abstract
Zero-dimensional (0D) hybrid metal halides have emerged as highly efficient luminescent materials, but integrated multifunction in a structural platform remains a significant challenge. Herein, a new hybrid 0D indium halide of (Im-BDMPA)InCl6·H2O was designed as a highly efficient luminescent emitter and X-ray scintillator toward multiple optoelectronic applications. Specifically, it displays strong broadband yellow light emission with near-unity photoluminescence quantum yield (PLQY) through Sb3+ doping, acting as a down-conversion phosphor to fabricate high-performance white light emitting diodes (WLEDs). Benefiting from the high PLQY and negligible self-absorption characteristics, this halide exhibits extraordinary X-ray scintillation performance with a high light yield of 55 320 photons per MeV, which represents a new scintillator in 0D hybrid indium halides. Further combined merits of a low detection limit (0.0853 μGyair s-1), ultra-high spatial resolution of 17.25 lp per mm and negligible afterglow time (0.48 ms) demonstrate its excellent application prospects in X-ray imaging. In addition, this 0D halide also exhibits reversible luminescence off-on switching toward tribromomethane (TBM) but fails in any other organic solvents with an ultra-low detection limit of 0.1 ppm, acting as a perfect real-time fluorescent probe to detect TBM with ultrahigh sensitivity, selectivity and repeatability. Therefore, this work highlights the multiple optoelectronic applications of 0D hybrid lead-free halides in white LEDs, X-ray scintillation, fluorescence sensors, etc.
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Affiliation(s)
- Dong-Yang Li
- School of Chemistry, Chemical Engineer and Materials, Jining University Qufu Shandong 273155 P. R. China
- School of Chemistry and Chemical Engineering, Qufu Normal University Qufu Shandong 273165 P. R. China
| | - Huai-Yuan Kang
- School of Chemistry, Chemical Engineer and Materials, Jining University Qufu Shandong 273155 P. R. China
| | - Yu-Hang Liu
- School of Chemistry and Chemical Engineering, Qufu Normal University Qufu Shandong 273165 P. R. China
| | - Jie Zhang
- School of Chemistry and Chemical Engineering, Qufu Normal University Qufu Shandong 273165 P. R. China
| | - Cheng-Yang Yue
- School of Chemistry, Chemical Engineer and Materials, Jining University Qufu Shandong 273155 P. R. China
| | - Dongpeng Yan
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Key Laboratory of Radiopharmaceuticals, Ministry of Education, Beijing Normal University Beijing 100875 P. R. China
| | - Xiao-Wu Lei
- School of Chemistry, Chemical Engineer and Materials, Jining University Qufu Shandong 273155 P. R. China
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