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Hahn R, Battard T, Boucher O, Picard YJ, Lignier H, Comparat D, Keriel NA, Lopez C, Oswald E, Reveillard M, Viteau M. Comparative analysis of recirculating and collimating cesium ovens. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:043302. [PMID: 35489895 DOI: 10.1063/5.0085838] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 02/24/2022] [Indexed: 06/14/2023]
Abstract
We have performed a study of several cesium oven designs. A comparison between recirculating (or sticking-wall) and collimating (or re-emitting-wall) ovens is made in order to extract the most efficient design in terms of beam brightness. Unfortunately, non-reproducible behaviors have been observed, and the most often observed output flux is similar to the sticking-wall case, which is the lowest theoretical value of the two cases, with a beam brightness close to 1018 at. sr-1 s-1 cm-2. The reason of this universally observed behavior is unclear despite having tested several materials for the collimating tube. Conclusion on possible improved design based on sticking of cesium on several (un)cleaned surfaces is given.
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Affiliation(s)
- Raphaël Hahn
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | - Thomas Battard
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | - Oscar Boucher
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | - Yan J Picard
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | - Hans Lignier
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | - Daniel Comparat
- Université Paris-Saclay, CNRS, Laboratoire Aimé Cotton, 91405 Orsay, France
| | | | - Colin Lopez
- Université Paris-Saclay, ENS Paris-Saclay, CNRS, LuMIn, 91190 Gif-sur-Yvette, France
| | | | - Morgan Reveillard
- Orsay Physics, ZAC ST Charles, 3ème Avenue, No. 95, 13710 Fuveau, France
| | - Matthieu Viteau
- Orsay Physics, ZAC ST Charles, 3ème Avenue, No. 95, 13710 Fuveau, France
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Vlachos D. A quantitative analysis of AES and XPS specifically applied in adsorption systems at submonolayer regime. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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Ao L, Xiao HY, Xiang X, Li S, Liu KZ, Huang H, Zu XT. Functionalization of a GaSe monolayer by vacancy and chemical element doping. Phys Chem Chem Phys 2015; 17:10737-48. [DOI: 10.1039/c5cp00397k] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic and magnetic properties of the GaSe monolayer can be modified and manipulated through vacancy and chemical element doping.
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Affiliation(s)
- L. Ao
- School of Physical Electronics
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - H. Y. Xiao
- School of Physical Electronics
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - X. Xiang
- School of Physical Electronics
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - S. Li
- School of Material Science and Engineering
- University of New South Wales
- Sydney 2052
- Australia
| | - K. Z. Liu
- Science and Technology on Surface Physics and Chemistry Laboratory
- Mianyang 621900
- China
| | - H. Huang
- Science and Technology on Surface Physics and Chemistry Laboratory
- Mianyang 621900
- China
| | - X. T. Zu
- School of Physical Electronics
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
- Institute of Fundamental and Frontier Sciences
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Peng B, Cheng F, Tao Z, Chen J. Lithium transport at silicon thin film: Barrier for high-rate capability anode. J Chem Phys 2010; 133:034701. [DOI: 10.1063/1.3462998] [Citation(s) in RCA: 84] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Chen Q, Wang J, Zhu L, Wang S, Ding F. Fluorination induced half metallicity in two-dimensional few zinc oxide layers. J Chem Phys 2010; 132:204703. [DOI: 10.1063/1.3442908] [Citation(s) in RCA: 30] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Philipp P, Audinot JN, Wirtz T, Migeon HN. Neutral cesium deposition prior to SIMS analysis of inorganic and organic samples. SURF INTERFACE ANAL 2010. [DOI: 10.1002/sia.3336] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Thien D, Kury P, Horn-von Hoegen M, Meyer Zu Heringdorf FJ, van Heys J, Lindenblatt M, Pehlke E. Domain sensitive contrast in photoelectron emission microscopy. PHYSICAL REVIEW LETTERS 2007; 99:196102. [PMID: 18233086 DOI: 10.1103/physrevlett.99.196102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2007] [Indexed: 05/25/2023]
Abstract
We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2 x 1) or (1 x 2) reconstructed terraces. Density-functional calculations reveal the geometric and electronic structure of the Cs/Si(100) surface. The contrast between the (2 x 1) or (1 x 2) reconstructed domains is explained on the basis of dipole selection rules for the photoemission matrix elements.
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Affiliation(s)
- D Thien
- Fachbereich Physik und CeNiDE, Universität Duisburg-Essen, Campus Duisburg, 47057, Duisburg, Germany.
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Xiao H, Zu X, Zhang Y, Gao F. Atomic and electronic structures of rubidium adsorption on Si(001)(2×1) surface: Comparison with Cs/Si(001) surface. Chem Phys 2006. [DOI: 10.1016/j.chemphys.2005.10.003] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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