Photoluminescence of oxygen-containing surface defects in germanium oxides: A theoretical study

Structures and Properties of Planar Ge3O3 Cluster and Its Buckled Honeycomb Two-Dimensional Nanostructure

The discovery of graphene and its excellent properties inspired the search for more two-dimensional (2D) materials. Understanding the structures and properties of the smallest repeating units as well as crystal 2D materials is helpful for designing 2D materials. As germanium tends to form three-dimensional structures, the preparation of germanium-based 2D nanomaterials is still a challenge. Herein, we report a Ge3O3 cluster with the potential to construct a germanium oxide 2D nanostructure. We conduct a combined anion photoelectron spectroscopy and theoretical study on Ge3O3-/0. The structure of Ge3O3- is a Cs symmetric nonplanar six-membered ring, while that of Ge3O3 is a D3h symmetric planar six-membered ring. Chemical bonding analyses reveal that Ge3O3 exhibits π aromaticity. First-principle results suggest that a buckled honeycomb 2D nanostructure with a wide band gap of 3.14 eV may be produced based on Ge3O3, which is promising in optoelectronic applications especially in blue, violet, and ultraviolet regions.

O2 Loaded Germanosilicate Optical Fibers: Experimental In Situ Investigation and Ab Initio Simulation Study of GLPC Evolution under Irradiation

In this work we present a combined experimental and ab initio simulation investigation concerning the Germanium Lone Pair Center (GLPC), its interaction with molecular oxygen (O2), and evolution under irradiation. First, O2 loading has been applied here to Ge-doped optical fibers to reduce the concentration of GLPC point defects. Next, by means of cathodoluminescence in situ experiments, we found evidence that the 10 keV electron irradiation of the treated optical fibers induces the generation of GLPC centers, while in nonloaded optical fibers, the irradiation causes the bleaching of the pre-existing GLPC. Ab initio calculations were performed to investigate the reaction of the GLPC with molecular oxygen. Such investigations suggested the stability of the dioxagermirane (DIOG) bulk defect, and its back conversion into GLPC with a local release of O2 under irradiation. Furthermore, it is also inferred that a remarkable portion of the O2 passivated GLPC may form Ge tetrahedra connected to peroxy bridges. Such structures may have a larger resistance to the irradiation and not be back converted into GLPC.

Optical Properties of Oxygen Vacancies in Germanium Oxides: Quantum Chemical Modeling of Photoexcitation and Photoluminescence

Photoabsorption and photoluminescence properties of single and double oxygen vacancy (OV and DOV) defects in quartz-like germanium oxide have been investigated by high-level ab initio calculations. It has been found that photoabsorption for these systems occurs at lower energies as compared to the analogous defects in SiO(2). For OV, the lowest electronic excitations with high oscillator strengths have energies of 6.7-7.0 eV, whereas for DOV, the lowest-energy photoabsorption band is calculated to be in the range of 5.5-5.9 eV. Significant geometry relaxation and large Stokes shift are inherent for these excited states and, as a result, their photoluminescence bands are predicted to peak at 3.1-3.3 eV for OV and at 2.6 eV for DOV. The double oxygen vacancy is suggested to be the most suitable candidate for generating bright blue photoluminescence observed experimentally for substoichiometric quartz-like GeO(2) nanowires, as the calculated optical properties of DOV are in close agreement with the features found in experiment.

Photoluminescence of oxygen-deficient defects in germanium oxides: A quantum chemical study

The photoabsorption and photoluminescence (PL) properties of the surface E(') center, -GeX(3), and the combined E(')-center-oxygen vacancy, X(3)Ge-GeX(2), defects in substoichiometric germanium oxides have been investigated by high-level ab initio calculations, including complete active space self-consistent field, multireference configuration interaction, and symmetry-adapted cluster configuration interaction methods. Both defects have been shown to give rise to photoabsorption bands between 4 and 6 eV. Geometry relaxation is significant and the Stokes shifts are large for all calculated excited states. A removal of an electron from the Ge-Ge bond leads to its destruction, whereas the creation of an electron hole at lone pairs of O atoms results in elongations of the Ge-O-Ge bonds in the corresponding bridges. Most often, deexcitations of excited electronic states proceed radiationlessly, through crossing points of their potential energy surfaces with those of the lower states. The -GeX(3) defect is able to generate several PL bands in the UV ( approximately 3 eV) and IR (1.2-1.4 and 0.5-0.6 eV) spectral ranges, whereas the X(3)Ge-GeX(2) defect gives only one red/orange PL band at 2.0-2.1 eV. No intense PL band was found in the blue spectral region of 2.5-2.7 eV, and the two defects are not likely to contribute to the intense blue photoluminescence observed for GeO(2) nanowires.