Optical properties of point defects in SiO2 from time-dependent density functional theory

Difference in Structure and Electronic Properties of Oxygen Vacancies in α-Quartz and α-Cristobalite Phases of SiO2

α-cristobalite (α-C) is a polymorph of silica, mainly found in space exploration and geochemistry research. Due to similar densities, α-C is often used as a proxy for amorphous SiO2, particularly in computer simulations of SiO2 surfaces and interfaces. However, little is known about the properties of α-C and its basic oxygen defects. Using density functional theory (DFT) simulations we provide a comprehensive report on the properties of perfect structure and oxygen vacancies in α-C. The calculated properties of α-C are compared with those of the better-characterized α-quartz (α-Q). Our results demonstrated that the positively charged O vacancy in α-C is most stable in the dimer configuration, in contrast to α-Q, which favors the puckered configuration. A back-projected configuration was also predicted in both polymorphs. We calculated the optical transition energies and isotropic hyperfine constants for O vacancies in both α-Q and α-C, and compared our findings with the results of previous studies and experiments. This work, thus, offers one of the first in-depth investigations of the properties of oxygen vacancies in α-C.

Analytical Study of Porous Organosilicate Glass Films Prepared from Mixtures of 1,3,5- and 1,3-Alkoxysilylbenzenes

Organosilicate glass (OSG)-based porous low dielectric constant (low-k) films with different molar ratios of 1,3,5-tris(triethoxysilyl)benzene to 1,3-bis(triethoxysilyl)benzene bridging organic groups (1:3 and 1:7) were spin-on deposited, followed by a soft bake in air and N₂ at 150 °C and hard bake in air and N₂ at 400 °C. Non-ionic template (Brij^®30) concentrations were varied from 0 to 41 wt% to control the porosity of the films. The chemical composition of the matrix of the films was evaluated and discussed with the shrinkage of the film during the curing, refractive indices, mechanical properties, k-values, porosity and pore structure. The chemical composition of the film cured in both air and N₂-containing ambient were evaluated and compared. The benzene bridging groups containing films change their porosity (0 to 43%) but keep the pore size constant and equal to 0.81 nm when porosity is lower than 30%. The k-value decreases with increasing porosity, as expected. The films containing benzene bridge have higher a Young’s modulus than plasma-enhanced chemical vapor deposition (PECVD) methyl-terminated low-k films with the same porosity and show good hydrophobic properties after a hard bake and close to the values reported for 1,4-benzene-bridged films. The fabricated films show good stability after a long time of storage. However, the improvement of mechanical properties was lower than the values predicted by the published literature data. It was concluded that the concentration of 1,3,5-benzene bridges was below the stiffness threshold required for significant improvement of the mechanical properties. The films show UV-induced luminescence with a photon energy of 3.6 to 4.3 eV. The luminescence is related to the presence of oxygen-deficient-type defects or their combination with organic residues. The most intensive luminescence is observed in as-deposited and soft bake samples, then the intensity is reduced after a hard bake. It is assumed that the oxygen-deficient centers form because of the presence of Si–OC₂H₅ groups in the films and the concentration of these centers reduces when all these groups completely transformed into siloxane (Si–O–Si).

Electrical tree inhibition by SiO2/XLPE nanocomposites: insights from first-principles calculations

It has been extensively observed in experiments that nanoparticle additives can efficiently inhibit the electrical tree growth of the cross-linked polyethylene (XLPE) matrix of power cables. Inspired by this, the first-principles calculations employing the density functional theory (DFT) method were performed in this study to investigate the significant role of SiO₂ nanosized fillers as a voltage stabilizer for power cable insulation. Several different types of α-SiO₂ fillers, including hydroxylated, reconstructed, doped or oxygen vacancy surface structures, were constructed to model the interfacial interaction for SiO₂/XLPE nanocomposites. It is found that the SiO₂ additives can restrict the movement of the polyethylene chain through van der Waals physical interaction. More importantly, based on the Bader charge analysis we reveal that SiO₂ could effectively capture hot electrons to suppress space charge accumulation in XLPE. However, some particular modified-surface SiO₂, such as incompletely hydroxylated, B-doped, and oxygen vacancy defect on the top layer, could induce the H migration reaction and consequent electrical tree growth of the XLPE chain. In contrast, the SiO₂ particles that have N-doped or oxygen vacancy on the lower layer with completely hydroxylated surfaces, as well as the reconstructed surface, are predicted to be favorable additives because of their quite strong physical interaction and very weak chemical activity with XLPE. The present study is useful to understand the mechanism of the nanosized voltage stabilizer and also provide important information for further experimental investigation.

Structure and properties of electronic and hole centers in CsBr from theoretical calculations

The electronic structure, geometry, diffusion barriers and optical properties of fundamental defects of CsBr are calculated using hybrid functional DFT and TD-DFT methods. The B3LYP functional with a modified exchange contribution has been used in an embedded cluster scheme to model the structure and spectroscopic properties of the self-trapped triplet exciton, interstitial Br atoms and ions, self-trapped holes and Br vacancies. The calculated migration barriers and positions of maxima of optical absorption bands are in good agreement with experiment, justifying the obtained defect geometries. The off-center triplet exciton luminescence energy is also accurately calculated.

Visible-ultraviolet vibronic emission of silica nanoparticles

We report the study of the visible-ultraviolet emission properties and the structural features of silica nanoparticles prepared through a laboratory sol–gel technique.

Optical Properties of Oxygen Vacancies in Germanium Oxides: Quantum Chemical Modeling of Photoexcitation and Photoluminescence

Photoabsorption and photoluminescence properties of single and double oxygen vacancy (OV and DOV) defects in quartz-like germanium oxide have been investigated by high-level ab initio calculations. It has been found that photoabsorption for these systems occurs at lower energies as compared to the analogous defects in SiO(2). For OV, the lowest electronic excitations with high oscillator strengths have energies of 6.7-7.0 eV, whereas for DOV, the lowest-energy photoabsorption band is calculated to be in the range of 5.5-5.9 eV. Significant geometry relaxation and large Stokes shift are inherent for these excited states and, as a result, their photoluminescence bands are predicted to peak at 3.1-3.3 eV for OV and at 2.6 eV for DOV. The double oxygen vacancy is suggested to be the most suitable candidate for generating bright blue photoluminescence observed experimentally for substoichiometric quartz-like GeO(2) nanowires, as the calculated optical properties of DOV are in close agreement with the features found in experiment.

A density functional theory study of atomic oxygen and nitrogen adsorption over α-alumina (0001)

The interaction of atomic oxygen and nitrogen on the (0001) surface of corundum (alpha-alumina) is investigated from first-principles by means of periodic density functional calculations within the generalized gradient approximation. A large Al(2)O(3) slab model (18 layers relaxing 10) ended with the most stable aluminium layer is used throughout the study. Geometries, adsorption energies and vibrational frequencies are calculated for several stationary points for two spin states at different sites over an 1 x 1 unit cell. Two stable adsorption minima over Al or in a bridge between Al and O surface atoms are found for oxygen and nitrogen, without activation energies. The oxygen adsorption (e.g., E(ad) = 2.30 eV) seems to be much more important than for nitrogen (e.g., E(ad) = 1.23 eV). Transition states for oxygen surface diffusion are characterized and present not very high-energy barriers. The computed geometries and adsorption energies are consistent with similar adsorption theoretical studies and related experimental data for O, N or alpha-alumina. The present results along with our previous results for beta-cristobalite do not support the assumption of an equal E(ad) for O and N over similar oxides, which is commonly used in some kinetic models to derive catalytic atomic recombination coefficients for atomic oxygen and nitrogen. The magnitude of O and N adsorption energies imply that Eley-Rideal and Langmuir-Hinshelwood reactions with these species will be exothermic, contrary to what happens for beta-cristobalite.

Photoluminescence of oxygen-deficient defects in germanium oxides: A quantum chemical study

The photoabsorption and photoluminescence (PL) properties of the surface E(') center, -GeX(3), and the combined E(')-center-oxygen vacancy, X(3)Ge-GeX(2), defects in substoichiometric germanium oxides have been investigated by high-level ab initio calculations, including complete active space self-consistent field, multireference configuration interaction, and symmetry-adapted cluster configuration interaction methods. Both defects have been shown to give rise to photoabsorption bands between 4 and 6 eV. Geometry relaxation is significant and the Stokes shifts are large for all calculated excited states. A removal of an electron from the Ge-Ge bond leads to its destruction, whereas the creation of an electron hole at lone pairs of O atoms results in elongations of the Ge-O-Ge bonds in the corresponding bridges. Most often, deexcitations of excited electronic states proceed radiationlessly, through crossing points of their potential energy surfaces with those of the lower states. The -GeX(3) defect is able to generate several PL bands in the UV ( approximately 3 eV) and IR (1.2-1.4 and 0.5-0.6 eV) spectral ranges, whereas the X(3)Ge-GeX(2) defect gives only one red/orange PL band at 2.0-2.1 eV. No intense PL band was found in the blue spectral region of 2.5-2.7 eV, and the two defects are not likely to contribute to the intense blue photoluminescence observed for GeO(2) nanowires.

Gold Atoms and Dimers on Amorphous SiO2: Calculation of Optical Properties and Cavity Ringdown Spectroscopy Measurements

We report on the optical absorption spectra of gold atoms and dimers deposited on amorphous silica in size-selected fashion. Experimental spectra were obtained by cavity ringdown spectroscopy. Issues on soft-landing, fragmentation, and thermal diffusion are discussed on the basis of the experimental results. In parallel, cluster and periodic supercell density functional theory (DFT) calculations were performed to model atoms and dimers trapped on various defect sites of amorphous silica. Optically allowed electronic transitions were calculated, and comparisons with the experimental spectra show that silicon dangling bonds [[triple bond]Si(.-)], nonbridging oxygen [[triple bond]Si-O(.-)], and the silanolate group [[triple bond]Si-O(-)] act as trapping centers for the gold particles. The results are not only important for understanding the chemical bonding of atoms and clusters on oxide surfaces, but they will also be of fundamental interest for photochemical studies of size-selected clusters on surfaces.

Photoluminescence of oxygen-containing surface defects in germanium oxides: A theoretical study

Photoabsorption and photoluminescence properties of nonbridging oxygen -O-Ge[triple bond](NBO), -OO-Ge[triple bond] (peroxy radical), O=Ge=, and (O2)Ge= defects in germanium oxides have been investigated by high-level ab initio calculations. Geometry optimization for excited electronic states of model clusters simulating these defects was carried out at the complete-active-space self-consistent-field level, and relative energies were calculated by various methods including time-dependent density-functional theory, outer-valence Green's functions, equation-of-motion coupled cluster theory with single and double excitations, symmetry-adapted cluster configuration interaction, multireference second-order perturbation theory, and multireference configuration interaction. The results demonstrate that the considered excited states of the aforementioned defects normally exhibit large Stokes shifts and that, with few exceptions, UV photoabsorption is accompanied by red or IR photoluminescence.

Optical properties of Cu nanoclusters supported on MgO(100)

The vertical transitions of Cu atoms, dimers, and tetramers deposited on the MgO surface have been investigated by means of ab initio calculations based either on complete active space second-order perturbation theory or on time-dependent density functional theory. Three adsorption sites have been considered as representative of the complexity of the MgO surface: regular sites at flat (100) terraces, extended defects such as monoatomic steps, and point defects such as neutral oxygen vacancies (F or color centers). The optical properties of the supported Cu clusters have been compared with those of the corresponding gas-phase units. Upon deposition a substantial modification of the energy levels of the supported cluster is induced by the Pauli repulsion with the substrate. This causes shifts in the optical transitions going from free to supported clusters. The changes in cluster geometry induced by the substrate have a much smaller effect on the optical absorption bands. On F centers the presence of filled impurity levels in the band gap of MgO results in a strong mixing with the empty levels of the Cu atoms and clusters with consequent deep changes in the optical properties of the color centers. The results allow to interpret electron energy loss spectra of Cu atoms deposited on MgO thin films.

Electronic Structure of 1 to 2 nm Diameter Silicon Core/Shell Nanocrystals: Surface Chemistry, Optical Spectra, Charge Transfer, and Doping

Static and time-dependent density functional calculations, geometrically optimized and including all electrons, are described for silicon nanocrystals as large as Si(87)H(76), which contains 163 atoms. We explore and predict the effect that different sp(3) passivation schemes-F or H termination, thin oxide shell, or alkane termination-have on the HOMO and LUMO, on the optical spectra, and on electron transfer properties. Electronegativity comparisons are a useful guide in understanding the observed deviation from the simple quantum size effect model. Nanocrystals containing Al or P impurity atoms, either on the surface or in the interior, are explored to understand electrical doping in strongly quantum-confined nanocrystals. Surface dangling bonds are found to participate in internal charge transfer with P atom dopant electrons.

Electronic structure of oxygen dangling bond in glassy SiO2: the role of hyperconjugation

The electronic structure and the nature of optical transitions in oxygen dangling bond in silica glass, the nonbridging oxygen hole center (NBOHC), were calculated. The calculation reproduced well the peak positions and oscillator strengths of the well-known optical absorption bands at 2.0 and 4.8 eV, and of the recently discovered absorption band at 6.8 eV. The 2.0 eV band was attributed to transition from the sigma bond between Si and dangling oxygen to nonbonding pi orbital on the dangling oxygen. The uniquely small electron-phonon coupling associated with the 2.0 eV transition is explained by stabilization of Si-O bond in the excited state by hyperconjugation effects.

Performance of time-dependent density functional and Green functions methods for calculations of excitation energies in radicals and for Rydberg electronic states

Time-dependent density functional (TD-DFT) and perturbation theory-based outer valence Green functions (OVGF) methods have been tested for calculations of excitation energies for a set of radicals, molecules, and model clusters simulating points defects in silica. The results show that the TD-DFT approach may give unreliable results not only for diffuse Rydberg states, but also for electronic states involving transitions between MOs localized in two remote from each other spatial regions, for example, for charge-transfer excitations. For the. O-SiX(3) clusters, where X is a single-valence group, TD-DFT predicts reasonable excitation energies but incorrect sequence of electronic transitions. For a number of cases where TD-DFT is shown to be unreliable, the OVGF approach can provide better estimates of excitation energies, but this method also is not expected to perform universally well. The OVGF performance is demonstrated to be satisfactory for excitations with predominantly single-determinant wave functions where the deviations of the calculated energies from experiment should not exceed 0.1-0.3 eV. However, for more complicated transitions involving multiple bonds or for excited states with multireference wave functions the OVGF approach is less reliable and error in the computed energies can reach 0.5-1 eV.

Paramagnetic defect centers at the MgO surface. An alternative model to oxygen vacancies

On the basis of embedded cluster calculations, we propose a new model for the structure of paramagnetic color centers at the MgO surface usually denoted as F(S)(H)(+) (an electron trapped near an adsorbed proton). These centers are produced by exposing the surface of polycrystalline MgO to H(2) followed by UV irradiation. We demonstrate that properties of H atom absorbed at surface sites such as step edges (MgO(step)) and reverse corner sites (MgO(RC)), formed at the intersection of two step edges, are compatible with a number of features observed for F(S)(H)(+). Our calculations suggest that (i) H(2) dissociates at the reverse corner site heterolytically and that there is no barrier for this exothermic reaction; (ii) the calculated vibrations of the resulting MgO(RC)(H(+))(H(-)) complex are fully consistent with the measured ones; (iii) desorption of a neutral H atom from the diamagnetic precursor requires UV light and leads to the formation of stable neutral paramagnetic centers at the surface, MgO(step)(H(+))(e(-))(trapped) and MgO(RC)(H(+))(e(-))(trapped). The computed isotropic hyperfine coupling constants and optical transitions of these centers are in broad agreement with the existing experimental data. We argue that these centers, which do not belong to the class of "oxygen vacancies", are two of the many possible forms of the F(S)(H)(+) defect center.