An ab initio investigation on the vertical electron detachment energies of semiconductor-alkali binary anions EnA− (A=K, Na, Li; E=Ge, Si; n=1–10)

Electron Propagator Theory of Vertical Electron Detachment Energies of Anions: Benchmarks and Applications to Nucleotides

A new generation of ab initio electron-propagator self-energy approximations that are free of adjustable parameters is tested on a benchmark set of 55 vertical electron detachment energies of closed-shell anions. Comparisons with older self-energy approximations indicate that several new methods that make the diagonal self-energy approximation in the canonical Hartree-Fock orbital basis provide superior accuracy and computational efficiency. These methods and their acronyms, mean absolute errors (in eV), and arithmetic bottlenecks expressed in terms of occupied (O) and virtual (V) orbitals are the opposite-spin, non-Dyson, diagonal second-order method (os-nD-D2, 0.2, OV²), the approximately renormalized quasiparticle third-order method (Q3+, 0.15, O²V³) and the approximately renormalized, non-Dyson, linear, third-order method (nD-L3+, 0.1, OV⁴). The Brueckner doubles with triple field operators (BD-T1) nondiagonal electron-propagator method provides such close agreement with coupled-cluster single, double, and perturbative triple replacement total energy differences that it may be used as an alternative means of obtaining standard data. The new methods with diagonal self-energy matrices are the foundation of a composite procedure for estimating basis-set effects. This model produces accurate predictions and clear interpretations based on Dyson orbitals for the photoelectron spectra of the nucleotides found in DNA.

On the structure and chemical bonding of Si62− and Si62− in NaSi6− upon Na+ coordination

Photoelectron spectroscopy was combined with ab initio calculations to elucidate the structure and bonding in Si6 2- and NaSi6 -. Well-resolved electronic transitions were observed in the photoelectron spectra of Si6 - and NaSi6 - at three photon energies (355, 266, and 193 nm). The spectra of NaSi6 - were observed to be similar to those of Si6 - except that the electron binding energies of the former are lower, suggesting that the Si6 motif in NaSi6 - is structurally and electronically similar to that in Si6 -. The electron affinities of Si6 and NaSi6 were measured fairly accurately to be 2.23+/-0.03 eV and 1.80+/-0.05 eV, respectively. Global minimum structure searches for Si6 2- and NaSi6 - were performed using gradient embedded genetic algorithm followed by B3LYP, MP2, and CCSDT calculations. Vertical electron detachment energies were calculated for the lowest Si6 - and NaSi6 - structures at the CCSD(T)/6-311+G(2df), ROVGF/6-311+G(2df), UOVGF/6-311+G(2d), and time-dependent B3LYP/6-311+G(2df) levels of theory. Experimental vertical detachment energies were used to verify the global minimum structure for NaSi6 -. Though the octahedral Si6 2-, analogous to the closo form of borane B6H6 2-, is the most stable form for the bare hexasilicon dianion, it is not the kernel for the NaSi6 - global minimum. The most stable isomer of NaSi6 - is based on a Si6 2- motif, which is distorted into C2v symmetry similar to the ground state structure of Si6 -. The octahedral Si6 2- coordinated by a Na+ is a low-lying isomer and was also observed experimentally. The chemical bonding in Si6 2- and NaSi6 - was understood using natural bond orbital, molecular orbital, and electron localization function analyses.

Chemical Bonding in Si52- and NaSi5- via Photoelectron Spectroscopy and ab Initio Calculations

Photoelectron spectroscopy and ab initio calculations are used to investigate the electronic structure and chemical bonding of Si5(-) and Si5(2-) in NaSi5(-). Photoelectron spectra of Si5(-) and NaSi5(-) are obtained at several photon energies and are compared with theoretical calculations at four different levels of theory, TD-B3LYP, R(U)OVGF, UCCSD(T), and EOM-CCSD(T), all with 6-311+G(2df) basis sets. Excellent agreement is observed between experiment and theory, confirming the obtained ground-state structures for Si5(-) and Si5(2-), which are both found to be trigonal bipyramid with D3h symmetry at several levels of theory. Chemical bonding in Si5, Si5(-), and Si5(2-) is analyzed using NPA, molecular orbitals, ELF, and NICS indices. The bonding in Si5(2-) is compared with that in the isoelectronic and isostructural B5H5(2-) species, but they are found to differ due to the involvement of electron densities, which are supposed to be lone pairs in the skeletal bonding in Si5(2-).