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Barber DJ, Wenk HR, Hirth G, Kohlstedt DL. Chapter 95 Dislocations in Minerals. DISLOCATIONS IN SOLIDS 2010. [DOI: 10.1016/s1572-4859(09)01604-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Veth H, Teichler H. Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818408246525] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- H. Veth
- a Institut für Metallphysik der Universität Göttingen , Sonderforschungsbereich 126, D-3400 , Göttingen , F. R. Germany
| | - H. Teichler
- a Institut für Metallphysik der Universität Göttingen , Sonderforschungsbereich 126, D-3400 , Göttingen , F. R. Germany
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Petrenko VF, Whitworth RW. Charged dislocations and the plastic deformation of II-VI compounds. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418618008239342] [Citation(s) in RCA: 58] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Olsen A, Spence JCH. Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418618108239504] [Citation(s) in RCA: 91] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Gdeichmann R, Vaudin MD, Ast DG. Recovery of edge-defined film-fed grown silicon Dislocation/twin boundary interaction and mechanisms for twin-induced grain boundary formation. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418618508237566] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Pirouz P, Demenet JL, Hong MH. On transition temperatures in the plasticity and fracture of semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1080/01418610108214437] [Citation(s) in RCA: 75] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Denteneer PJH, Haeringen WV. Stacking-fault energies in semiconductors from first-principles calculations. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/20/32/001] [Citation(s) in RCA: 124] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Faress A, Levade C, Vanderschaeve G. TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism. ACTA ACUST UNITED AC 1993. [DOI: 10.1080/01418619308219359] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Cox G, Szynka D, Poppe U, Graf KH, Urban K, Kisielowski-Kemmerich C, Krüger J, Alexander H. Scanning tunneling microscopy of crystal dislocations in gallium arsenide. PHYSICAL REVIEW LETTERS 1990; 64:2402-2405. [PMID: 10041703 DOI: 10.1103/physrevlett.64.2402] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Androussi Y, Vanderschaeve G, Lefebvre A. Slip and twinning in high-stress-deformed GaAs and the influence of doping. ACTA ACUST UNITED AC 1989. [DOI: 10.1080/01418618908221170] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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